Powerex CM200DY-24A Data Sheet
CM200DY-24A
A
EE
FF
B
N
L
(2 PLACES)
D
M NUTS
(3 PLACES)
J
G
G
H
KKK
PPP
T THICK
U WIDTH
QQ
V
C
S
R
G2
E2
E1
G1
C1E2C2E1
LABEL
C2E1 E2 C1
G2
E2
E1
G1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Dual IGBTMOD™
A-Series Module
200 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low V
CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.70 94.0
B 1.89 48.0
C 1.14+0.004/-0.02 29.0+0.1/-0.5
D 3.15±0.01 80.0±0.25
E 0.67 17.0
F 0.91 23.0
G 0.16 4.0
H 0.71 18.0
J 0.51 13.0
K 0.47 12.0
Dimensions Inches Millimeters
L 0.26 Dia. Dia. 6.5
M M5 Metric M5
N 0.79 20.0
P 0.63 16.0
Q 0.28 7.0
R 0.83 21.2
S 0.30 7.5
T 0.02 0.5
U 0.110 2.8
V 0.16 4.0
Applications:
£ AC Motor Control
£ UPS
£ Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you
desire from the table below -i.e.
CM200DY-24A is a 1200V (V
CES
200 Ampere Dual IGBTMOD™
Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 200 24
V
CES
),
1Rev. 08/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DY-24A
Dual IGBTMOD™ A-Series Module
200 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Ratings Symbol CM200DY-24A Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current (DC, TC = 86°C*) IC 200 Amperes
Peak Collector Current ICM 400** Amperes
Emitter Current*** (TC = 25°C) IE 200 Amperes
Peak Emitter Current*** IEM 400** Amperes
Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C) PC 1340 Watts
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
–40 to 125 °C
stg
1200 Volts
CES
±20 Volts
GES
2500 Volts
ISO
Static Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
I
Total Gate Charge QG VCC = 600V, IC = 200A, VGE = 15V — 1000 — nC
Emitter-Collector Voltage** VEC I
V
GES
GE
= V
V
CES
, VCE = 0V — — 0.5 µA
GES
I
GE(th)
IC = 200A, VGE = 15V, Tj = 25°C — 2.1 3.0 Volts
CE(sat)
C
= V
CE
= 20mA, VCE = 10V 6.0 7.0 8.0 Volts
C
= 200A, VGE = 15V, Tj = 125°C — 2.4 — Volts
= 200A, VGE = 0V — — 3.8 Volts
E
, VGE = 0V — — 1.0 mA
CES
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time tr V
Switch Turn-off Delay Time t
Time Fall Time tf Inductive Load — — 350 ns
Diode Reverse Recovery Time*** trr Switching Operation, — — 150 ns
Diode Reverse Recovery Charge*** Qrr I
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
— — 35 nf
ies
V
oes
— — 0.68 nf
res
— — 130 ns
d(on)
V
d(off)
GE1
= 10V, VGE = 0V — — 3 nf
CE
= 600V, IC = 200A, — — 100 ns
CC
= V
= 15V, RG = 1.6Ω, — — 450 ns
GE2
= 200A — 9.0 — µC
E
rating.
j(max)
2 Rev. 08/09
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