Powerex CM200DY-12NF Data Sheet
CM200DY-12NF
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TC MEASURED POINT
(BASEPLATE)
A
FF
EE
B
N
C2E1 E2 C1
L
(2 PLACES)
PPP
C
V
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.70 94.0
B 1.89 48.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.67 17.0
F 0.91 23.0
G 0.16 4.0
H 0.71 18.0
J 0.51 13.0
K 0.47 12.0
G2
E2
E1
G1
KKK
D
QQ
LABEL
G2
E2
C1E2C2E1
E1
G1
Dimensions Inches Millimeters
L 0.26 Dia. Dia. 6.5
M M5 Metric M5
N 0.79 20.0
P 0.63 16.0
Q 0.28 7.0
R 0.83 21.2
S 0.30 7.5
T 0.02 0.5
U 0.110 2.8
V 0.16 4.0
J
M NUTS
(3 PLACES)
T THICK
U WIDTH
S
R
G
H
G
Dual IGBTMOD™
NF-Series Module
200 Amperes/ 600 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM200DY-12NF is a 600V (V
200 Ampere Dual IGBTMOD™
Power Module.
Type Current Rating V
CM 200 12
CE(sat)
Free-Wheel Diode
Heat Sinking
CES
CES
Amperes Volts (x 50)
),
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DY-12NF
Dual IGBTMOD™ NF-Series Module
200 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200DY-12NF Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current*** (DC, TC' = 93°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
C
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
jMAX
rating.
ISO
–40 to 150 °C
–40 to 125 °C
600 Volts
±20 Volts
200 Amperes
400* Amperes
200 Amperes
400* Amperes
650 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V — — 1.0 mA
CES
, VCE = 0V — — 0.5 µA
GES
IC = 20mA, VCE = 10V 5.0 6.0 7.5 Volts
IC = 200A, VGE = 15V, Tj = 25°C—1.7 2.2 Volts
IC = 200A, VGE = 15V, Tj = 125°C—1.7 — Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
G
EC
VCC = 300V, IC = 200A, VGE = 15V — 800 — nC
IE = 200A, VGE = 0V — — 2.6 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Time Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)
***Tc' measured point is just under chips. If this value is used, Rth(f-a) should be measured just under chips
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V — — 3.7 nf
VCC = 300V, IC = 200A, — — 120 ns
V
= V
GE1
= 15V, RG = 3.1Ω,——300 ns
GE2
Inductive Load — — 300 ns
Switching Operation, — — 150 ns
IE = 200A — 3.5 — µC
j(max)
rating.
—— 30nf
—— 1.2 nf
——120 ns
2
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