Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM200DY-12NF is a 600V (V
200 Ampere Dual IGBTMOD™
Power Module.
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
RatingsSymbolCM200DY-12NFUnits
Junction TemperatureT
Storage T emperatureT
Collector-Emitter Voltage (G-E Short)V
Gate-Emitter Voltage (C-E Short)V
Collector Current*** (DC, TC' = 93°C) I
Peak Collector CurrentI
Emitter Current** (TC = 25°C)I
Peak Emitter Current**I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)P
j
stg
CES
GES
C
CM
E
EM
C
Mounting Torque, M5 Main Terminal—30in-lb
Mounting Torque, M6 Mounting—40in-lb
Weight—310Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)V
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
jMAX
rating.
ISO
–40 to 150°C
–40 to 125°C
600Volts
±20Volts
200 Amperes
400*Amperes
200Amperes
400*Amperes
650Watts
2500Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)
***Tc' measured point is just under chips. If this value is used, Rth(f-a) should be measured just under chips