Powerex CM200DY-12NF Data Sheet

CM200DY-12NF

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

TC MEASURED POINT
(BASEPLATE)

A

FF

EE

B

N

C2E1 E2 C1

L

(2 PLACES)

PPP

C

V

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0
B 1.89 48.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.67 17.0
F 0.91 23.0
G 0.16 4.0
H 0.71 18.0

J 0.51 13.0

K 0.47 12.0

G2
E2

E1
G1

KKK

D

QQ

LABEL

G2
E2

C1E2C2E1

E1
G1

Dimensions Inches Millimeters

L 0.26 Dia. Dia. 6.5
M M5 Metric M5
N 0.79 20.0
P 0.63 16.0
Q 0.28 7.0
R 0.83 21.2
S 0.30 7.5

T 0.02 0.5
U 0.110 2.8
V 0.16 4.0

J

M NUTS
(3 PLACES)

T THICK
U WIDTH

S

R

G

H

G

Dual IGBTMOD™
NF-Series Module

200 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ UPS
□ Battery Powered Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM200DY-12NF is a 600V (V
200 Ampere Dual IGBTMOD™
Power Module.

Type Current Rating V

CM 200 12

CE(sat)

Free-Wheel Diode
Heat Sinking

CES

CES

Amperes Volts (x 50)

),

1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DY-12NF
Dual IGBTMOD™ NF-Series Module

200 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200DY-12NF Units

Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current*** (DC, TC' = 93°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

C

Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T

jMAX

rating.

ISO

–40 to 150 °C
–40 to 125 °C

600 Volts
±20 Volts

200 Amperes

400* Amperes

200 Amperes

400* Amperes

650 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

IC = 20mA, VCE = 10V 5.0 6.0 7.5 Volts

IC = 200A, VGE = 15V, Tj = 25°C—1.7 2.2 Volts

IC = 200A, VGE = 15V, Tj = 125°C—1.7 — Volts
Total Gate Charge Q
Emitter-Collector Voltage** V

G

EC

VCC = 300V, IC = 200A, VGE = 15V — 800 — nC

IE = 200A, VGE = 0V — — 2.6 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Time Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)

***Tc' measured point is just under chips. If this value is used, Rth(f-a) should be measured just under chips

ies
oes
res

d(on)

r

d(off)

f

rr

rr

VCE = 10V, VGE = 0V — — 3.7 nf

VCC = 300V, IC = 200A, — — 120 ns

V

= V

GE1

= 15V, RG = 3.1Ω,——300 ns

GE2

Inductive Load — — 300 ns

Switching Operation, — — 150 ns

IE = 200A — 3.5 — µC

j(max)

rating.

—— 30nf

—— 1.2 nf
——120 ns

2

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DY-12NF
Dual IGBTMOD™ NF-Series Module

200 Amperes/600 Volts

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R
External Gate Resistance R

QPer IGBT 1/2 Module, TC Reference — — 0.19 °C/W

th(j-c)

Point per Outline Drawing

DPer FWDi 1/2 Module, TC Reference — — 0.35 °C/W

th(j-c)

Point per Outline Drawing

QPer IGBT 1/2 Module, — — 0.13 °C/W

th(j-c')

TC Reference Point Under Chips

th(c-f)

Per 1/2 Module, Thermal Grease Applied — 0.07 — °C/W

G

3.1 — 31 Ω

OUTPUT CHARACTERISTICS

(TYPICAL)

400

VGE =

20V

13

15

300

, (AMPERES)

C

200

100

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

Tj = 25°C

= 125°C

T

j

(TYPICAL)

3

10

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

01 3425

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

8

Tj = 25

12

11

10

9

o

C

SATURATION VOLTAGE CHARACTERISTICS

4

)

3

, (VOLTS

CE(sat)

COLLECTOR-EMITTER

VGE = 15V

Tj = 25°C

= 125°C

T

j

(TYPICAL)

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

2

10

, (nF)

res

1

, C

10

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

100

0

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

VGE = 0V

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

10

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

4

COLLECTOR-EMITTER

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

IC = 400A

IC = 200A
IC = 80A

2

SATURATION VOLTAGE, V

0

400300200

CE

C

ies

C

oes

C

res

1

2

10

6810 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

1

10

SWITCHING TIME, (ns)

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

(TYPICAL)

2

10

t

f

t

d(off)

t

d(on)

t

r

VCC = 300V
V

= ±15V

GE

R

= 3.1Ω

G

T

= 125°C

j

Inductive Load

3

10

3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DY-12NF
Dual IGBTMOD™ NF-Series Module

200 Amperes/600 Volts

REVERSE RECOVERY CHARACTERISTICS

3

10

VCC = 300V
V

GE

R

= 3.1Ω
T
Inductive Load

2

10

1

10

1

10

2

10

VCC = 300V
V
I
T
Inductive Load
C Snubber at Bus

1

10

0

10

0

10

G

= 25°C

j

GE

= 200A

C

= 125°C

j

, (ns)

rr

REVERSE RECOVERY TIME, t

, (mJ/PULSE)

SW( off)

, E

SW( on)

SWITCHING LOSS, E

(TYPICAL)

= ±15V

2

EMITTER CURRENT, IE, (AMPERES)

GATE RESISTANCE (TYPICAL)

10

SWITCHING LOSS VS.

= ±15V

1

10

GATE RESISTANCE, RG, (Ω)

E

SW(on)

E

SW(off)

3

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

IC = 200A

VCC = 200V

12

GATE CHARGE VS. V

2

10

8

I

rr

t

rr

10

3

10

2

10

4

GATE-EMITTER VOLTAGE, V

1

REVERSE RECOVERY CURRENT, I

0

200 400 600 12001000800

0

10-310

0

th(j-c')

10

-1

10

¥ (NORMALIZED VALUE)

-2

10

th

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

GATE CHARGE, QG, (nC)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

-2

10

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

th(j-c)

0.19°C/W
(IGBT)
R

=

th(j-c)

0.35°C/W
(FWDi)

10

TIME, (s)

-1

-5

GE

VCC = 300V

0

10

-4

10

1

10

, (mJ/PULSE)

SW( off)

, E

0

10

SW( on)

SWITCHING LOSS, E

-1

10

10

1

10

-1

10

-2

10

-3

10

-3

10

SWITCHING LOSS VS.

COLLECTOR CURRENT (TYPICAL)

VCC = 300V
V

= ±15V

GE

R

= 3.1Ω

G

T

= 125°C

j

Inductive Load
C Snubber at Bus

E
E

1

COLLECTOR CURRENT, I

10

2

, (AMPERES)

C

SW(on)
SW(off)

3

10

4