Powerex CM200DX-34SA Data Sheet

CM200DX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

A D

AZ L

AB (4 PLACES)

AF (4 PLACES)

1 2 3 4 5

(10)

(11)

Es2(9)

G1(3)

Di2

G2(8)

Tr2

Di1

Tr1

Es1(4)

E F

TH2

(2)

DETAIL "C"

DETAIL "A"

Cs1(5)

DETAIL "B"

C2E1

(7)

TH1

C2E1

(6)

AA AY

NTC

(1)

Tolerance Otherwise Specified (mm)

The tolerance of size between terminals is assumed to ±0.4

45°

Division of Dimension Tolerance

0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0

B 2.44 62.0

C 0.67+0.04/-0.02 17.0+1.0/-0.5

D 5.39 137.0

E 4.79 121.7

F 4.33±0.02 110.0±0.5

G 3.72 94.5

H 0.60 15.14

J 0.53 13.5

K 0.31 7.75

L 1.33±0.012 33.91±0.3

M 2.28±0.012 57.95±0.3

N 1.54 39.0

P 0.87 22.0

Q 0.017±0.012 0.45±0.3

R 0.55 14.0

S 0.47 12.0

T 0.24 6.0

U 0.31 8.0

V 0.26 6.5

W 0.62 15.64

X 0.28±0.012 7.24±0.3

Y 0.15 3.81

Z 1.95±0.012 49.53±0.3

Dimensions Inches Millimeters

AA 0.9±0.012 22.86±0.3

AB 0.22 Dia. 5.5 Dia.

AC 1.97±0.02 50.0±0.5

AD 2.26 57.5

AE 0.15 3.75

AF M6 M6

AG 0.28 7.0

AH 0.14 3.5

AJ 0.03 0.8

AK 0.81 20.5

AL 0.70 17.0

AM 0.12 3.0

AN 0.65 16.5

AP 0.49 12.5

AQ 0.18 4.5

AR 0.102 Dia. 2.6 Dia.

AS 0.089 Dia. 2.25 Dia.

AT 0.05 1.2

AU 0.03 0.65

AV 0.05 1.15

AW 0.54 13.7

AX 0.52 13.0

AY 0.285 7.25

AZ 1.45±0.012 37.72±0.3

DETAIL "A"

DETAIL "B"

Dual IGBT NX-Series Module

200 Amperes/1700 Volts

Description:

Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Features:

£ Low Drive Power £ Low V £ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete module number you desire from the table below -i.e. CM200DX-34SA is a 1700V (V

CES

Power Module.

Type Current Rating Amperes Volts (x 50)

CM 200 34

CE(sat)

Free-Wheel Diode

Heat Sinking

), 200 Ampere Dual IGBT

CES

102/14 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

CM200DX-34SA Dual IGBT NX-Series Module

200 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/Diode

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)

*2,*4

IC 200 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

Emitter Current (DC)*2 I

Emitter Current (Pulse, Repetitive)*3 I

1700 Volts

CES

±20 Volts

GES

400 Amperes

CRM

2000 Watts

tot

200 Amperes

400 Amperes

ERM

Module

Characteristics Symbol Rating Units

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

Maximum Junction Temperature, Instantaneous Event (Overload) T

Maximum Case Temperature*4 T

Operating Junction Temperature, Continuous Operation (Under Switching) T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (T *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips.

j(max)

) rating.

j(max)

rating.

Tr2

Di2

Tr2

Di2

32.8

42.0

Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip.

4000 Volts

ISO

175 °C

j(max)

125 °C

C(max)

-40 ~ +150 °C

j(op)

-40 ~ +125 °C

stg

Di1Di1

Tr1 Tr 1

LABEL SIDE

75.8

44.8

88.3

42.4

34.5

30.0

22.4

21.9

02/14 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

CM200DX-34SA Dual IGBT NX-Series Module

200 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Inverter Part IGBT/Diode

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 200A, VGE = 15V, Tj = 125°C*5 — 2.2 — Volts

IC = 200A, VGE = 15V, Tj = 150°C*5 — 2.25 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 200A, VGE = 15V, Tj = 125°C*5 — 2.1 — Volts

IC = 200A, VGE = 15V, Tj = 150°C*5 — 2.15 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 1000V, IC = 200A, VGE = 15V — 1100 — nC

Turn-on Delay Time t

Rise Time tr VCC = 1000V, IC = 200A, VGE = ±15V, — — 100 ns

Turn-off Delay Time t

Fall Time tf — — 600 ns

Emitter-Collector Voltage V

(Terminal) IE = 200A, VGE = 0V, Tj = 125°C*5 — 2.9 — Volts

IE = 200A, VGE = 0V, Tj = 150°C*5 — 2.7 — Volts

Emitter-Collector Voltage V

(Chip) IE = 200A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts

IE = 200A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 200A, — 28 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 2.5 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 20mA, VCE = 10V 5.4 6 6.6 Volts

GE(th)

IC = 200A, VGE = 15V, Tj = 25°C*5 — 2.0 2.5 Volts

CE(sat)

IC = 200A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts

CE(sat)

— — 53 nF

ies

VCE = 10V, VGE = 0V — — 4.3 nF

oes

— — 0.97 nF

res

— — 400 ns

d(on)

RG = 0Ω, Inductive Load — — 700 ns

d(off)

IE = 200A, VGE = 0V, Tj = 25°C*5 — 4.1 5.3 Volts

IE = 200A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts

VCC = 1000V, IE = 200A, VGE = ±15V — — 300 ns

RG = 0Ω, Inductive Load — 8.0 — µC

VGE = ±15V, RG = 0Ω, — 52 — mJ

off

Tj = 150°C, Inductive Load — 42 — mJ

CC' + EE'

Main Terminals-Chip, — — 1.2 mΩ

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 0.5 µA

GES

Tr2

Di2

Tr2

Di2

32.8

42.0

44.8

Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip.

Tr1 Tr 1

75.8

Di1Di1

LABEL SIDE

88.3

42.4

34.5

30.0

22.4

21.9

02/14 Rev. 3

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Powerex CM200DX-34SA Data Sheet

Specifications and Main Features

Frequently Asked Questions

User Manual