How it Works
Powerex
Loading...
CM200DX-34SA
Data Sheet
9 pgs1.24 Mb0

Powerex CM200DX-34SA Data Sheet

Download
®
CM200DX-34SA
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
A D
H
J
K
AZ L
AB (4 PLACES)
T
M
P
N
S
R
Q
AG
R
U
10
AF (4 PLACES)
11
1 2 3 4 5
V
W
E2
(10)
C1
(11)
X
Es2(9)
Y
G1(3)
Di2
G2(8)
Tr2
Di1
Tr1
Es1(4)
E F
G
Y
89
AC
TH2
(2)
7
6
AW
AX
DETAIL "C"
AD
AE
AH
C
K
DETAIL "C"
DETAIL "A"
Z
Cs1(5)
Y
DETAIL "B"
C2E1
(7)
TH1
C2E1
(6)
AA AY
Th
NTC
(1)
AK
AJ
B
AM
AN
Tolerance Otherwise Specified (mm)
The tolerance of size between terminals is assumed to ±0.4
45°
AE
AW
AL
AG
Division of Dimension Tolerance
0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2
AT
AQ
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.98 152.0
B 2.44 62.0
C 0.67+0.04/-0.02 17.0+1.0/-0.5
D 5.39 137.0
E 4.79 121.7
F 4.33±0.02 110.0±0.5
G 3.72 94.5
H 0.60 15.14
J 0.53 13.5
K 0.31 7.75
L 1.33±0.012 33.91±0.3
M 2.28±0.012 57.95±0.3
N 1.54 39.0
P 0.87 22.0
Q 0.017±0.012 0.45±0.3
R 0.55 14.0
S 0.47 12.0
T 0.24 6.0
U 0.31 8.0
V 0.26 6.5
W 0.62 15.64
X 0.28±0.012 7.24±0.3
Y 0.15 3.81
Z 1.95±0.012 49.53±0.3
Dimensions Inches Millimeters
AA 0.9±0.012 22.86±0.3
AB 0.22 Dia. 5.5 Dia.
AC 1.97±0.02 50.0±0.5
AD 2.26 57.5
AE 0.15 3.75
AF M6 M6
AG 0.28 7.0
AH 0.14 3.5
AJ 0.03 0.8
AK 0.81 20.5
AL 0.70 17.0
AM 0.12 3.0
AN 0.65 16.5
AP 0.49 12.5
AQ 0.18 4.5
AR 0.102 Dia. 2.6 Dia.
AS 0.089 Dia. 2.25 Dia.
AT 0.05 1.2
AU 0.03 0.65
AV 0.05 1.15
AW 0.54 13.7
AX 0.52 13.0
AY 0.285 7.25
AZ 1.45±0.012 37.72±0.3
AQ
AR
AS
AP
DETAIL "A"
AV
AU
Y
DETAIL "B"
AM
Dual IGBT NX-Series Module
200 Amperes/1700 Volts
Description:
Features:
£ Low Drive Power £ Low V £ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete module number you desire from the table below -i.e. CM200DX-34SA is a 1700V (V
CES
Power Module.
Type Current Rating Amperes Volts (x 50)
CM 200 34
CE(sat)
Free-Wheel Diode
Heat Sinking
), 200 Ampere Dual IGBT
V
CES
102/14 Rev. 3
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DX-34SA Dual IGBT NX-Series Module
200 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/Diode
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 125°C)
*2,*4
IC 200 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
*2,*4
P
Emitter Current (DC)*2 I
Emitter Current (Pulse, Repetitive)*3 I
1700 Volts
CES
±20 Volts
GES
400 Amperes
CRM
2000 Watts
tot
*1
200 Amperes
E
*1
400 Amperes
ERM
Module
Characteristics Symbol Rating Units
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
Maximum Junction Temperature, Instantaneous Event (Overload) T
Maximum Case Temperature*4 T
Operating Junction Temperature, Continuous Operation (Under Switching) T
Storage Temperature T
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (T *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips.
j(max)
) rating.
j(max)
rating.
Tr2
Di2
Tr2
Di2
Th
0
32.8
42.0
Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip.
4000 Volts
ISO
175 °C
j(max)
125 °C
C(max)
-40 ~ +150 °C
j(op)
-40 ~ +125 °C
stg
Di1Di1
Tr1 Tr 1
LABEL SIDE
75.8
44.8
88.3
42.4
34.5
30.0
22.4
21.9
0
2
02/14 Rev. 3
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DX-34SA Dual IGBT NX-Series Module
200 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Inverter Part IGBT/Diode
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal) IC = 200A, VGE = 15V, Tj = 125°C*5 — 2.2 — Volts
IC = 200A, VGE = 15V, Tj = 150°C*5 — 2.25 — Volts
Collector-Emitter Saturation Voltage V
(Chip) IC = 200A, VGE = 15V, Tj = 125°C*5 — 2.1 — Volts
IC = 200A, VGE = 15V, Tj = 150°C*5 — 2.15 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 1000V, IC = 200A, VGE = 15V — 1100 — nC
Turn-on Delay Time t
Rise Time tr VCC = 1000V, IC = 200A, VGE = ±15V, — — 100 ns
Turn-off Delay Time t
Fall Time tf — — 600 ns
Emitter-Collector Voltage V
(Terminal) IE = 200A, VGE = 0V, Tj = 125°C*5 — 2.9 — Volts
IE = 200A, VGE = 0V, Tj = 150°C*5 — 2.7 — Volts
Emitter-Collector Voltage V
(Chip) IE = 200A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts
IE = 200A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts
Reverse Recovery Time t
Reverse Recovery Charge Q
Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 200A, — 28 — mJ
Turn-off Switching Energy per Pulse E
Reverse Recovery Energy per Pulse E
Internal Lead Resistance R
Per Switch,TC = 25°C
Internal Gate Resistance rg Per Switch — 2.5 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
VGE = V
GES
IC = 20mA, VCE = 10V 5.4 6 6.6 Volts
GE(th)
IC = 200A, VGE = 15V, Tj = 25°C*5 — 2.0 2.5 Volts
CE(sat)
IC = 200A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts
CE(sat)
— — 53 nF
ies
VCE = 10V, VGE = 0V — — 4.3 nF
oes
— — 0.97 nF
res
— — 400 ns
d(on)
RG = 0Ω, Inductive Load — — 700 ns
d(off)
*1
IE = 200A, VGE = 0V, Tj = 25°C*5 — 4.1 5.3 Volts
EC
*1
IE = 200A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts
EC
*1
VCC = 1000V, IE = 200A, VGE = ±15V — — 300 ns
rr
*1
RG = 0Ω, Inductive Load — 8.0 — µC
rr
VGE = ±15V, RG = 0Ω, — 52 — mJ
off
*1
Tj = 150°C, Inductive Load — 42 — mJ
rr
CC' + EE'
Main Terminals-Chip, — — 1.2 mΩ
, VGE = 0V — — 1 mA
CES
, VCE = 0V — — 0.5 µA
GES
*4
Tr2
Di2
Tr2
Di2
Th
0
32.8
42.0
44.8
Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip.
Tr1 Tr 1
75.8
Di1Di1
LABEL SIDE
88.3
42.4
34.5
30.0
22.4
21.9
0
02/14 Rev. 3
3
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DX-34SA Dual IGBT NX-Series Module
200 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)
NTC Thermistor Part
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C, R
B Constant B
Approximate by Equation*6 — 3375 — K
(25/50)
= 493Ω*4 -7.3 — +7.8 %
100
Power Dissipation P25 TC = 25°C*4 — — 10 mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*4 R
Thermal Resistance, Junction to Case*4 R
Contact Thermal Resistance, R
Case to Heatsink*2 (Per 1 Module)
Q Per Inverter IGBT — — 0.075 K/W
th(j-c)
D Per Inverter Diode — — 0.12 K/W
th(j-c)
Thermal Grease Applied — 15 — K/kW
th(c-f)
*7
Mechanical Characteristics
Mounting Torque Mt Mounting to Heatsink, M6 Screw 31 35 39.8 in-lb
Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb
Creepage Distance ds Terminal to Terminal 17.0 — — mm
Terminal to Baseplate 18.5 — — mm
Clearance da Terminal to Terminal 10.0 — — mm
Terminal to Baseplate 16.3 — — mm
Weight m — 350 — Grams
Flatness of Baseplate ec On Centerline X, Y*8 ±0 — +100 µm
Recommended Operating Conditions, Ta = 25°C
(DC) Supply Voltage VCC Applied Across C1-E2 — 1000 1200 Volts
Gate (-Emitter Drive) Voltage V
External Gate Resistance RG Per Switch 0 — 38 Ω
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips.
*6 B
(25/50)
R
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
= In(
R
25
)/( 1 –
50 T25 T50
1
)
+ : CONVEX
– : CONCAVE
Y
MOUNTING
SIDE
X
Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts
GE(on)
Tr2
Di2
Tr2
Di2
Th
0
32.8
42.0
Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip.
Tr1 Tr 1
75.8
44.8
Di1Di1
LABEL SIDE
88.3
42.4
34.5
30.0
22.4
21.9
0
MOUNTING SIDE
MOUNTING SIDE
4
– : CONCAVE
+ : CONVEX
02/14 Rev. 3
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DX-34SA Dual IGBT NX-Series Module
200 Amperes/1700 Volts
OUTPUT CHARACTERISTICS
400
Tj = 25°
C
15
300
, (AMPERES)
C
200
100
COLLECTOR CURRENT, I
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
, (AMPERES)
E
2
10
(CHIP - TYPICAL)
VGE = 20V
(CHIP - TYPICAL)
SATURATION VOLTAGE CHARACTERISTICS
COLLECTOR-EMITTER
(CHIP - TYPICAL)
4.5
(Chip) (Chip)
11
, (VOLTS)
CE(sat)
4.0
3.5
3.0
VGE = 15V
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
2.5
10
2.0
1.5
9
8
COLLECTOR-EMITTER
1.0
0.5
SATURATION VOLTAGE, V
0
0
COLLECTOR CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(TYPICAL)
3
10
10
10
VGE = 0V
2
1
(Chip)
, (nF)
res
, C
oes
, C
ies
CE
C
400300100 200
ies
EMITTER CURRENT, I
1
10
0 2 1 53 4 6
EMITTER-COLLECTOR VOLTAGE, V
02/14 Rev. 3
, (VOLTS)
EC
0
10
CAPACITANCE, C
-1
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
10
C
oes
C
res
0
10
1
10
2
5
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DX-34SA Dual IGBT NX-Series Module
200 Amperes/1700 Volts
SWITCHING CHARACTERISTICS
3
10
t
d(off)
t
f
2
10
SWITCHING TIME, (ns)
t
r
1
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
4
10
HALF-BRIDGE
(TYPICAL)
t
d(on)
VCC = 1000V V
GE
R
G
T
= 125°C
j
Inductive Load
2
10
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
= ±15V
= 0Ω
10
SWITCHING CHARACTERISTICS
HALF-BRIDGE
(TYPICAL)
3
10
t
d(off)
t
f
t
d(on)
2
10
SWITCHING TIME, (ns)
t
r
1
10
3
1
10
COLLECTOR CURRENT, I
10
VCC = 1000V V R T Inductive Load
2
, (AMPERES)
C
= ±15V
GE
= 0Ω
G
= 150°C
j
10
3
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
4
10
3
10
2
10
SWITCHING TIME, (ns)
1
10
-1
10
EXTERNAL GATE RESISTANCE, R
10
t
d(on)
d(off)
t
r
VCC = 1000V V
= ±15V
GE
I
= 200A
C
T
= 125°C
j
Inductive Load
1
10
, (Ω)
G
10
10
t
f
0
3
10
2
10
SWITCHING TIME, (ns)
1
10
2
-1
10
EXTERNAL GATE RESISTANCE, RG, (Ω)
t
t
f
0
t
d(on)
t
d(off)
t
r
VCC = 1000V V
= ±15V
GE
I
= 200A
C
T
= 150°C
j
Inductive Load
1
10
10
2
6
02/14 Rev. 3
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DX-34SA Dual IGBT NX-Series Module
200 Amperes/1700 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
3
10
(ns)
rr
(A), t
rr
2
10
VCC = 1000V V R T Inductive Load
REVERSE RECOVERY, I
1
10
10
1
EMITTER CURRENT, IE, (AMPERES)
10
2
GATE CHARGE VS. V
20
IC = 200A V
= 1000V
CC
15
, (VOLTS)
GE
= ±15V
GE
= 0Ω
G
= 125°C
j
I
rr
t
rr
GE
10
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
3
10
(ns)
rr
(A), t
rr
2
10
VCC = 1000V V
= ±15V
GE
R
= 0Ω
G
T
= 150°C
j
Inductive Load
REVERSE RECOVERY, I
1
3
10
10
1
EMITTER CURRENT, IE, (AMPERES)
10
2
I
rr
t
rr
3
10
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
10
, (mJ)
off
, E
10
on
3
VCC = 1000V V
GE
R
G
T
j
2
= ±15V
= 0Ω
= 125°C
10
10
2
, (mJ)
rr
1
10
5
GATE-EMITTER VOLTAGE, V
0
2 4 6
0
GATE CHARGE (x 100), QG, (nC)
02/14 Rev. 3
8 10 12 181614
1
10
SWITCHING ENERGY, E
Inductive Load Per Pulse
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
10
0
10
E
on
E
off
E
rr
2
10
REVERSE RECIVERY ENERGY, E
-1
10
3
7
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DX-34SA Dual IGBT NX-Series Module
200 Amperes/1700 Volts
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
3
10
VCC = 1000V V
= ±15V
GE
R
= 0Ω
2
1
G
T
= 150°C
j
, (mJ)
off
, E
10
on
10
SWITCHING ENERGY, E
Inductive Load Per Pulse
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
3
10
VCC = 1000V V
= ±15V
2
GE
I
= 200A
C
T
= 150°C
j
E
on
E
off
E
rr
, (mJ)
rr
, (mJ)
off
, E
on
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
Inductive Load Per Pulse
1
10
-1
10
EXTERNAL GATE RESISTANCE, RG, (Ω)
10
0
10
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
2
10
, (mJ)
rr
1
10
0
10
E
on
E
off
E
rr
2
10
REVERSE RECIVERY ENERGY, E
-1
10
3
3
10
V
= 1000V
CC
V
= ±15V
GE
I
= 200A
2
C
T
= 125°C
j
E
on
E
off
E
rr
, (mJ)
rr
, (mJ)
off
, E
on
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
Inductive Load Per Pulse
1
10
-1
10
EXTERNAL GATE RESISTANCE, RG, (Ω)
10
0
10
1
10
2
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - MAXIMUM)
0
th(j-c')
10
-1
10
Single Pulse T
= 25°C
C
Per Unit Base = R
=
• (NORMALIZED VALUE)
-2
10
th
= R
th
Z
th(j-c)
0.075 K/W (IGBT) R
=
th(j-c)
0.12 K/W (FWDi)
-3
10
1
10
2
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
10
-5
10
-3
-4
10
10-210-110010
TIME, (s)
1
8
02/14 Rev. 3
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DX-34SA Dual IGBT NX-Series Module
200 Amperes/1700 Volts
TEMPERATURE CHARACTERISTICS
(NTC THERMISTOR PART - TYPICAL)
2
10
1
10
0
10
RESISTANCE, R (kΩ)
10
-1
-50 25 50 100750-25
125
TEMPERATURE, T (°C)
02/14 Rev. 3
9
Loading...
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use