Powerex CM1800HCB-34N Data Sheet
CM1800HCB-34N
G
T
U NUTS
(3 TYP)
P
Q
S
A
D
LLL
V NUTS
(6 TYP)
B
W
(8 TYP)
H
J
KM
NN
X
C
F
R
E
G
E
C
C
EE
CC
C
CM
EG
E
C
E
E
C
C
E
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Single IGBTMOD™
HVIGBT Module
1800 Amperes/1700 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 7.48±0.02 190.0±0.5
B 5.51±0.02 140.0±0.5
C 1.50+0.04/-0.0 38.0+1.0/-0.0
D 6.73±0.004 171.0±0.1
E 4.88±0.004 124.0±0.1
F 1.57±0.008 40.0±0.2
G 0.79+0.04/-0.008 20.0+1.0/-0.2
H 0.80±0.008 20.25±0.2
J 1.62±0.012 41.25±0.3
K 3.13±0.012 79.4±0.3
L 2.24±0.004 57.0±0.1
Dimensions Inches Millimeters
M 0.51±0.008 13.0±0.2
N 2.42±0.012 61.5±0.3
P 0.59±0.008 15.0±0.2
Q 1.57±0.012 40.0±0.3
R 0.20±0.008 5.2±0.2
S 1.16±0.02 29.5±0.5
T 1.10+0.04/-0.0 28.0+1.0/-0.0
U M4 Metric M4
V M8 Metric M8
W 0.28±0.004 Dia. 7.0±0.1 Dia.
X 0.20±0.006 5.0±0.15
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V
CE(sat)
£ Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1800HCB-34N is a 1700V
(V
), 1800 Ampere Single
CES
IGBTMOD™ Power Module.
Type Current Rating
Amperes Volts
CM 1800 1700
V
CES
112/08
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1800HCB-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied
Ratings Symbol CM1800HCB-34N Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature T
Operating Temperature Top -40 to 125 °C
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, Tc = 80°C) IC 1800 Amperes
Peak Collector Current (Pulse) ICM 3600* Amperes
Diode Forward Current** (Tc = 25°C) IE 1800 Amperes
Diode Forward Surge Current** (Pulse) IEM 3600* Amperes
Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj ≤ 150°C) PC 13800 Watts
Max. Mounting Torque M8 Terminal Screws – 115 in-lb
Max. Mounting Torque M6 Mounting Screws – 53 in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb
Max. Turn-off Switching Current (VCC ≤ 1200V, VGE = ±15V, Tj = 125°C) – 3600 Amperes
Short-circuit Capability, Max. Pulse Width (VCC ≤ 1000V, VGE = ±15V, Tj = 125°C) – 10 μs
Max. Reverse Recovery Instantaneous Power** – 540 kW
(VCC ≤ 1200V, diE/dt ≤ t.b.d A/μs, Tj = 125°C)
Module Weight (Typical) – 1.5 kg
V Isolation (Charged Part to Baseplate, AC 60Hz 1 min.) V
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
op(max)
rating.
-40 to 125 °C
stg
1700 Volts
CES
±20 Volts
GES
4000 Volts
iso
Static Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
V
Gate-Emitter Threshold Voltage V
Gate Leakage Current I
Collector-Emitter Saturation Voltage V
I
Total Gate Charge QG VCC = 900V, IC = 1800A, VGE = 15V – 13.6 – μC
Emitter-Collector Voltage** VEC I
I
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
V
CES
I
GE(th)
V
GES
IC = 1800A*, VGE = 15V, Tj = 25°C – 2.0 – Volts
CE(sat)
= V
CE
= V
CE
= 1800A*, VGE = 15V, Tj = 125°C – 2.2 – Volts
C
= 1800A*, VGE = 0V, Tj = 25°C – 2.35 – Volts
E
= 1800A*, VGE = 0V, Tj = 125°C – 1.85 – Volts
E
, VGE = 0V, Tj = 25°C – – 8.0 mA
CES
, VGE = 0V, Tj = 125°C – – 16.0 mA
CES
= 180mA, VCE = 10V 5.0 6.0 7.0 Volts
C
= V
GE
, VCE = 0V – – 0.5 μA
GES
2 12/08
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