Powerex CM1800DY-34S Data Sheet

CM1800DY-34S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

AN

F

J (18 PLACES)

E2 E2

D

E

AT

C1 C1

K

F

AF AF AF

E2 E2

C1 C1

AP

K

M (8 PLACES)

AG AJ

AFAF

E2 (Es2)

A

AQ

E2 G2 C2

L

L

G1 E1 C1

F

G2

Di1

Tr 1

G1

AR

P

Q

P

N

AM

Tr 2

Di2

E1 (Es1)

S

L

L

R

AKAH

C2 (Cs2)

C1 (Cs1)

G

C2E1

C2E1

K

AC

AF

F

AL

F

C2E1

C2E1

T

AE

NTC

AS

H (12 PLACES)

F

V

B

C

AA

F

W

U

TH1

TH2

AB

AU

AC
(SCREWING
DEPTH)

Z
(SCREWING
DEPTH)

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8

over 120 to 400 ±1.2
The tolerance of size between
terminals is assumed to ±0.4

AD

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 12.2 310.0

B 5.6 142.5

C 4.96 126.0

D 1.89 48.0

E 1.85 46.9

F 0.28 7. 0

G 2.28 58.0

H 0.21±0.004 Dia. 5.5±0.1 Dia.

J M6 Metric M6

K 1.65 42.0

L 0.91 23.0

M M4 Metric M4

N 0.35 9.0

P 0.47 11.9

Q 0.21 5.4

R 0.33 8.5

S 4.92 125.0

T 0.6 15.0

U 0.83 21.0

V 1.5 38.0

W 2.04 51.9

X 1.85+0.04/-0.02 47.1+1.0/-0.5

Dimensions Inches Millimeters

Z 0.63 16.0

AA 0.24 6.2

AB 0.16 4.0

AC 0.45 11.5

AD 2.01+0.04/-0.02 51.0+1.0/-0.5

AE 0.32 8.2

AF 0.55 14.0

AG 2.05 52.0

AH 0.59 15.0

AJ 7.01 178.0

AK 3.98 101.0

AL 1.63 41.5

AM 1.54 39.0

AN 11.42 290.0

AP 9.13 232.0

AQ 6.85 174.0

AR 4.56 116.0

AS 0.39 10.0

AT 0.03 8.0

AU 0.02 5.0

AV 0.16 4.0

AW 1.425+0.04/-0.02 36.2+1.0/-0.5

Y 1.55 39.4

6/14 Rev. 4

Dual Half-Bridge
IGBT HVIGBT
Series Module

1800 Amperes/1700 Volts

X

Y

AV

AW

Description:

Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£

£ Isolated Baseplate for Easy

£ NTC Thermistor

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Wind
£ UPS Inverter

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM1800DY-34S is a 1700V
(V

CES

Bridge IGBT HVIGBT Power
Module.

Type Current Rating
Amperes Volts (x 50)

CM 1800 34

CE(sat)

Discrete Super-Fast Recovery
Free-Wheel Diode

Heat Sinking

), 1800 Ampere Dual Half-

V

CES

1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM1800DY-34S
Dual Half-Bridge IGBT HVIGBT Module

1800 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 105°C)

*2,*4

IC 1800 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Maximum Power Dissipation (TC = 25°C)

*2,*4

P

Emitter Current (DC)*2 I

Emitter Current (Pulse, Repetitive)*3 I

1700 Volts

CES

±20 Volts

GES

3600 Amperes

CRM

11535 Watts

tot

*1

1800 Amperes

E

*1

3600 Amperes

ERM

Module

Characteristics Symbol Rating Units

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

Maximum Junction Temperature, Instantaneous Event (Overload) T

Maximum Case Temperature*4 T

Operating Junction Temperature, Continuous Operation (Under Switching) T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

j(max)

) rating.

j(max)

rating.

284.2

256.0

226.2

Tr2

Di2

Tr2

Di2

286.0

Each mark points to the center position of each chip.

Tr1 / Tr2: IGBT Di1 / Di2: FWDi Th: NTC Thermistor

Tr2

Di1

Di2

Tr1

Tr2

Di1

Di2

Tr1

257.7

228.0

4000 V

ISO

175 °C

j(max)

125 °C

C(max)

-40 ~ 150 °C

j(opr)

-40 ~ 125 °C

stg

198.0

168.2

140.0

110.2

82.0

52.2

Tr2

Di1

Di2

Tr1

Tr2

Di1

Di2

Tr1

199.7

170.0

Tr2

Di1

Di2

Tr1

Tr2

Di1

Di2

Tr1

141.7

112.0

Tr2

Di1

Di2

Tr1

Tr2

Di1

Di2

Tr1

Th

83.7

54.0

46.5

Di1

Tr1

Di1

Tr1

24.0

25.7

0

10 1.2

96.2

87.7

82.7

59.2

54.2

45.7

40.7

24.5

0

0

LABEL SIDE

2

6/14 Rev. 4

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM1800DY-34S
Dual Half-Bridge IGBT HVIGBT Module

1800 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 1800A, VGE = 15V, Tj = 125°C*5 — 2.40 — Volts

IC = 1800A, VGE = 15V, Tj = 150°C*5 — 2.45 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 1800A, VGE = 15V, Tj = 125°C*5 — 2.30 — Volts

IC = 1800A, VGE = 15V, Tj = 150°C*5 — 2.35 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 1000V, IC = 1800A, VGE = 15V — 8400 — nC

Turn-on Delay Time t

Rise Time tr VCC = 1000V, IC = 1800A, VGE = ±15V, — — 200 ns

Turn-off Delay Time t

Fall Time tf — — 500 ns

Emitter-Collector Voltage V

(Terminal) IE = 1800A, VGE = 0V, Tj = 125°C*5 — 2.10 — Volts

IE = 1800A, VGE = 0V, Tj = 150°C*5 — 2.05 — Volts

Emitter-Collector Voltage V

(Chip) IE = 1800A, VGE = 0V, Tj = 125°C*5 — 2.00 — Volts

IE = 1800A, VGE = 0V, Tj = 150°C*5 — 1.95 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 1800A, — 722.8 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 1.1 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) are measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure on page 1 for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 180mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 1800A, VGE = 15V, Tj = 25°C*5 — 2.20 2.70 Volts

CE(sat)

IC = 1800A, VGE = 15V, Tj = 25°C*5 — 2.10 2.60 Volts

CE(sat)

— — 460 nF

ies

VCE = 10V, VGE = 0V — — 48 nF

oes

— — 8.0 nF

res

— — 1100 ns

d(on)

RG = 0Ω, Inductive Load — — 950 ns

d(off)

*1

IE = 1800A, VGE = 0V, Tj = 25°C*5 — 2.00 2.50 Volts

EC

*1

IE = 1800A, VGE = 0V, Tj = 25°C*5 — 1.90 2.40 Volts

EC

*1

VCC = 1000V, IE = 1800A, VGE = ±15V — — 350 ns

rr

*1

RG = 0Ω, Inductive Load — 80 — µC

rr

VGE = ±15V, RG = 0Ω, — 509.5 — mJ

off

*1

Tj = 150°C, Inductive Load — 509.2 — mJ

rr

CC' + EE'

Main Terminals-Chip, — 0.11 — mΩ

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 5.0 µA

GES

*4

6/14 Rev. 4

3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM1800DY-34S
Dual Half-Bridge IGBT HVIGBT Module

1800 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)

NTC Thermistor Part

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C, R

B Constant B

Approximate by Equation*6 — 3375 — K

(25/50)

= 493Ω*4 -7.3 — +7.8 %

100

Power Dissipation P25 TC = 25°C*4 — — 10 mW

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case*4 R

Thermal Resistance, Junction to Case*4 R

Contact Thermal Resistance, R

Case to Heatsink*4 (Per 1 Module)

Q Per IGBT — — 13 K/kW

th(j-c)

D Per FWDi — — 22 K/kW

th(j-c)

Thermal Grease Applied — 3.1 — K/kW

th(c-f)

*7

Mechanical Characteristics

Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb

Auxiliary Terminals, M4 Screw 12 13 15 in-lb

Ms Mounting, M5 Screw 22 27 31 in-lb

Creepage Distance ds Terminal to Terminal 16 — — mm

Terminal to Baseplate 25 — — mm

Clearance da Terminal to Terminal 16 — — mm

Terminal to Baseplate 24 — — mm

Weight m — 2 — kg

Flatness of Baseplate ec On Centerline X, Y*8 -50 — +100 µm

Recommended Operating Conditions, Ta = 25°C

DC Supply Voltage VCC Applied Across C1-E2 — 1000 1200 Volts

Gate-Emitter Drive Voltage V

External Gate Resistance RG Per Switch 0 — 2 Ω

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

R

*6 B

(25/50)

R

= In(

25

50 T25 T50

R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure
below.

MOUNTING SIDE

4

)/( 1 –

+ CONVEX

MOUNTING SIDE

1

)

RECOMMENDED AREA FOR EVEN APPLICATION
OF THERMALLY CONDUCTIVE GREASE
(PER BASEPLATE)

Y

e

c

- CONCAVE
X

MOUNTING

SIDE

- CONCAVE

+ CONVEX

Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts

GE(on)

284.2

256.0

226.2

198.0

168.2

140.0

110.2

82.0

52.2

Tr2

Di2

Tr2

Di2

286.0

Tr2

Di1

Di2

Tr1

Tr2

Di1

Di2

Tr1

257.7

228.0

Tr2

Di1

Di2

Tr1

Tr2

Di1

Di2

Tr1

199.7

170.0

Tr2

Di1

Di2

Tr1

Tr2

Di1

Di2

Tr1

141.7

112.0

Tr2

Di1

Di2

Tr1

Tr2

Di1

Tr1

83.7

Di1

Di2

Th

54.0

46.5

Each mark points to the center position of each chip.

Tr1 / Tr2: IGBT Di1 / Di2: FWDi Th: NTC Thermistor

Di1

Tr1

Tr1

24.0

25.7

0

96.2

82.7

54.2

40.7

24.5

0

0

LABEL SIDE

6/14 Rev. 4

10 1.2

87.7

59.2

45.7

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM1800DY-34S
Dual Half-Bridge IGBT HVIGBT Module

1800 Amperes/1700 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

4000

12

3500

15

VGE = 20V

3000

2500

, (AMPERES)

C

13.5
11

2000

10

1500

1000

500

COLLECTOR CURRENT, I

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

8

, (VOLTS)

CE(sat)

6

IC = 3600A

9

Tj = 25°C

Tj = 25°C

(Chip)

SATURATION VOLTAGE CHARACTERISTICS

3.5

VGE = 15V

3.0

Tj = 25°C
T

, (VOLTS)

2.5

CE(sat)

T

2.0

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR CURRENT, IC, (AMPERES)

FORWARD CHARACTERISTICS

4

10

Tj = 25°C
T
T

3

10

, (AMPERES)

E

COLLECTOR-EMITTER

(TYPICAL)

= 125°C

j

= 150°C

j

FREE-WHEEL DIODE

(TYPICAL)

= 125°C

j

= 150°C

j

(Chip)

36001200600 1800 2400 3200

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

6/14 Rev. 4

IC = 1800A

IC = 720A

2

10

EMITTER CURRENT, I

1

10

0 1.0 0.5 2.51.5 2.0 3.0

EMITTER-COLLECTOR VOLTAGE, V

(Chip)(Chip)

, (VOLTS)

EC

5

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM1800DY-34S
Dual Half-Bridge IGBT HVIGBT Module

1800 Amperes/1700 Volts

3

10

, (nF)

2

10

res

, C

oes

, C

ies

1

10

0

10

CAPACITANCE, C

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SWITCHING CHARACTERISTICS

4

10

3

10

t

d(on)

CAPACITANCE VS. V

(TYPICAL)

0

10

HALF-BRIDGE

(TYPICAL)

t

d(off)

10

t

f

CE

C

ies

C

oes

C

res

VGE = 0V

1

10

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(TYPICAL)

4

10

t

d(off)

3

10

10

SWITCHING TIME, (ns)

2

10

2

1

t

d(on)

t

r

2

10

COLLECTOR CURRENT, I

10

t

f

VCC = 1000V
V

GE

R

G

T

= 125°C

j

Inductive Load

3

, (AMPERES)

C

= ±15V

= 0Ω

10

4

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

4

10

VCC = 1000V
V

= ±15V

GE

I

= 1800A

C

T

= 125°C

j

Inductive Load

t

10

d(on)

3

t

d(off)

2

10

SWITCHING TIME, (ns)

t

r

1

10

2

10

6

3

10

COLLECTOR CURRENT, I

VCC = 1000V
V

= ±15V

GE

R

= 0Ω

G

T

= 150°C

j

Inductive Load

, (AMPERES)

C

10

t

f

SWITCHING TIME, (ns)

2

10

4

-1

10

EXTERNAL GATE RESISTANCE, R

10

t

r

0

, (Ω)

G

10

1

6/14 Rev. 4

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM1800DY-34S
Dual Half-Bridge IGBT HVIGBT Module

1800 Amperes/1700 Volts

4

10

VCC = 1000V
V

= ±15V

GE

I

= 1800A

C

T

= 150°C

j

Inductive Load

3

10

SWITCHING TIME, (ns)

2

10

-1

10

EXTERNAL GATE RESISTANCE, RG, (Ω)

REVERSE RECOVERY CHARACTERISTICS

4

10

VCC = 1000V
V

= ±15V

GE

R

= 0Ω

(ns)

rr

(A), t

rr

G

T

= 150°C

j

Inductive Load

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

t

d(on)

t

d(off)

t

f

t

r

0

10

(TYPICAL)

10

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

4

10

(ns)

rr

(A), t

rr

10

REVERSE RECOVERY, I

10

1

VCC = 1000V
V

GE

R

= 0Ω

G

T

= 125°C

j

Inductive Load

3

2

2

10

= ±15V

3

10

EMITTER CURRENT, IE, (AMPERES)

GATE CHARGE VS. V

GE

I

rr

t

rr

4

10

20

IC = 1800A
V

= 1000V

CC

15

, (VOLTS)

GE

3

10

REVERSE RECOVERY, I

2

10

2

10

6/14 Rev. 4

3

10

EMITTER CURRENT, IE, (AMPERES)

10

5

I

rr

t

rr

4

10

GATE-EMITTER VOLTAGE, V

0

2000 4000 6000 120008000 10000

0

GATE CHARGE, QG, (nC)

7

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM1800DY-34S
Dual Half-Bridge IGBT HVIGBT Module

1800 Amperes/1700 Volts

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

3

10

, (mJ)

off

, E

on

2

10

SWITCHING ENERGY, E

1

10

2

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

4

10

VCC = 1000V
V

= ±15V

, (mJ)

, (mJ)

off

, E

on

rr

GE

I

= 1800A

C

T

= 125°C

j

Inductive Load,
Per Pulse

3

10

10

V

CC

V

GE

R

G

T

j

Inductive Load,
Per Pulse

3

= 1000V
= ±15V

= 0Ω

= 125°C

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

10

10

4

, (mJ)

3

3

10

rr

, (mJ)

off

, E

on

10

2

V

= 1000V

CC

V

= ±15V

GE

R

= 0Ω

G

T

= 150°C

j

10

10

4

, (mJ)

rr

3

Inductive Load,
Per Pulse

E

on

E

off

E

rr

10

4

10

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

2

10

1

2

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

10

3

E

on

E

off

E

rr

10

REVERSE RECIVERY ENERGY, E

2

10

4

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

4

, (mJ)

, (mJ)

off

, E

on

10

rr

10

V

CC

V

GE

I

= 1800A

C

T

= 150°C

j

Inductive Load,
Per Pulse

3

= 1000V
= ±15V

E

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

2

10

-1

10

8

on

E

off

E

rr

EXTERNAL GATE RESISTANCE, RG, (Ω)

10

E

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

2

10

0

10

1

10

-1

on

E

off

E

rr

0

10

EXTERNAL GATE RESISTANCE, RG, (Ω)

10

1

6/14 Rev. 4

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM1800DY-34S
Dual Half-Bridge IGBT HVIGBT Module

1800 Amperes/1700 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(MAXIMUM)

th(j-c')

10

0

10

10

2

1

Single Pulse
T

= 25°C

-1

10

• (NORMALIZED VALUE)

th

= R

th

Z

C

Per Unit Base =
R

=

th(j-c)

13 K/k/W
(IGBT)
R

=

th(j-c)

0

10

RESISTANCE, R (kΩ)

22 K/k/W

10

(FWDi)

-1

10

-1

0

10

1

10

-50 25 50 100750-25

-2

10

10

-3

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

10

-2

TIME, (s)

TEMPERATURE CHARACTERISTICS

(NTC THERMISTOR PART - TYPICAL)

125

TEMPERATURE, T (°C)

6/14 Rev. 4

9