Powerex CM150TX-24S1 Data Sheet

1 5

0

sixpack (3φ Inverter)

OUTLINE DRAWING & INTERNAL CONNECTION

Dimension in mm

TERMINAL

SECTION A

INTERNAL CONNECTION

GWP(9)

W(21~23)

EWP(10)

P1(16~18)

NTC

TH1(19)

TH2(20)

GWN(11)

EWN(12)

GVP(5)

V(24~26)

EVP(6)

GVP(7)

EVP(8)

GUP(1)

U(27~29)

EUP(2)

GUN(3)

EUN(4)

N1(13~15)

P(30~32)

N(33~35)

< IGBT MODULES >

CM150TX-24S1

HIGH POWER SWITCHING USE
INSULATE D TYPE

Collector current IC .............….......................…

Collector-emitter voltage V
Maximum junction temperature T

●Flat base Type

●Copper base plate (non-plating)

●Tin plating pin terminals

●RoHS Directive compliant

●Recognized under UL1557, File E323585

APPLICATION

AC Motor Control, Motion/Servo Control, Power suppl y, etc.

......................… 1 2 0 0 V

CES

.............. 1 7 5 °C

jmax

A

t=0.8

Tolerance otherwise specified

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

Publication Date : December 2013

1

< IGBT MODULES >

V

Collector-emitter voltage

G-E short-circuited

1200

V

V

GES

Gate-emitter voltage

C-E short-circuited

± 20

V

(Note2, 4)

(Note3)

P

Total power dissipation

TC=25 °C

(Note2, 4)

935

W

IE

DC

150

ERM

(Note1)

(Note3)

V

Isolation voltage

Terminals to base plate, RMS, f=60 Hz, AC 1 min

4000

V

T

jmax

Maximum junction temperature

Instantaneous event (overload)

175

T

Cmax

Maximum case temperature

(Note4)

125

T

Storage temperature

-

-40 ~ +125

Min.

Typ.

Max.

I

CES

Collector-emitter cut-off current

VCE=V

CES

, G-E short-circuited

- - 1.0

mA

I

GES

Gate-emitter leakage current

VGE=V

GES

, C-E short-circuited

- - 0.5

μA

IC=150 A, VGE=15 V,

Tj=25 °C

-

1.80

2.25

Refer to the figure of test circuit

Tj=125 °C

-

2.00

-

(Note5)

Tj=150 °C

-

2.05

-

VGE=15 V,

Tj=125 °C

-

1.90

-

Tj=150 °C

-

1.95

-

C

ies

Input capacitance

- - 15

C

Reverse transfer capacitance

- - 0.25

QG

Gate charge

VCC=600 V, IC=150 A, VGE=15 V

-

315 - nC

t

d(on)

Turn-on delay time

- - 800

t

Turn-off delay time

- - 600

tf

Fall time - -

300

IE=150 A, G-E short-circuited,

Tj=25 °C

-

2.60

3.40

(Note5)

Tj=150 °C

-

2.10

-

IE=150 A,

Tj=25 °C

-

2.50

3.30

G-E short-circuited,

Tj=125 °C

-

2.06

-

(Note5)

t

(Note1)

Reverse recovery time

VCC=600 V, IE=150 A, VGE=±15 V,

- - 300

ns

Qrr

(Note1)

Reverse recovery charge

RG=0 Ω, Inductive load

-

4.0 - μC

Eon

Turn-on switching energy per pulse

VCC=600 V, IC=IE=150 A,

-

16.6

-

Err

(Note1)

Reverse recovery energy per pulse

Inductive load

-

10.8 - mJ

Main terminals-chip, per switch,

TC=25 °C

(Note4)

CM150TX-24S1

HIGH POWER SWITCHING USE
INSULATE D TYPE

MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified )

INVERTER PART IGBT/DIODE

Symbol Item Conditions Rating Unit

CES

IC
I

Pulse, Repetitive

CRM

tot

(Note1)

I

Collector current

Emitter current

Pulse, Repetitive

DC, TC=107 °C

(Note2)

150

300

300

MODULE

Symbol Item Conditions Rating Unit

isol

T

Operating junction temperature Continuous operation (under switching) -40 ~ +150

j op

stg

ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified )

INVERTER PART IGBT/DIODE

Symbol Item Conditions

V

Gate-emitter threshold voltage IC=15 mA, VCE=10 V 5.4 6.0 6.6 V

GE(th)

V

CE sat

(Terminal)

V

CE sat

(Chip)

Collector-emitter saturation voltage

IC=150 A, Tj=25 °C - 1.70 2.15

(Note5)

Limits

A

A

°C

°C

Unit

V

V

C

Output capacitance - - 3.0

oes

res

tr Rise time - - 200

d(off)

(Note1)

VEC

(Terminal)

VCE=10 V, G-E short-circuited

VCC=600 V, IC=150 A, VGE=±15 V,

RG=0 Ω, Inductive load

Refer to the figure of test circuit Tj=125 °C - 2.16 -

nF

ns

V

Emitter-collector voltage

(Note1)

VEC

(Chip)

rr

E

Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, Tj=150 °C, - 17.6 -

off

R

Internal lead resistance

CC'+EE'

Tj=150 °C - 2.00 -

- - 1.4 mΩ

V

mJ

rg Internal gate resistance Per switch - 13 - Ω

Publication Date : December 2013

2

< IGBT MODULES >

Min.

Typ.

Max.

R25

Zero-power resistance

TC=25 °C

4.85

5.00

5.15

kΩ

100

(Note4)

(Note6)

P25

Power dissipation

TC=25 °C

(Note4)

- - 10

mW

Limits

Min.

Typ.

Max.

(Note4)

R

Junction to case, per Inverter DIODE

(Note4)

- - 0.26

Case to heat sink, per 1 module,

Thermal grease applied

(Note4, 7)

Limits

Terminal to terminal

16.3 - -

Terminal to base plate

15.3 - -

ec

Flatness of base plate

On the centerline X, Y

(Note8)

±0 - +100

μm

)

TT

/()

R

R

ln(B

)/(

502550

25

5025

11

−=

Y

X

+:Convex

-

:Concave

+:Convex

-:Concave

mounting side

mounting side

mounting side

CM150TX-24S1

HIGH POWER SWITCHING USE
INSULATE D TYPE

ELECTRICAL CHARACTERISTICS (cont.; T

=25 °C, unless otherwise specified )

j

NTC THERMISTOR PART

Symbol Item Conditions

(Note4)

ΔR/R Deviation of resistance R
B

B-constant Approximate by equation

(25/50)

=493 Ω, TC=100 °C

-7.3 - +7.8 %

- 3375 - K

Limits

Unit

THERMAL RESISTANCE CHARACTERISTICS

Symbol Item Conditions

R

R

th(j-c)Q

th(j-c)D

Contact thermal resistance

th(c-s)

Thermal resistance

Junction to case, per Inverter IGBT

- - 0.16

- 15 - K/kW

Unit

K/W

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

Min. Typ. Max.
Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
m mass - - 330 - g

ds Creepage distance

da Clearance

Terminal to base plate 19.1 - -
Terminal to terminal 10.3 - -

Unit

mm

mm

Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).

2. Junction temperature (T

) should not increase beyond T

j

3. Pulse width and repetition rate should be such that the device junction temperature (T

4. Case temperature (T

) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink

C

jmax

rating.

) dose not exceed T

j

just under the chips. Refer to the figure of chip location.

5. Pulse width and repetition rate should be such as to cause negligible temperature rise.

6.
R

: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]

25

: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]

R

50

,

7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.

9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 B1 tapping screw"
The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.

jmax

rating.

Publication Date : December 2013

3