Powerex CM150RX-24S1 Data Sheet
PRELIMINARY
1 5
0
sevenpack (3φ Inverter+Chopper Brake)
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
SECTION A
GWP(12)
W(3)
EWP(11)
NTC
TH1(7)
TH2(8)
GWN(10)
EWN(9)
GVP(16)
V(2)
EVP(15)
GVP(14)
EVP(13)
GUP(20)
U(1)
EUP(19)
GUN(18)
EUN(17)
P(21)
N(22)
B(4)
GB(6)
EB(5)
< IGBT MODULES >
CM150RX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
APPLICATION
AC Motor Control, Motion/Servo Control, etc.
Collector current IC .............….......................…
Collector-emitter voltage V
Maximum junction temperature T
......................… 1 2 0 0 V
CES
.............. 1 7 5 °C
jmax
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
●Recognized under UL1557, File E323585
A
t=0.8
INTERNAL CONNECTION
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
Publication Date : December 2013
1
< IGBT MODULES >
V
Collector-emitter voltage
G-E short-circuited
1200
V
V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V
(Note2, 4)
(Note3)
P
Total power dissipation
TC=25 °C
(Note2, 4)
935
W
IE
DC
150
ERM
(Note1)
(Note3)
V
Collector-emitter voltage
G-E short-circuited
1200
V
V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
DC, TC=109 °C
(Note2, 4)
75
(Note3)
P
Total power dissipation
TC=25 °C
(Note2, 4)
480
W
V
RRM
Repetitive peak reverse voltage
G-E short-circuited
1200
V
IF
DC
(Note2)
75
I
FRM
Pulse, Repetitive
150
Symbol
Item
Conditions
Rating
Unit
T
Maximum junction temperature
Instantaneous event (overload)
175
T
Cmax
Maximum case temperature
(Note4)
125
T
jop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
I
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GES
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
GE(th)
Refer to the figure of test circuit
Tj=125 °C
-
2.00
-
Tj=150 °C
-
2.05
-
(Note5)
Tj=150 °C
-
1.95
-
C
ies
Input capacitance
- - 15
oes
QG
Gate charge
VCC=600 V, IC=150 A, VGE=15 V
-
315 - nC
t
d(on)
Turn-on delay time
- - 800
tf
Fall time - -
300
CM150RX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified )
INVERTER PART IGBT/DIODE
Symbol Item Conditions Rating Unit
CES
IC
I
Pulse, Repetitive
CRM
tot
(Note1)
I
Collector current
Emitter current
Pulse, Repetitive
DC, TC=107 °C
(Note2)
150
300
300
BRAKE PART IGBT/DIODE
Symbol Item Conditions Rating Unit
CES
I
Pulse, Repetitive
CRM
tot
Collector current
Forward current
150
(Note3)
MODULE
V
Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 4000 V
isol
jmax
T
Storage temperature - -40 ~ +125
stg
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified )
INVERTER PART IGBT/DIODE
Symbol Item Conditions
CES
Limits
Min. Typ. Max.
A
A
A
A
°C
°C
Unit
V
Gate-emitter threshold voltage IC=15 mA, VCE=10 V 5.4 6.0 6.6 V
V
CE sat
(Terminal)
Collector-emitter saturation voltage
V
CE sat
(Chip)
C
Output capacitance - - 3.0
C
Reverse transfer capacitance - - 0.25
res
tr Rise time - - 200
t
Turn-off delay time
d(off)
IC=150 A, VGE=15 V, Tj=25 °C - 1.80 2.25
V
(Note5)
IC=150 A, Tj=25 °C - 1.70 2.15
VGE=15 V, Tj=125 °C - 1.90 -
VCE=10 V, G-E short-circuited
V
nF
VCC=600 V, IC=150 A, VGE=±15 V,
ns
=0 Ω, Inductive load
R
G
- - 600
Publication Date : December 2013
2
< IGBT MODULES >
Min.
Typ.
Max.
IE=150 A, G-E short-circuited,
Tj=25 °C
-
2.60
3.40
(Note5)
IE=150 A,
Tj=25 °C
-
2.50
3.30
G-E short-circuited,
Tj=125 °C
-
2.06
-
(Note5)
(Note1)
Qrr
(Note1)
Reverse recovery charge
RG=0 Ω, Inductive load
-
4.0 - μC
Eon
Turn-on switching energy per pulse
VCC=600 V, IC=IE=150 A,
-
16.6
-
off
(Note1)
Main terminals-chip, per switch,
(Note4)
rg
Internal gate resistance
Per switch
-
13 - Ω
Limits
I
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GES
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
V
GE(th)
Gate-emitter threshold voltage
IC=7.5 mA, VCE=10 V
5.4
6.0
6.6
V
Refer to the figure of test circuit
Tj=125 °C
-
2.00
-
Tj=150 °C
-
2.05
-
IC=75 A,
Tj=25 °C
-
1.70
2.15
(Note5)
Tj=150 °C
-
1.95
-
C
ies
Input capacitance
- - 7.5
C
oes
Output capacitance
- - 1.5
QG
Gate charge
VCC=600 V, IC=75 A, VGE=15 V
-
158 - nC
t
d(on)
Turn-on delay time
- - 300
tr
Rise time
- - 200
tf
Fall time - -
300
I
RRM
Repetitive peak reverse current
VR=V
RRM
, G-E short-circuited
- - 1.0
mA
IF=75 A,
Tj=25 °C
-
2.60
3.40
(Note5)
Tj=150 °C
-
2.10
-
IF=75 A,
Tj=25 °C
-
2.50
3.30
Tj=125 °C
-
2.06
-
(Note5)
trr
Reverse recovery time
VCC=600 V, IF=75 A, VGE=±15 V,
- - 300
ns
Qrr
Reverse recovery charge
RG=8.2 Ω, Inductive load
-
2.0 - μC
Eon
Turn-on switching energy per pulse
VCC=600 V, IC=IF=75 A,
-
3.5
-
Err
Reverse recovery energy per pulse
Inductive load
-
6.5 - mJ
rg
Internal gate resistance
- - 0 - Ω
CM150RX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified )
INVERTER PART IGBT/DIODE
Symbol Item Conditions
(Note1)
VEC
(Terminal)
(Note1)
VEC
(Chip)
t
rr
Emitter-collector voltage
Reverse recovery time VCC=600 V, IE=150 A, VGE=±15 V, - - 300 ns
Refer to the figure of test circuit Tj=125 °C - 2.16 -
Tj=150 °C - 2.10 -
Tj=150 °C - 2.00 -
Limits
Unit
V
V
E
Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, Tj=150 °C, - 17.6 -
Err
Reverse recovery energy per pulse Inductive load - 10.8 - mJ
R
Internal lead resistance
CC'+EE'
TC=25 °C
- - 0.7 mΩ
BRAKE PART IGBT/DIODE
Symbol Item Conditions
CES
V
CE sat
(Terminal)
IC=75 A, VGE=15 V, Tj=25 °C - 1.80 2.25
(Note5)
Collector-emitter saturation voltage
V
CE sat
(Chip)
VGE=15 V, Tj=125 °C - 1.90 -
VCE=10 V, G-E short-circuited
C
Reverse transfer capacitance - - 0.13
res
VCC=600 V, IC=75 A, VGE=±15 V,
t
Turn-off delay time
d(off)
=8.2 Ω, Inductive load
R
G
Min. Typ. Max.
- - 600
mJ
Unit
V
V
nF
ns
V
F
(Terminal)
Forward voltage
V
F
(Chip)
E
Turn-off switching energy per pulse VGE=±15 V, RG=8.2 Ω, Tj=150 °C, - 7.3 -
off
Publication Date : December 2013
Refer to the figure of test circuit Tj=125 °C - 2.16 -
V
V
Tj=150 °C - 2.00 -
mJ
3
< IGBT MODULES >
Min.
Typ.
Max.
R25
Zero-power resistance
TC=25 °C
4.85
5.00
5.15
kΩ
100
(Note4)
(Note6)
P25
Power dissipation
TC=25 °C
(Note4)
- - 10
mW
Limits
Min.
Typ.
Max.
(Note4)
R
Junction to case, per Inverter DIODE
(Note4)
- - 0.26
R
th(j-c)Q
Junction to case, per Brake IGBT
(Note4)
- - 0.31
R
th(j-c)D
Junction to case, per Brake DIODE
(Note4)
- - 0.47
Case to heat sink, per 1 module,
Thermal grease applied
(Note4,7)
Mt
Mounting torque
Main terminals
M 5 screw
2.5
3.0
3.5
N·m
Terminal to base plate
20.1 - -
Terminal to terminal
10 - -
ec
Flatness of base plate
On the centerline X, Y
(Note8)
±0 - +100
μm
)
TT
/()
R
R
ln(B
)/(
502550
25
5025
11
−=
Y
X
+:Convex
-:Concave
+:Convex
-:Concave
mounting side
mounting side
mounting side
CM150RX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
ELECTRICAL CHARACTERISTICS (cont.; T
=25 °C, unless otherwise specified )
j
NTC THERMISTOR PART
Symbol Item Conditions
(Note4)
ΔR/R Deviation of resistance R
B
B-constant Approximate by equation
(25/50)
=493 Ω, TC=100 °C
-7.3 - +7.8 %
- 3375 - K
Limits
Unit
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
th(j-c)Q
th(j-c)D
R
Contact thermal resistance
th(c-s)
Thermal resistance
Junction to case, per Inverter IGBT
- - 0.16
- 15 - K/kW
Unit
K/W
K/W
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
ds Creepage distance
Terminal to terminal 17 - -
Limits
Min. Typ. Max.
Unit
mm
da Clearance
Terminal to base plate 14.8 - -
mm
m mass - - 370 - g
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
3. Pulse width and repetition rate should be such that the device junction temperature (T
4. Case temperature (T
) should not increase beyond T
j
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink
C
jmax
rating.
) dose not exceed T
j
jmax
rating.
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6.
R
: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
25
: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
R
50
,
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 B1 tapping screw"
The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.
Publication Date : December 2013
4
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