CM150DY-24NF
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TC MEASURED POINT
TC MEASURED POINT
(BASEPLATE)
(BASEPLATE)
A
A
F F
F F
E E
E E
G2
B
B
(2 PLACES)
(2 PLACES)
C
C
G2
E2
E2
N
N
C2E1 E2 C1
C2E1 E2 C1
L
L
PPP
PPP
V
V
D
D
LABEL
LABEL
Q Q
Q Q
E1
E1
G1
G1
K K K
K K K
G2
G2
E2
E2
C1 E2 C2E1
C1 E2 C2E1
E1
E1
G1
G1
J
J
M NUTS
M
(3 PLACES)
(3 PLACES)
T THICK
T THICK
U WIDTH
U WIDTH
S
S
R
R
G
G
H
H
G
G
Dual IGBTMOD™
NF-Series Module
150 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.70 94.0
B 1.89 48.0
C 1.14+0.04/-0.02 29.0+1.0 /-0.5
D 3.15± 0.01 80.0± 0.25
E 0.67 17.0
F 0.91 23.0
G 0.16 4.0
H 0.71 18.0
J 0.51 13.0
K 0.47 12.0
Dimensions Inches Millimeters
L 0.26 Dia. Dia. 6.5
M M5 Metric M5
N 0.79 20.0
P 0.63 16.0
Q 0.28 7.0
R 0.83 21.2
S 0.30 7.5
T 0.02 0.5
U 0.110 2.8
V 0.16 4.0
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM150DY-24NF is a 1200V
(V
), 150 Ampere Dual
CES
IGBTMOD™ Power Module.
Type Current Rating V
Amperes Volts (x 50)
CM 150 24
CES
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DY-24NF
Dual IGBTMOD™ NF-Series Module
150 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 ° C unless otherwise specified
Ratings Symbol CM150DY-24NF Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current*** (DC, TC' = 110°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25° C, Tj ≤ 150° C) P
j
stg
CES
GES
C
CM
E
EM
C
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
ISO
–40 to 150 °C
–40 to 125 °C
1200 Volts
± 20 Volts
150 A mperes
300* Amperes
150 Amperes
300* Amperes
780 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 ° C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V — — 1.0 mA
CES
, VCE = 0V — — 0.5 µA
GES
IC = 15mA, VCE = 10V 6.0 7.0 8.0 Volts
IC = 150A, VGE = 15V, Tj = 25° C—1.8 2.5 Volts
IC = 150A, VGE = 15V, Tj = 125° C—2.0 — Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
G
EC
VCC = 600V, IC = 150A, VGE = 15V — 1000 — nC
IE = 150A, VGE = 0V — — 3.2 Volts
Dynamic Electrical Characteristics, Tj = 25 ° C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Time Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteri stics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)
*** Tc' measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V — — 3 nf
VCC = 600V, IC = 150A, — — 80 ns
V
= V
GE1
= 15V, RG = 2.1Ω ,——450 ns
GE2
Inductive Load — — 350 ns
Switching Operation, — — 150 ns
IE = 150A — 7.5 — µC
rating.
j(max)
—— 3 5n f
—— 0.68 nf
——120 ns
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DY-24NF
Dual IGBTMOD™ NF-Series Module
150 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
External Gate Resistance R
QP er IGBT 1/2 Module, TC Reference — — 0.16 ° C/W
th(j-c)
Point per Outline Drawing
DP er FWDi 1/2 Module, TC Reference — — 0.25 ° C/W
th(j-c)
Point per Outline Drawing
'Q Per IGBT 1/2 Module, — — 0.093 °C/W
th(j-c)
TC Reference Point Under Chips
th(c-f)
Per 1/2 Module, Thermal Grease Applied — 0.07 — °C/W
G
2.1 — 21 Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
300
250
200
, (AMPERES)
C
150
100
VGE =
20V
12
13
15
Tj = 25
11
10
o
C
50
COLLECTOR CURRENT, I
0
024681 0
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
Tj = 25°C
= 125°C
T
j
(TYPICAL)
3
10
, (AMPERES)
E
2
10
EMITTER CURRENT, I
1
10
01 34 25
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
9
SATURATION VOLTAGE CHARACTERISTICS
4
)
3
, (VOLTS
CE(sat)
COLLECTOR-EMITTER
VGE = 15V
Tj = 25°C
= 125°C
T
j
(TYPICAL)
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
50
0
2
10
, (nF)
res
1
, C
10
oes
, C
ies
0
10
CAPACITANCE, C
-1
10
-1
10
100
COLLECTOR-CURRENT, IC, (AMPERES)
VGE = 0V
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
150
CAPACITANCE VS. V
(TYPICAL)
0
10
10
SATURATION VOLTAGE CHARACTERISTICS
10
8
, (VOLTS)
CE(sat)
6
4
COLLECTOR-EMITTER
COLLECTOR-EMITTER
(TYPICAL)
Tj = 25°C
IC = 300A
IC = 150A
IC = 60A
2
SATURATION VOLTAGE, V
0
300 200 250
CE
C
ies
C
oes
C
res
1
2
10
681 0 1 4 12 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
3
10
2
10
1
10
SWITCHING TIME, (ns)
0
10
1
10
COLLECTOR CURRENT, I
(TYPICAL)
t
d(off)
2
10
t
f
t
d(on)
t
r
VCC = 600V
V
= ±15V
GE
R
= 2.1Ω
G
T
= 125°C
j
Inductive Load
, (AMPERES)
C
3
10
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DY-24NF
Dual IGBTMOD™ NF-Series Module
150 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
3
10
VCC = 600V
V
GE
R
= 2.1Ω
2
10
1
10
10
2
10
1
10
0
10
10
G
T
= 25°C
j
Inductive Load
1
0
, (ns)
rr
REVERSE RECOVERY TIME, t
, (mJ/PULSE)
SW( off)
, E
SW( on)
SWITCHING LOSS, E
(TYPICAL)
= ±15V
2
EMITTER CURRENT, IE, (AMPERES)
GATE RESISTANCE (TYPICAL)
10
SWITCHING LOSS VS.
1
10
GATE RESISTANCE, RG, (Ω )
I
t
VCC = 600V
V
= ±15V
GE
I
= 150A
C
T
= 125°C
j
Inductive Load
C Snubber at Bus
E
SW(on)
E
SW(off)
3
10
20
16
, (AMPERES)
, (VOLTS)
rr
GE
IC = 150A
VCC = 400V
12
GATE CHARGE VS. V
2
10
8
rr
rr
10
3
10
2
10
4
GATE-EMITTER VOLTAGE, V
1
REVERSE RECOVERY CURRENT, I
0
200 400 600 1400 1000 1200 800
0
10-310
0
th(j-c')
10
-1
10
¥ (NORMALIZED VALUE)
-2
10
th
= R
th
Z
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
GATE CHARGE, QG, (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
-2
10
Single Pulse
T
= 25°C
C
Per Unit Base =
R
=
th(j-c)
0.16°C/W
(IGBT)
R
=
th(j-c)
0.25°C/W
(FWDi)
10
TIME, (s)
-1
-5
GE
VCC = 600V
0
10
-4
10
2
10
, (mJ/PULSE)
SW( off)
, E
1
10
SW( on)
SWITCHING LOSS, E
0
10
10
1
10
-1
10
-2
10
-3
10
-3
10
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
VCC = 600V
V
= ±15V
GE
R
= 2.1Ω
G
T
= 125°C
j
Inductive Load
C Snubber at Bus
1
COLLECTOR CURRENT, I
10
2
, (AMPERES)
C
E
SW(on)
E
SW(off)
3
10
4