Powerex CM150DY-12NF Data Sheet

CM150DY-12NF

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

TC MEASURED POINT
(BASEPLATE)

A

FF

EE

B

N

C2E1 E2 C1

L

(2 PLACES)

PPP

C

V

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0
B 1.89 48.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.67 17.0
F 0.91 23.0
G 0.16 4.0
H 0.71 18.0

J 0.51 13.0

K 0.47 12.0

G2
E2

E1
G1

KKK

D

QQ

LABEL

G2
E2

C1E2C2E1

E1
G1

Dimensions Inches Millimeters

L 0.26 Dia. Dia. 6.5
M M5 Metric M5
N 0.79 20.0
P 0.63 16.0
Q 0.28 7.0
R 0.83 21.2
S 0.30 7.5

T 0.02 0.5
U 0.110 2.8
V 0.16 4.0

J

M NUTS
(3 PLACES)

T THICK
U WIDTH

S

R

G

H

G

Dual IGBTMOD™
NF-Series Module

150 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ UPS
□ Battery Powered Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM150DY-12NF is a 600V (V
150 Ampere Dual IGBTMOD™
Power Module.

Type Current Rating V

CM 150 12

CE(sat)

Free-Wheel Diode
Heat Sinking

CES

CES

Amperes Volts (x 50)

),

1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150DY-12NF
Dual IGBTMOD™ NF-Series Module

150 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM150DY-12NF Units

Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V

j

stg
CES
GES

Collector Current*** (DC, TC' = 97°C) IC 150 Amperes
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P

CM

E

EM

C

Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

ISO

–40 to 150 °C
–40 to 125 °C

600 Volts
±20 Volts

300* Amperes

150 Amperes

300* Amperes

590 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

IC = 15mA, VCE = 10V 5.0 6.0 7.5 Volts

IC = 150A, VGE = 15V, Tj = 25°C—1.7 2.2 Volts

IC = 150A, VGE = 15V, Tj = 125°C—1.7 — Volts
Total Gate Charge Q
Emitter-Collector Voltage** V

G

EC

VCC = 300V, IC = 150A, VGE = 15V — 600 — nC

IE = 150A, VGE = 0V — — 2.6 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Time Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

*** Tc' measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips

ies
oes
res

d(on)

r

d(off)

f

rr

rr

VCE = 10V, VGE = 0V — — 2.8 nf

VCC = 300V, IC = 150A, — — 100 ns

V

= V

GE1

= 15V, RG = 4.2Ω,——300 ns

GE2

Inductive Load — — 300 ns

Switching Operation, — — 150 ns

IE = 150A — 2.5 — µC

rating.

j(max)

—— 23nf

—— 0.9 nf
——120 ns

2