®
CM150DX-34SA
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
A
D
H
J
K
AZ
L
AB (4 PLACES)
T
M
P
N
S
R
Q
AG
R
U
10
AF (4 PLACES)
11
1 2 3 4 5
V
W
E2
(10)
C1
(11)
X
Es2(9)
Y
G1(3)
Di2
G2(8)
Tr2
Di1
Tr1
Es1(4)
E
F
G
Y
89
AC
TH2
(2)
7
6
AW
AX
DETAIL "C"
AD
AE
AH
C
K
DETAIL "C"
DETAIL "A"
Z
Cs1(5)
Y
DETAIL "B"
C2E1
(7)
TH1
C2E1
(6)
AA AY
Th
NTC
(1)
AK
AJ
B
AM
AN
Tolerance Otherwise Specified (mm)
The tolerance of size between
terminals is assumed to ±0.4
45°
AE
AW
AL
AG
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
AT
AQ
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.98 152.0
B 2.44 62.0
C 0.67+0.04/-0.02 17.0+1.0/-0.5
D 5.39 137.0
E 4.79 121.7
F 4.33±0.02 110.0±0.5
G 3.72 94.5
H 0.60 15.14
J 0.53 13.5
K 0.31 7.75
L 1.33±0.012 33.91±0.3
M 2.28±0.012 57.95±0.3
N 1.54 39.0
P 0.87 22.0
Q 0.017±0.012 0.45±0.3
R 0.55 14.0
S 0.47 12.0
T 0.24 6.0
U 0.31 8.0
V 0.26 6.5
W 0.62 15.64
X 0.28±0.012 7.24±0.3
Y 0.15 3.81
Z 1.95±0.012 49.53±0.3
Dimensions Inches Millimeters
AA 0.9±0.012 22.86±0.3
AB 0.22 Dia. 5.5 Dia.
AC 1.97±0.02 50.0±0.5
AD 2.26 57.5
AE 0.15 3.75
AF M6 M6
AG 0.28 7.0
AH 0.14 3.5
AJ 0.03 0.8
AK 0.81 20.5
AL 0.70 17.0
AM 0.12 3.0
AN 0.65 16.5
AP 0.49 12.5
AQ 0.18 4.5
AR 0.102 Dia. 2.6 Dia.
AS 0.089 Dia. 2.25 Dia.
AT 0.05 1.2
AU 0.03 0.65
AV 0.05 1.15
AW 0.54 13.7
AX 0.52 13.0
AY 0.285 7.25
AZ 1.45±0.012 37.72±0.3
AQ
AR
AS
AP
DETAIL "A"
AV
AU
Y
DETAIL "B"
AM
Dual IGBT
NX-Series Module
150 Amperes/1700 Volts
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM150DX-34SA is a 1700V
(V
CES
Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 150 34
CE(sat)
Free-Wheel Diode
Heat Sinking
), 150 Ampere Dual IGBT
V
CES
102/14 Rev. 2
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM150DX-34SA
Dual IGBT NX-Series Module
150 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/Diode
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 125°C)
*2,*4
IC 150 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
*2,*4
P
Emitter Current (DC)*2 I
Emitter Current (Pulse, Repetitive)*3 I
1700 Volts
CES
±20 Volts
GES
300 Amperes
CRM
1500 Watts
tot
*1
150 Amperes
E
*1
300 Amperes
ERM
Module
Characteristics Symbol Rating Units
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
Maximum Junction Temperature, Instantaneous Event (Overload) T
Maximum Case Temperature*4 T
Operating Junction Temperature T
Storage Temperature T
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
j(max)
) rating.
j(max)
rating.
Tr2
Di2
Th
0
30.5
39.8
4000 Volts
ISO
175 °C
j(max)
125 °C
C(max)
-40 ~ +150 °C
j(op)
-40 ~ +125 °C
stg
34.0
27.2
26.8
25.3
0
44.7
Di1
Tr1
LABEL SIDE
76.8
89.5
Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
2
02/14 Rev. 2
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM150DX-34SA
Dual IGBT NX-Series Module
150 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Inverter Part IGBT/Diode
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal) IC = 150A, VGE = 15V, Tj = 125°C*5 — 2.2 — Volts
IC = 150A, VGE = 15V, Tj = 150°C*5 — 2.25 — Volts
Collector-Emitter Saturation Voltage V
(Chip) IC = 150A, VGE = 15V, Tj = 125°C*5 — 2.1 — Volts
IC = 150A, VGE = 15V, Tj = 150°C*5 — 2.15 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 1000V, IC = 150A, VGE = 15V — 828 — nC
Turn-on Delay Time t
Rise Time tr VCC = 1000V, IC = 150A, VGE = ±15V, — — 100 ns
Turn-off Delay Time t
Fall Time tf — — 600 ns
Emitter-Collector Voltage V
(Terminal) IE = 150A, VGE = 0V, Tj = 125°C*5 — 2.9 — Volts
IE = 150A, VGE = 0V, Tj = 150°C*5 — 2.7 — Volts
Emitter-Collector Voltage V
(Chip) IE = 150A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts
IE = 150A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts
Reverse Recovery Time t
Reverse Recovery Charge Q
Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 150A, — 26 — mJ
Turn-off Switching Energy per Pulse E
Reverse Recovery Energy per Pulse E
Internal Lead Resistance R
Per Switch,TC = 25°C
Internal Gate Resistance rg Per Switch — 3.4 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
VGE = V
GES
IC = 15mA, VCE = 10V 5.4 6 6.6 Volts
GE(th)
IC = 150A, VGE = 15V, Tj = 25°C*5 — 2.0 2.5 Volts
CE(sat)
IC = 150A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts
CE(sat)
— — 40 nF
ies
VCE = 10V, VGE = 0V — — 3.3 nF
oes
— — 0.73 nF
res
— — 400 ns
d(on)
RG = 0Ω, Inductive Load — — 700 ns
d(off)
*1
IE = 150A, VGE = 0V, Tj = 25°C*5 — 4.1 5.3 Volts
EC
*1
IE = 150A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts
EC
*1
VCC = 1000V, IE = 150A, VGE = ±15V — — 300 ns
rr
*1
RG = 0Ω, Inductive Load — 5.0 — µC
rr
VGE = ±15V, RG = 0Ω, — 46 — mJ
off
*1
Tj = 150°C, Inductive Load — 32 — mJ
rr
CC' + EE'
Main Terminals-Chip, — — 1.4 mΩ
, VGE = 0V — — 1 mA
CES
, VCE = 0V — — 0.5 µA
GES
*4
Tr2
Di2
Th
0
30.5
39.8
44.7
Di1
Tr1
LABEL SIDE
76.8
89.5
34.0
27.2
26.8
25.3
0
02/14 Rev. 2
Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
3
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM150DX-34SA
Dual IGBT NX-Series Module
150 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)
NTC Thermistor Part
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C, R
B Constant B
Approximate by Equation*6 — 3375 — K
(25/50)
= 493Ω*4 -7.3 — +7.8 %
100
Power Dissipation P25 TC = 25°C*4 — — 10 mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*4 R
Thermal Resistance, Junction to Case*4 R
Contact Thermal Resistance, R
Case to Heatsink (Per 1 Module)
Q Per Inverter IGBT — — 0.10 K/W
th(j-c)
D Per Inverter Diode — — 0.16 K/W
th(j-c)
Thermal Grease Applied — 15 — K/kW
th(c-f)
*4,*7
Mechanical Characteristics
Mounting Torque Mt Mounting to Heatsink, M5 Screw 22 27 31 in-lb
Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb
Creepage Distance ds Terminal to Terminal 17.0 — — mm
Terminal to Baseplate 18.5 — — mm
Clearance da Terminal to Terminal 10.0 — — mm
Terminal to Baseplate 16.3 — — mm
Weight m — 350 — Grams
Flatness of Baseplate ec On Centerline X, Y*8 ±0 — +10 0 µm
Recommended Operating Conditions, Ta = 25°C
(DC) Supply Voltage VCC Applied Across C1-E2 — 1000 1200 Volts
Gate (-Emitter Drive) Voltage V
External Gate Resistance RG Per Switch 0 — 47 Ω
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 B
(25/50)
R
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
= In(
R
25
)/( 1 –
50 T25 T50
1
)
Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts
GE(on)
Tr2
Di2
Th
0
30.5
39.8
44.7
Di1
Tr1
LABEL SIDE
76.8
89.5
34.0
27.2
26.8
25.3
0
Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor
– : CONCAVE
Y
MOUNTING
SIDE
X
– : CONCAVE
+ : CONVEX
+ : CONVEX
MOUNTING SIDE
MOUNTING SIDE
4
Each mark points to the center position of each chip.
02/14 Rev. 2
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM150DX-34SA
Dual IGBT NX-Series Module
150 Amperes/1700 Volts
OUTPUT CHARACTERISTICS
300
Tj =
25°
C
250
15
200
, (AMPERES)
C
150
100
50
COLLECTOR CURRENT, I
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
, (AMPERES)
E
2
10
(CHIP - TYPICAL)
VGE = 20V
(CHIP - TYPICAL)
11
10
SATURATION VOLTAGE CHARACTERISTICS
COLLECTOR-EMITTER
(CHIP - TYPICAL)
4.5
(Chip)
4.0
3.5
, (VOLTS)
3.0
CE(sat)
VGE = 15V
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
(Chip)
2.5
2.0
1.5
9
8
COLLECTOR-EMITTER
1.0
0.5
SATURATION VOLTAGE, V
0
(Chip)
, (nF)
res
, C
oes
, C
ies
10
10
0
COLLECTOR CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(TYPICAL)
2
1
CE
C
ies
300100 20050 150 250
EMITTER CURRENT, I
1
10
0 2 1 53 4 6
EMITTER-COLLECTOR VOLTAGE, V
02/14 Rev. 2
, (VOLTS)
EC
0
10
CAPACITANCE, C
VGE = 0V
-1
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
10
C
oes
C
res
0
10
1
10
2
5
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM150DX-34SA
Dual IGBT NX-Series Module
150 Amperes/1700 Volts
SWITCHING CHARACTERISTICS
4
10
t
d(off)
3
10
t
f
2
10
SWITCHING TIME, (ns)
t
r
1
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
4
10
HALF-BRIDGE
(TYPICAL)
t
d(on)
VCC = 1000V
V
GE
R
G
T
= 125°C
j
Inductive Load
2
10
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
= ±15V
= 0Ω
10
SWITCHING CHARACTERISTICS
HALF-BRIDGE
(TYPICAL)
4
10
t
d(off)
3
10
t
f
t
d(on)
2
10
SWITCHING TIME, (ns)
t
r
1
3
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
10
VCC = 1000V
V
R
T
Inductive Load
2
= ±15V
GE
= 0Ω
G
= 150°C
j
10
3
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
4
10
3
10
2
10
SWITCHING TIME, (ns)
1
10
-1
10
EXTERNAL GATE RESISTANCE, R
t
10
d(on)
0
t
d(off)
t
f
VCC = 1000V
V
GE
I
= 150A
C
T
= 125°C
j
Inductive Load
1
10
= ±15V
, (Ω)
G
t
d(off)
3
10
t
r
2
10
SWITCHING TIME, (ns)
1
10
2
10
-1
10
EXTERNAL GATE RESISTANCE, R
t
10
d(on)
0
t
f
VCC = 1000V
V
= ±15V
GE
I
= 150A
C
T
= 150°C
j
Inductive Load
1
10
G
, (Ω)
t
r
2
10
6
02/14 Rev. 2
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM150DX-34SA
Dual IGBT NX-Series Module
150 Amperes/1700 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
3
10
(ns)
rr
(A), t
rr
2
10
VCC = 1000V
V
R
T
Inductive Load
REVERSE RECOVERY, I
1
10
10
1
EMITTER CURRENT, IE, (AMPERES)
10
2
GATE CHARGE VS. V
20
IC = 150A
V
= 1000V
CC
15
, (VOLTS)
GE
= ±15V
GE
= 0Ω
G
= 125°C
j
I
rr
t
rr
GE
10
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
3
10
(ns)
rr
(A), t
rr
2
10
VCC = 1000V
V
= ±15V
GE
R
= 0Ω
G
T
= 150°C
j
Inductive Load
REVERSE RECOVERY, I
1
3
10
10
1
EMITTER CURRENT, IE, (AMPERES)
10
2
I
rr
t
rr
3
10
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
10
, (mJ)
off
, E
10
on
3
VCC = 1000V
V
GE
R
G
T
j
2
= ±15V
= 0Ω
= 125°C
10
10
2
, (mJ)
rr
1
10
5
GATE-EMITTER VOLTAGE, V
0
200 400 600 12001000800
0
GATE CHARGE, QG, (nC)
02/14 Rev. 2
1
10
SWITCHING ENERGY, E
Inductive Load Per Pulse
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
10
0
10
E
on
E
off
E
rr
2
10
REVERSE RECIVERY ENERGY, E
-1
10
3
7
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM150DX-34SA
Dual IGBT NX-Series Module
150 Amperes/1700 Volts
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
3
10
VCC = 1000V
V
= ±15V
GE
R
= 0Ω
2
1
G
T
= 150°C
j
, (mJ)
off
, E
10
on
10
SWITCHING ENERGY, E
Inductive Load Per Pulse
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
3
10
Inductive Load Per Pulse
10
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
2
10
, (mJ)
rr
1
10
0
10
E
on
E
off
E
rr
2
10
REVERSE RECIVERY ENERGY, E
-1
10
3
3
10
, (mJ)
rr
, (mJ)
off
, E
10
on
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
2
1
V
= 1000V
CC
V
= ±15V
GE
I
= 150A
C
T
= 125°C
j
Inductive Load Per Pulse
0
10
-1
10
EXTERNAL GATE RESISTANCE, RG, (Ω)
10
0
10
E
on
E
off
E
rr
1
10
2
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - MAXIMUM)
0
th(j-c')
10
, (mJ)
rr
, (mJ)
off
2
, E
10
on
1
10
VCC = 1000V
V
= ±15V
0
10
GE
I
= 150A
C
T
= 150°C
j
-1
EXTERNAL GATE RESISTANCE, RG, (Ω)
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
10
-1
10
Single Pulse
T
= 25°C
C
Per Unit Base =
R
=
• (NORMALIZED VALUE)
-2
10
th
= R
E
on
E
off
E
rr
0
10
1
10
2
th
Z
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
10
-5
10
-3
-4
10
10-210-110010
TIME, (s)
th(j-c)
0.10 K/W
(IGBT)
R
=
th(j-c)
0.16 K/W
(FWDi)
1
8
02/14 Rev. 2
®
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM150DX-34SA
Dual IGBT NX-Series Module
150 Amperes/1700 Volts
TEMPERATURE CHARACTERISTICS
(NTC THERMISTOR PART - TYPICAL)
2
10
1
10
0
10
RESISTANCE, R (kΩ)
10
-1
-50 25 50 100750-25
125
TEMPERATURE, T (°C)
02/14 Rev. 2
9
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