Powerex CM150DX-24S Data Sheet

CM150DX-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

A

Q

S

T

U

RAZ

S

T

U

Q

W

X

V

AK

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

The tolerance of size between
terminals is assumed to ±0.4

D
E
FJ J

G

L

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

47

48

12345678910111213141516171819202122

KK

M

AD

H

K

N

DETAIL "A"

C2E1(24) C2E1(23)

Tr2

G2(38)

Es2(39)

(47)

E2

DETAIL "B"

Di2

C1

(48)

P

Di1

Tr1

Cs1(22)

Es1(16)

G1(15)

24

23

TH1

(1)

AN

Y
(4 PLACES)

ZAAAB

AY

AC (4 PLACES)

AL

AM

Th

NTC

TH2

(2)

AQ

DETAIL "A"

B

AG

C

AX

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0

B 2.44 62.0

C 0.67+0.04/-0.02 17.0+1.0/-0.5

D 5.39 137.0

E 4.79 121.7

F 4.33±0.02 110.0±0.5

G 3.89 99.0

H 3.72 94.5

J 0.53 13.5

K 0.15 3.81

L 1.64 41.66

M 0.30 7.75

N 1.95 49.53

P 0.9 22.86

Q 0.55 14.0

R 0.87 22.0

S 0.67 17.0

T 0.48 12.0

U 0.24 6.0

V 0.16 4.2

W 0.37 6.5

X 0.83 21.14

Y M6 M6

Z 1.53 39.0

Dimensions Inches Millimeters

AA 1.97±0.02 50.0±0.5

AB 2.26 57.5

AC 0.22 Dia. 5.5 Dia.

AD 0.6 15.0

AE 0.51 13.0

AF 0.27 7.0

AG 0.03 0.8

AH 0.81 20.5

AJ 0.12 3.0

AK 0.14 3.5

AL 0.26 6.5

AM 0.53 13.5

AN 0.15 3.81

AP 0.05 1.15

AQ 0.025 0.65

AR 0.29 7.4

AS 0.05 1.2

AT 0.17 Dia. 4.3 Dia.

AU 0.102 Dia. 2.6 Dia.

AV 0.088 Dia. 2.25 Dia.

AW 0.12 3.0

AX 0.49 12.5

AY 0.14 3.75

AZ 2.13 54.2

AR

AS

S
AE

AJ

AH

AT
AU

AW

DETAIL "B"

Dual IGBT
NX-Series Module

150 Amperes/1200 Volts

AP

AF

Description:

Powerex IGBT Modules are
designed for use in switching

AV

applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM150DX-24S is a 1200V (V

CES

),
150 Ampere Dual IGBT Power
Module.

Type Current Rating
Amperes Volts (x 50)

CM 150 24

V

CES

105/14 Rev. 6

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM150DX-24S
Dual IGBT NX-Series Module

150 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/Diode

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 120°C)

*2,*4

IC 150 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Emitter Current (DC)*2 I

Emitter Current (Pulse, Repetitive)*3 I

1200 Volts

CES

±20 Volts

GES

300 Amperes

CRM

1150 Watts

tot

*1

150 Amperes

E

*1

300 Amperes

ERM

Module

Characteristics Symbol Rating Units

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

Maximum Junction Temperature, Instantaneous Event (Overload) T

Maximum Case Temperature*4 T

Operating Junction Temperature, Continuous Operation (Under Switching) T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

j(max)

) rating.

j(max)

rating.

2500 Volts

ISO

175 °C

j(max)

125 °C

C(max)

-40 ~ +150 °C

j(op)

-40 ~ +125 °C

stg

0 0

29.1

38.1

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

47

Di2

Tr2

Th

48

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

0

28.7

40.5

37.4

24

Di1

Tr1

23

LABEL SIDE

78.5

29.0

40.8

2

05/14 Rev. 6

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM150DX-24S
Dual IGBT NX-Series Module

150 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Inverter Part IGBT/Diode

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 150A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts

IC = 150A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 150A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts

IC = 150A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 600V, IC = 150A, VGE = 15V — 350 — nC

Turn-on Delay Time t

Rise Time tr VCC = 600V, IC = 150A, VGE = ±15V, — — 200 ns

Turn-off Delay Time t

Fall Time tf — — 300 ns

Emitter-Collector Voltage V

(Terminal) IE = 150A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts

IE = 150A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts

Emitter-Collector Voltage V

(Chip) IE = 150A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts

IE = 150A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 100A, VGE = ±15V — 24.2 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 13 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 15mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 150A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts

CE(sat)

IC = 150A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts

CE(sat)

— — 15 nF

ies

VCE = 10V, VGE = 0V — — 3.0 nF

oes

— — 0.25 nF

res

— — 800 ns

d(on)

RG = 0Ω, Inductive Load — — 600 ns

d(off)

*1

IE = 150A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts

EC

*1

IE = 150A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts

EC

*1

VCC = 600V, IE = 150A, VGE = ±15V — — 300 ns

rr

*1

RG = 0Ω, Inductive Load — 8.0 — µC

rr

RG = 0Ω, Tj = 150°C — 16.0 — mJ

off

*1

Inductive Load — 12.2 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 1.8 mΩ

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

*4

0 0

29.1

38.1

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

47

Di2

Tr2

Th

48

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

0

28.7

40.5

37.4

24

Di1

Tr1

23

LABEL SIDE

78.5

29.0

40.8

05/14 Rev. 6

3