Powerex CM150DX-24S Data Sheet

CM150DX-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

A

Q

S

T

U

RAZ

S

T

U

Q

W

X

V

AK

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

The tolerance of size between
terminals is assumed to ±0.4

D
E
FJ J

G

L

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

47

48

12345678910111213141516171819202122

KK

M

AD

H

K

N

DETAIL "A"

C2E1(24) C2E1(23)

Tr2

G2(38)

Es2(39)

(47)

E2

DETAIL "B"

Di2

C1

(48)

P

Di1

Tr1

Cs1(22)

Es1(16)

G1(15)

24

23

TH1

(1)

AN

Y
(4 PLACES)

ZAAAB

AY

AC (4 PLACES)

AL

AM

Th

NTC

TH2

(2)

AQ

DETAIL "A"

B

AG

C

AX

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0

B 2.44 62.0

C 0.67+0.04/-0.02 17.0+1.0/-0.5

D 5.39 137.0

E 4.79 121.7

F 4.33±0.02 110.0±0.5

G 3.89 99.0

H 3.72 94.5

J 0.53 13.5

K 0.15 3.81

L 1.64 41.66

M 0.30 7.75

N 1.95 49.53

P 0.9 22.86

Q 0.55 14.0

R 0.87 22.0

S 0.67 17.0

T 0.48 12.0

U 0.24 6.0

V 0.16 4.2

W 0.37 6.5

X 0.83 21.14

Y M6 M6

Z 1.53 39.0

Dimensions Inches Millimeters

AA 1.97±0.02 50.0±0.5

AB 2.26 57.5

AC 0.22 Dia. 5.5 Dia.

AD 0.6 15.0

AE 0.51 13.0

AF 0.27 7.0

AG 0.03 0.8

AH 0.81 20.5

AJ 0.12 3.0

AK 0.14 3.5

AL 0.26 6.5

AM 0.53 13.5

AN 0.15 3.81

AP 0.05 1.15

AQ 0.025 0.65

AR 0.29 7.4

AS 0.05 1.2

AT 0.17 Dia. 4.3 Dia.

AU 0.102 Dia. 2.6 Dia.

AV 0.088 Dia. 2.25 Dia.

AW 0.12 3.0

AX 0.49 12.5

AY 0.14 3.75

AZ 2.13 54.2

AR

AS

S
AE

AJ

AH

AT
AU

AW

DETAIL "B"

Dual IGBT
NX-Series Module

150 Amperes/1200 Volts

AP

AF

Description:

Powerex IGBT Modules are
designed for use in switching

AV

applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM150DX-24S is a 1200V (V

CES

),
150 Ampere Dual IGBT Power
Module.

Type Current Rating
Amperes Volts (x 50)

CM 150 24

V

CES

105/14 Rev. 6

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM150DX-24S
Dual IGBT NX-Series Module

150 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/Diode

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 120°C)

*2,*4

IC 150 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Emitter Current (DC)*2 I

Emitter Current (Pulse, Repetitive)*3 I

1200 Volts

CES

±20 Volts

GES

300 Amperes

CRM

1150 Watts

tot

*1

150 Amperes

E

*1

300 Amperes

ERM

Module

Characteristics Symbol Rating Units

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

Maximum Junction Temperature, Instantaneous Event (Overload) T

Maximum Case Temperature*4 T

Operating Junction Temperature, Continuous Operation (Under Switching) T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

j(max)

) rating.

j(max)

rating.

2500 Volts

ISO

175 °C

j(max)

125 °C

C(max)

-40 ~ +150 °C

j(op)

-40 ~ +125 °C

stg

0 0

29.1

38.1

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

47

Di2

Tr2

Th

48

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

0

28.7

40.5

37.4

24

Di1

Tr1

23

LABEL SIDE

78.5

29.0

40.8

2

05/14 Rev. 6

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM150DX-24S
Dual IGBT NX-Series Module

150 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Inverter Part IGBT/Diode

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 150A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts

IC = 150A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 150A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts

IC = 150A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 600V, IC = 150A, VGE = 15V — 350 — nC

Turn-on Delay Time t

Rise Time tr VCC = 600V, IC = 150A, VGE = ±15V, — — 200 ns

Turn-off Delay Time t

Fall Time tf — — 300 ns

Emitter-Collector Voltage V

(Terminal) IE = 150A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts

IE = 150A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts

Emitter-Collector Voltage V

(Chip) IE = 150A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts

IE = 150A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 100A, VGE = ±15V — 24.2 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 13 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 15mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 150A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts

CE(sat)

IC = 150A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts

CE(sat)

— — 15 nF

ies

VCE = 10V, VGE = 0V — — 3.0 nF

oes

— — 0.25 nF

res

— — 800 ns

d(on)

RG = 0Ω, Inductive Load — — 600 ns

d(off)

*1

IE = 150A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts

EC

*1

IE = 150A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts

EC

*1

VCC = 600V, IE = 150A, VGE = ±15V — — 300 ns

rr

*1

RG = 0Ω, Inductive Load — 8.0 — µC

rr

RG = 0Ω, Tj = 150°C — 16.0 — mJ

off

*1

Inductive Load — 12.2 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 1.8 mΩ

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

*4

0 0

29.1

38.1

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

47

Di2

Tr2

Th

48

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

0

28.7

40.5

37.4

24

Di1

Tr1

23

LABEL SIDE

78.5

29.0

40.8

05/14 Rev. 6

3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM150DX-24S
Dual IGBT NX-Series Module

150 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)

NTC Thermistor Part

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C*4, R

B Constant B

Approximate by Equation*6 — 3375 — K

(25/50)

= 493Ω -7.3 — +7.8 %

100

Power Dissipation P25 TC = 25°C*4 — — 10 mW

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case*4 R

Thermal Resistance, Junction to Case*4 R

Contact Thermal Resistance, R

Case to Heatsink*4 Per 1 Module

Q Per Inverter IGBT — — 0.13 K/W

th(j-c)

D Per Inverter FWDi — — 0.23 K/W

th(j-c)

Thermal Grease Applied, — 15 — K/kW

th(c-f)

*7

Mechanical Characteristics

Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb

Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb

Creepage Distance ds Terminal to Terminal 11.26 — — mm

Terminal to Baseplate 12.46 — — mm

Clearance da Terminal to Terminal 10.00 — — mm

Terminal to Baseplate 10.12 — — mm

Weight m — 350 — Grams

Flatness of Baseplate ec On Centerline X, Y*8 ±0 — ±100 µm

Recommended Operating Conditions, Ta = 25°C

DC Supply Voltage VCC Applied Across C1-E2 Terminals — 600 850 Volts

Gate-Emitter Drive Voltage V

G1-Es1/G2-Es2 Terminals

External Gate Resistance RG Per Switch 0 — 30 Ω

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

*6 B

(25/50)

R

R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

4

R

25

= In(

50 T25 T50

MOUNTING SIDE

MOUNTING SIDE

)/( 1 –

+ : CONVEX

1

– : CONCAVE

)

X

Y

MOUNTING

SIDE

– : CONCAVE

+ : CONVEX

Applied Across 13.5 15.0 16.5 Volts

GE(on)

0 0

29.1

38.1

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

47

Di2

Tr2

Th

48

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

0

28.7

40.5

37.4

24

Di1

Tr1

23

LABEL SIDE

78.5

29.0

40.8

05/14 Rev. 6

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM150DX-24S
Dual IGBT NX-Series Module

150 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(CHIP - TYPICAL)

300

250

200

, (AMPERES)

C

Tj =
25°

15

C

13.5

VGE = 20V

12

11

150

100

50

COLLECTOR CURRENT, I

10

9

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(CHIP - TYPICAL)

10

8

, (VOLTS)

(Chip)

Tj = 25°C

SATURATION VOLTAGE CHARACTERISTICS

3.5

VGE = 15V

3.0

Tj = 25°C
T

, (VOLTS)

CE(sat)

2.5

T

2.0

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0 300100 20050 150 250

COLLECTOR CURRENT, IC, (AMPERES)

FORWARD CHARACTERISTICS

3

10

Tj = 25°C
T
T

COLLECTOR-EMITTER

(CHIP - TYPICAL)

= 125°C

j

= 150°C

j

FREE-WHEEL DIODE

(CHIP - TYPICAL)

= 125°C

j

= 150°C

j

(Chip)

CE(sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

05/14 Rev. 6

IC = 300A

IC = 150A

IC = 60A

(Chip)

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0 1.0 0.5 2.51.5 2.0 3.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

(Chip)

5

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM150DX-24S
Dual IGBT NX-Series Module

150 Amperes/1200 Volts

2

10

, (nF)

10

res

, C

oes

, C

ies

10

10

CAPACITANCE, C

10

VGE = 0V

1

0

-1

-2

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SWITCHING CHARACTERISTICS

3

10

CAPACITANCE VS. V

(TYPICAL)

0

10

10

HALF-BRIDGE

(TYPICAL)

1

CE

C

C

C

ies

oes

res

10

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(TYPICAL)

3

10

t

t

d(on)

2

10

SWITCHING TIME, (ns)

d(off)

t

f

t

r

VCC = 600V
V
R
T

j

= ±15V

GE

= 0Ω

G

= 125°C

Inductive Load

1

2

10

1

10

COLLECTOR CURRENT, I

10

2

C

, (AMPERES)

10

3

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

3

10

t

d(off)

t

d(on)

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, I

10

t

d(off)

t

f

t

r

VCC = 600V
V
R
T
Inductive Load

2

, (AMPERES)

C

= ±15V

GE

= 0Ω

G

= 150°C

j

10

t

d(on)

t

r

t

2

10

SWITCHING TIME, (ns)

1

10

3

0

10

EXTERNAL GATE RESISTANCE, R

10

1

f

VCC = 600V
V

= ±15V

GE

I

= 150A

C

T

= 125°C

j

Inductive Load

, (Ω)

G

10

2

6

05/14 Rev. 6

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM150DX-24S
Dual IGBT NX-Series Module

150 Amperes/1200 Volts

3

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

EXTERNAL GATE RESISTANCE, RG, (Ω)

REVERSE RECOVERY CHARACTERISTICS

3

10

(ns)

rr

(A), t

rr

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

t

d(off)

t

VCC = 600V
V

GE

I

= 150A

C

T

= 150°C

j

Inductive Load

1

10

(TYPICAL)

d(on)

t

r

t

f

= ±15V

10

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

3

10

(ns)

rr

(A), t

rr

2

10

VCC = 600V
V

= ±15V

GE

R

= 0Ω

G

T

= 125°C

j

Inductive Load

REVERSE RECOVERY, I

1

10

2

10

1

EMITTER CURRENT, IE, (AMPERES)

10

2

GATE CHARGE VS. V

GE

I

rr

t

rr

3

10

20

IC = 150A
V

= 600V

CC

15

, (VOLTS)

GE

2

10

REVERSE RECOVERY, I

1

10

1

10

EMITTER CURRENT, IE, (AMPERES)

05/14 Rev. 6

10

VCC = 600V
V
R
T

j

Inductive Load

2

= ±15V

GE

= 0Ω

G

= 150°C

I

rr

t

rr

10

10

5

GATE-EMITTER VOLTAGE, V

3

0

0

100 200 300 500400

GATE CHARGE, QG, (nC)

7

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM150DX-24S
Dual IGBT NX-Series Module

150 Amperes/1200 Volts

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

2

10

, (mJ)

rr

, (mJ)

off

, E

on

10

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

10

VCC = 600V
V

= ±15V

GE

R

= 0Ω

G

T

= 125°C

j

INDUCTIVE LOAD,
PER PULSE

1

0

1

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

2

10

10

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

2

10

V

= 600V

CC

V

= ±15V

GE

R

, (mJ)

rr

, (mJ)

off

, E

on

10

E

on

E

off

E

rr

2

10

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

3

10

= 0Ω

G

T

= 150°C

j

INDUCTIVE LOAD,
PER PULSE

1

0

1

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

10

E

on

E

off

E

rr

2

10

3

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

2

10

, (mJ)

rr

, (mJ)

off

, E

on

1

10

V

= 600V

CC

V

= ±15V

GE

I

= 150A

C/IE

T

= 125°C

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

10

j

INDUCTIVE LOAD,
PER PULSE

0

-1

10

GATE RESISTANCE, RG, (Ω)

10

0

10

, (mJ)

rr

, (mJ)

off

, E

on

1

10

VCC = 600V
V

= ±15V

GE

I

= 150A

E

on

E

off

E

rr

1

10

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

2

10

C/IE

T

= 150°C

j

INDUCTIVE LOAD,
PER PULSE

0

-1

10

GATE RESISTANCE, RG, (Ω)

10

E

on

E

off

E

rr

0

10

1

10

2

8

05/14 Rev. 6

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM150DX-24S
Dual IGBT NX-Series Module

150 Amperes/1200 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(MAXIMUM)

th(j-c')

10

0

10

2

TEMPERATURE CHARACTERISTICS

(NTC THERMISTOR PART - TYPICAL)

-1

10

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

• (NORMALIZED VALUE)

-2

10

th

= R

th

Z

th(j-c)

0.13 K/W
(IGBT)
R

=

th(j-c)

0.23 K/W
(FWDi)

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

10

-5

10

-3

-4

10

10-210-110010

TIME, (s)

1

10

0

10

RESISTANCE, R (kΩ)

-1

10

1

-50 25 50 100750-25

125

TEMPERATURE, T (°C)

05/14 Rev. 6

9