CM1400DUC-24NF
A
D
P
(8 PLACES)
L
L
M
H H HHH H
K
G
U
H H
E
F
F
E2
C2
C2E1
C1
G2 E1
E2 G1
C1
V
BB
CC
B
C
J
J
G G
R (9 PLACES)
C2E1
E2
G2
E2
E1
G1
C2
Tr2
Di2
Di1
LABEL
U
W
S
N
X
Y
Z
AA
C1
C1
T
Tr1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Mega Power
Dual IGBTMOD™
1400 Amperes/1200 Volts
Description:
Powerex Mega Power Dual (MPD)
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.91 150.0
B 5.10 129.5
C 1.67±0.01 42.5±0.25
D 5.41±0.01 137.5±0.25
E 6.54 166.0
F 2.91±0.01 74.0±0.25
G 1.65 42.0
H 0.55 14.0
J 1.50±0.01 38.0±0.25
K 0.16 4.0
L 1.36 +0.04/-0.02 34.6 +1.0/-0.5
Housing Type (J.S.T. MFG. CO. LTD)
BB = VHR-2N
CC = VHR-5N
Dimensions Inches Millimeters
M 0.075±0.008 1.9±0.2
N 0.47 12.0
P 0.26 6.5
R M6 Metric M6
S 0.08 2.0
T 0.99 25.1
U 0.62 15.7
V 0.71 18.0
W 0.75 19.0
X 0.43 11.0
Y 0.83 21.0
Z 0.41 10.5
AA 0.22 5.5
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low V
£
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heatsinking
£ RoHS Compliant
Applications:
£ High Power DC Power Supply
£ Large DC Motor Drives
£ Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1400DUC-24NF
is a 1200V (V
Dual IGBTMOD Power
Module.
Current Rating V
Type Amperes Volts (x 50)
CM 1400 24
), 1400 Ampere
CES
CES
101/10 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1400DUC-24NF
Mega Power Dual IGBTMOD™
1400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Ratings Symbol CM1400DUC-24NF Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current DC (TC = 94°C)*1 I
Peak Collector Current (Pulse, Tj ≤ 150°C)*4 I
Emitter Current (TC = 25°C) I
Peak Emitter Current (Pulse)*4 I
Maximum Collector Dissipation (Tj < 150°C, TC = 25°C)*1 P
Mounting Torque, M6 Mounting Screws – 40 in-lb (max.)
Mounting Torque, M6 Main Terminal Screw – 40 in-lb (max.)
Weight (Typical) – 1450 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*1 Case temperatureTC and heatsink temperature (Tf) measured point is just under the chips.
*3 IE, IEM, VEC, I
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
, I2t, trr, Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
FSM
-40 to 125 °C
stg
1200 Volts
CES
±20 Volts
GES
1400 Amperes
C
CM
*3
1400 Amperes
E
*3
2800 Amperes
EM
8900 Watts
C
2500 Volts
iso
2800 Amperes
rating.
j(max)
2 01/10 Rev. 0