Powerex CM1200HC-66H Data Sheet
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
CM1200HC-66H
● IC ................................................................ 1200A
● V
CES ....................................................... 3300V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULA TED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
190
±0.5
171
3 - M4 NUTS
screwing depth
min. 7.7
CM
57±0.1
C
79.4
±0.3
C
E
G
E
61.5
±0.1
±0.1
57
20.25
41.25
±0.3 ±0.3
57
CC
EE
±0.2
±0.3
61.5
±0.2
13
±0.1
6 - M8 NUTS
+0.1
–0.2
20
±0.1
±0.5
±0.2
40
124
140
±0.1
8 - φ7 MOUNTING HOLES
screwing depth
min. 16.5
±0.2
5.2
+1
0
±0.15
5
+1
0
38
28
C
G
E
C
E
CIRCUIT DIAGRAM
±0.3
40
LABEL
C
E
±0.2
15
C
E
±0.5
29.5
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
V
CES
VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso
tpsc
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
GE(th)
V
IGES
VCE(sat)
Cies
Coes
Cres
Qg
VEC
td(on)
tr
Eon
td(off)
tf
Eoff
trr
Qrr
Erec
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum power dissipation
(Note 3)
VGE = 0V, Tj = 25°C
V
CE = 0V, Tj = 25°C
T
C = 100°C
Pulse (Note 1)
Pulse (Note 1)
T
C = 25°C, IGBT part
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
RMS, sinusoidal, f = 60Hz, t = 1min.
V
CC = 2200V, VCES ≤ 3300V, VGE = 15V
T
j = 125°C
Item Conditions
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
(Note 2)
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
j) should not exceed Tjmax rating (150°C).
CE = VCES, VGE = 0V, Tj = 25°C
V
I
C = 120mA, VCE = 10V, Tj = 25°C
GE = VGES, VCE = 0V, Tj = 25°C
V
I
C = 1200A, VGE = 15V, Tj = 25°C (Note 4)
I
C = 1200A, VGE = 15V, Tj = 125°C (Note 4)
V
CE = 10V, f = 100kHz
V
GE = 0V, Tj = 25°C
CC = 1650V, IC = 1200A, VGE = 15V, Tj = 25°C
V
I
E = 1200A, VGE = 0V, Tj = 25°C (Note 4)
I
E = 1200A, VGE = 0V, Tj = 125°C (Note 4)
V
CC = 1650V, IC = 1200A, VGE = ±15V
R
G(on) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
V
CC = 1650V, IC = 1200A, VGE = ±15V
R
G(off) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
V
CC = 1650V, IC = 1200A, VGE = ±15V
R
G(on) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
14700
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min Typ Max
—
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
3300
±20
1200
2400
1200
2400
6000
10
—
6.0
—
3.30
3.60
180
18.0
5.4
8.6
2.80
2.70
—
—
1.60
—
—
1.55
—
800
0.90
15
7.0
0.5
4.20
—
—
—
—
—
3.60
—
1.60
1.00
—
2.50
1.00
—
1.40
—
—
V
V
A
A
A
A
W
°C
°C
°C
V
µs
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
J/pulse
µs
µs
J/pulse
µs
µC
J/pulse
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
MECHANICAL CHARACTERISTICS
Symbol
M
CTI
d
a
ds
LC-E(int)
RC-E(int)
Mounting torque
Mass
—
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Item Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λ
Item Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
T
C = 25°C
grease = 1W/m·K
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
—
Min Typ Max
7.0
3.0
1.0
—
600
19.5
32.0
—
—
—
—
6.0
Limits
—
—
—
1.5
—
—
—
10
0.16
17.0
13.0
8.5
—
6.0
2.0
—
—
—
—
—
—
Unit
K/kW
K/kW
K/kW
Unit
N·m
kg
—
mm
mm
nH
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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