CM1200E4C-34N
A
D D
F
E
C
4 2
3
E G
C
1
B
G
H
N
T
R
4(C) 2(A)
3(E)
E
G
C
P
1(K)
Q
S
J
V
U
W
X
K (4 TYP)
M (3 TYP)
L
(6 PLACES)
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Chopper IGBTMOD™
HVIGBT Module
1200 Amperes/1700 Volts
Description:
Powerex Chopper HVIGBT
Modules are designed for use
in switching applications. Each
module consists of one IGBT
Transistor having a reverseconnected super-fast recovery
free-wheel diode and an anodecollector connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplifi ed
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.19±0.02 130.0±0.5
B 5.51±0.02 140.0±0.5
C 4.88±0.01 124.0±0.25
D 2.24±0.01 57.0±0.25
E 1.57±0.008 40.0±0.2
F 0.79±0.004 20.0±0.1
G 1.92±0.008 48.8±0.2
H 0.42±0.008 10.65±0.2
J 0.41±0.008 10.35±0.2
K M8 Metric M8
L 0.28 Dia. 7.0 Dia.
Dimensions Inches Millimeters
M M4 Metric M4
N 2.42±0.012 61.5±0.3
P 1.50+0.04/-0.0 38.0+1.0/-0.0
Q 0.2±0.008 5.0±0.2
R 0.65 Min. 16.5 Min.
S 0.30 Min. 7.7 Min.
T 0.71±0.008 18.0±0.2
U 1.16±0.02 29.5±0.5
V 0.60±0.008 15.0±0.2
W 0.21±0.008 5.2±0.2
X 1.10+0.04/-0.0 28.0+1.0/-0.0
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V
CE(sat)
£ Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1200E4C-34N is a 1700V
(V
), 1200 Ampere Chopper
CES
IGBTMOD™ Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 1200 34
V
CES
18/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM1200E4C-34N
Chopper IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM1200E4C-34N Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature T
Operating Temperature T
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, Tc = 75°C) IC 1200 Amperes
Peak Collector Current (Pulse) ICM 2400* Amperes
Emitter Current** (Tc = 25°C) IE 1200 Amperes
Emitter Surge Current** (Pulse) IEM 2400* Amperes
Maximum Collector Dissipation (Tc = 25°C, IGBT Part, T
≤ 125°C) PC 6500 Watts
j(max)
Max. Mounting Torque M8 Main Terminal Screws – 177 in-lb
Max. Mounting Torque M6 Mounting Screws – 53 in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws – 27 in-lb
Module Weight (Typical) – 0.8 kg
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) V
Maximum Turn-Off Switching Current (VCC ≤ 1200V, VGE = ±15V, Tj = 125°C) – 2400 Amperes
Short Circuit Capability, Maximum Pulse Width (VCC ≤ 1200V, VGE = ±15V, Tj = 125°C) – 10 µs
Maximum Reverse Recovery Instantaneous Power – 500 kW
(VCC ≤ 1200V, die/dt ≤ 3400A/µs, Tj = 125°C)
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
oprmax
rating (125°C).
-40 to 125 °C
stg
-40 to 125 °C
opr
1700 Volts
CES
±20 Volts
GES
4000 Volts
iso
2 8/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM1200E4C-34N
Chopper IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
VCE = V
Gate-Emitter Threshold Voltage V
Gate Leakage Current I
Collector-Emitter Saturation Voltage V
IC = 1200A, VGE = 15V, Tj = 125°C – 2.4 – Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge QG VCC = 850V, IC = 1200A, VGE = 15V – 6.8 – µC
Emitter-Collector Voltage** VEC IE = 1200A, VGE = 0V, T
IE = 1200A, VGE = 0V, Tj = 125°C – 2.3 – Volts
Forward Voltage*** VF IF = 1200A, VGE = 0V, Tj = 25°C – 2.6 – Volts
IF = 1200A, VGE = 0V, Tj = 125°C – 2.3 – Volts
Turn-On Delay Time t
Turn-On Rise Time tr V
Turn-On Switching Energy Eon Inductive Load – 380 – mJ/P
Turn-Off Delay Time t
Turn-Off Fall Time tf V
Turn-Off Switching Energy E
Reverse Recovery Time** Irr VCC = 850V, IE = 1200A, – 560 – Amperes
Reverse Recovery Time** trr die/dt = -2900A/µs, – 1.0 – µs
Reverse Recovery Charge** Qrr Tj = 125°C, – 300 – µC
Reverse Recovery Energy** E
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***The symbols represent characteristics of the clamp diode (Clamp Di).
VCE = V
CES
IC = 120mA, VCE = 10V 6.0 7.0 8.0 Volts
GE(th)
VGE = V
GES
IC = 1200A, VGE = 15V, T
CE(sat)
VCE = 10V, VGE = 0V, – 176 – nF
ies
f = 100kHz, – 9.6 – nF
oes
Tj = 25°C – 2.8 – nF
res
VCC = 850V, IC = 1200A, – 0.8 – µs
d(on)
GE1
VCC = 850V, IC = 1200A, – 1.2 – µs
d(off)
GE1
Inductive load – 360 – mJ/P
off
Inductive Load – 220 – mJ/P
rec
, VGE = 0V, Tj = 25°C – – 4.0 mA
CES
, VGE = 0V, Tj = 125°C – 3.0 8.0 mA
CES
, VCE = 0V – – 0.5 µA
GES
= 25°C – 2.15 2.80 Volts
j
= 25°C – 2.6 3.3 Volts
j
= -V
= -V
GE2
GE2
= 15V, R
= 15V, R
= 0.6Ω, – 0.4 – µs
G(on)
= 3.3Ω, – 0.3 – µs
G(off)
Thermal Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance, Case to Fin R
Q Per IGBT – – 19.0 K/kW
th(j-c)
D Per FWDi – – 42.0 K/kW
th(j-c)
D Clamp Di — — 42.0 K/kW
th(j-c)
Per Module, Thermal Grease Applied – 16.0 – K/kW
th(c-f)
Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Comparative Tracking Index CTI – 600 – – –
Clearance – – 19.5 – – mm
Creepage Distance – – 32.0 – – mm
Internal Inductance L
Internal Lead Resistance R
– – 30 – nH
C-E(int)
– – 0.28 – mΩ
C-E(int)
38/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
400
800
0
2400
0 63 541 2
COLLECTOR-EMITTER VOLTAGE, V
CE(sat)
, (VOLTS)
Tj = 25°C
1200
2000
1600
VGE = 20V
9V
10V
12V
15V
8V
0.5
1.0
1.5
0
4.0
3.5
3.0
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
0 25001500 2000500 1000 0 25001500 2000500 1000
VGE = 0V
Tj = 25°C
Tj = 125°C
2.0
2.5
COLLECTOR-EMITTER VOLTAGE, V
CES
, (VOLTS)
EMITTER CURRENT, IE, (AMPERES)
100
200
300
0
500
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
VCC = 850V
VGE = ±15V
RG = 0.6Ω
LS = 150nH
Tj = 125°C
400
0 25001500 2000500 1000
100
200
300
0
500
VCC = 850V
VGE = ±15V
RG = 0.6Ω
LS = 150nH
Tj = 125°C
400
REVERSE RECOVERY ENERGY, E
rec
, (J/PULSE)
EMITTER CURRENT, IE, (AMPERES)
100
200
0
500
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
0 1442 6 12108
VCC = 850V
VGE = ±15V
IC = 1200A
LS = 150nH
Tj = 125°C
300
400
100
200
0
500
0 1442 6 12108
VCC = 850V
VGE = ±15V
IC = 1200A
LS = 150nH
Tj = 125°C
300
400
400
800
0
2400
2000
6 1487 9 0 1500 20001000500 3000250013121110
1200
1600
REVERSE RECOVERY ENERGY, E
rec
, (J/PULSE)
GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARGE, Q
rr
, (J/PULSE)
EMITTER CURRENT, IE, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARGE, Q
rr
, (J/PULSE)
COLLECTOR CURRENT, I
C
, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
Tj = 25°C
Tj = 125°C
VCE = 20V
SWITCHING TIME, t
d(on)
, (ns)
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10
1
10
0
10
-1
COLLECTOR CURRENT,
IC, (AMPERES)
SWITCHING TIME, t
d(off)
, (ns)
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
VCC = 850V
VGE = ±15V
R
G(off)
= 3.3Ω
R
G(on)
= 0.6Ω
LS = 150nH
Tj = 125°C
0 1500 20001000500 30002500
10
1
10
0
10
-1
VCC = 850V
VGE = ±15V
R
G(off)
= 3.3Ω
R
G(on)
= 0.6Ω
LS = 150nH
Tj = 125°C
COLLECTOR CURRENT, IC, (AMPERES)
CM1200E4C-34N
Chopper IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
4 8/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, t
f
, (ns)
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, t
r
, (ns)
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
1400
600
400
200
800
1200
1000
0
25001500 20001000500
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, E
off
, (mJ/PULSE)
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
0
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, E
on
, (mJ/PULSE)
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS, E
off
, (mJ/PULSE)
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, E
on
, (mJ/PULSE)
GATE RESISTANCE, RG, (Ω)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (pF)
10
-1
10
0
10
1
10
2
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
10
3
10
1
10
0
10
2
C
ies
C
oes
C
res
VGE = 15V
f = 100kHz
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, V
CES
, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
1
10
0
10
-1
VCC = 850V
VGE = ±15V
R
G(off)
= 3.3Ω
R
G(on)
= 0.6Ω
LS = 150nH
Tj = 125°C
1400
600
400
200
800
1200
1000
0
25001500 200010005000
VCC = 850V
VGE = ±15V
R
G(off)
= 3.3Ω
R
G(on)
= 0.6Ω
LS = 150nH
Tj = 125°C
2500
2000
1500
1000
0
500
146 12108420
2500
2000
1500
1000
0
500
146 12108420
4.0
2.5
2.0
1.5
3.0
3.5
1.0
0
0.5
25001500 200010005000
VCC = 850V
VGE = ±15V
IC = 1200A
LS = 150nH
Tj = 125°C
VCC = 850V
VGE = ±15V
IC = 1200A
LS = 150nH
Tj = 125°C
10
1
10
0
10
-1
VGE = 15V
Tj = 25°C
Tj = 125°C
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
0 1500 20001000500 30002500
VCC = 850V
VGE = ±15V
R
G(off)
= 3.3Ω
R
G(on)
= 0.6Ω
LS = 150nH
Tj = 125°C
0 1500 20001000500 30002500
VCC = 850V
VGE = ±15V
R
G(off)
= 3.3Ω
R
G(on)
= 0.6Ω
LS = 150nH
Tj = 125°C
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0 2 4 6 8 1
0
16
12
8
4
0
IC = 1200A
VCC = 850V
Tj = 25°C
CM1200E4C-34N
Chopper IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
58/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
TRANSIENT IMPEDANCE, Rth
(j-c)
10
-3
10
-2
10
-1
10
0
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDI)
1.2
1.0
0.4
0
0.2
0.6
0.8
SINGLE PULSE
TC = 25°C
IGBT =
R
th(j-c)
Q =
19°K/kW
FWDI =
R
th(j-c)
D =
42°K/kW
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY
SAFE OPERATING AREA
(TYPICAL)
3000
2500
2000
1500
1000
0
500
2000150010005000
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
REVERSE BIAS
SAFE OPERATING AREA
(TYPICAL)
3000
2500
2000
1500
1000
0
500
2000150010005000
VCC ≤ 1200V
VGE = ±15V
RG ≥ 3.3Ω
Tj = 125°C
VCC ≤ 1200V
di/dt ≤ 3400A/µs
Tj = 125°C
CM1200E4C-34N
Chopper IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
6 8/05
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