Powerex CM1200DB-34N Data Sheet

CM1200DB-34N

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

A

DD

K (4 TYP)

42

B

C

3

E1

G1 G2

S

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.12±0.02 130.0±0.5

B 5.51±0.02 140.0±0.5

C 4.88±0.01 124.0±0.25

D 2.24±0.01 57.0±0.25

E 1.18±0.008 30.0±0.2

F 0.79±0.004 20.0±0.1

G 2.09±0.008 53.0±0.2

H 1.57±0.008 40.0±0.2

J 1.73±0.008 44.0±0.2

K M8 Metric M8

L 0.28 Dia. 7.0 Dia.

M M4 Metric M4

N 2.17±0.01 55.2±0.3

Z

AA

C1 C2

H

GAB

N

T

F

E

1

E2

M (3 TYP)

J

Dimensions Inches Millimeters

P 1.50+0.04/-0.0 38.0+1.0/-0.0

Q 0.2±0.008 5.0±0.2

R 0.65 Min. 16.5 Min.

S 0.30 Min. 7.7 Min.

T 0.47±0.008 11.85±0.2

U 1.16±0.02 29.5±0.5

V 0.45±0.008 11.5±0.2

W 0.55±0.008 14.0±0.2

X 1.10+0.04/-0.0 28.0+1.0/-0.0

Y 1.38±0.008 35.0±0.2

Z 0.63±0.008 16.0±0.2

AA 0.71±0.008 18.0±0.2

AB 2.24±0.008 57.0±0.2

L
(6 PLACES)

R

Q

Q

Y

V

4(E1)

E1

P

G1

C1

3(C1)

U

W

X

2(C2)

1(E2)

C2

G2

E2

Dual IGBTMOD™
HVIGBT Module

1200 Amperes/1700 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each
transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

£ Low Drive Power
£ Low V
£ Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM1200DB-34N is a 1700V
(V

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 1200 34

CE(sat)

), 1200 Ampere Dual

V

CES

12/12 Rev. 1

1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module

1200 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol CM1200DB-34N Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Operating Temperature T

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, Tc = 80°C) IC 1200 Amperes

Peak Collector Current (Pulse) ICM*1 2400 Amperes

Emitter Current (Tc = 25°C)*2 IE 1200 Amperes

Emitter Surge Current (Pulse)*2 IEM*1 2400 Amperes

Maximum Power Dissipation (Tc = 25°C, IGBT Part)*3 PC 6900 Watts

Max. Mounting Torque M8 Main Terminal Screws – 177 in-lb

Max. Mounting Torque M6 Mounting Screws – 53 in-lb

Max. Mounting Torque M4 Auxiliary Terminal Screws – 27 in-lb

Module Weight (Typical) – 1.3 kg

Isolation Voltage (RMS, Sinusoidal, f = 60Hz, t = 1 min.) V

Maximum Short Circuit Pulse Width t
(VCC = 1200V, V

*1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Junction temperature (Tj) should not exceed T

≤ 1700V, VGE = 15V, Tj = 125°C)

CES

rating (150°C).

j(max)

opr(max)

rating (125°C).

-40 to 125 °C

stg

-40 to 125 °C

opr

1700 Volts

CES

±20 Volts

GES

4000 Volts

iso

10 µs

psc

2

12/12 Rev. 1