Powerex CM100TX-24S1 Data Sheet
1 0
0
sixpack (3φ Inverter)
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
SECTION A
INTERNAL CONNECTION
GWP(9)
W(21~23)
EWP(10)
P1(16~18)
NTC
TH1(19)
TH2(20)
GWN(11)
EWN(12)
GVP(5)
V(24~26)
EVP(6)
GVP(7)
EVP(8)
GUP(1)
U(27~29)
EUP(2)
GUN(3)
EUN(4)
N1(13~15)
P(30~32)
N(33~35)
< IGBT MODULES >
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............….......................…
Collector-emitter voltage V
Maximum junction temperature T
●Flat base Typ e
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
●Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
......................… 1 2 0 0 V
CES
.............. 1 7 5 °C
jmax
A
t=0.8
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
Publication Date : December 2013
1
< IGBT MODULES >
V
Collector-emitter voltage
G-E short-circuited
1200
V V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V
(Note2, 4)
(Note3)
P
Total power dissipation
TC=25 °C
(Note2, 4)
625
W IE
DC
100
ERM
(Note1)
(Note3)
V
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
4000
V
T
j max
Maximum junction temperature
Instantaneous event (overload)
175
T
Cmax
Maximum case temperature
(Note4)
125
T
Storage temperature
-
-40 ~ +125
Min.
Typ.
Max.
I
CES
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GES
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
IC=100 A, VGE=15 V,
Tj=25 °C
-
1.80
2.25
Refer to the figure of test circuit
Tj=125 °C
-
2.00
-
(Note5)
Tj=150 °C
-
2.05
-
VGE=15 V,
Tj=125 °C
-
1.90
-
Tj=150 °C
-
1.95
-
C
ies
Input capacitance
- - 10
C
Reverse transfer capacitance
- - 0.17
QG
Gate charge
VCC=600 V, IC=100 A, VGE=15 V
-
210 - nC
t
d(on)
Turn -on delay time
- - 300
t
Turn -off delay time
- - 600
tf
Fall time - -
300
IE=100 A, G-E short-circuited,
Tj=25 °C
-
2.60
3.40
(Note5)
Tj=150 °C
-
2.10
-
IE=100 A,
Tj=25 °C
-
2.50
3.30
G-E short-circuited,
Tj=125 °C
-
2.06
-
(Note5)
t
(Note1)
Reverse recovery time
VCC=600 V, IE=100 A, VGE=±15 V,
- - 300
ns
Qrr
(Note1)
Reverse recovery charge
RG=6.2 Ω, Inductive load
-
2.7 - μC
Eon
Turn -on switching energy per pulse
VCC=600 V, IC=IE=100 A,
-
5.9
-
Err
(Note1)
Reverse recovery energy per pulse
Inductive load
-
9.7 - mJ
Main terminals-chip, per switch,
TC=25 °C
(Note4)
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions Rating Unit
CES
IC
I
Pulse, Repetitive
CRM
tot
(Note1)
I
Collector current
Emitter current
Pulse, Repetitive
DC, TC=107 °C
(Note2)
100
200
200
MODULE
Symbol Item Conditions Rating Unit
isol
T
Operating junction temperature Continuous operation (under switching) -40 ~ +150
j op
stg
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions
V
Gate-emitter threshold voltage IC=10 mA, VCE=10 V 5.4 6.0 6.6 V
GE(th)
V
CE sat
(Terminal)
V
CE sat
(Chip)
Collector-emitter saturation voltage
IC=100 A, Tj=25 °C - 1.70 2.15
(Note5)
Limits
A
A
°C
°C
Unit
V
V
C
Output capacitance - - 2.0
oes
res
tr Rise time - - 200
d(off)
(Note1)
VEC
(Terminal)
VCE=10 V, G-E short-circuited
VCC=600 V, IC=100 A, VGE=±15 V,
RG=6.2 Ω, Inductive load
Refer to the figure of test circuit Tj=125 °C - 2.16 -
nF
ns
V
Emitter-collector voltage
(Note1)
VEC
(Chip)
rr
E
Turn -off switching energy per pulse VGE=±15 V, RG=6.2 Ω, Tj=150 °C, - 9.7 -
off
R
Internal lead resistance
CC'+EE'
Tj=150 °C - 2.00 -
- - 2.2 mΩ
V
mJ
rg Internal gate resistance Per switch - 0 - Ω
Publication Date : December 2013
2
< IGBT MODULES >
Min.
Typ.
Max.
R25
Zero-power resistance
TC=25 °C
4.85
5.00
5.15
kΩ
100
(Note4)
(Note6)
P25
Power dissipation
TC=25 °C
(Note4)
- - 10
mW
Limits
Min.
Typ.
Max.
(Note4)
R
Junction to case, per Inverter DIODE
(Note4)
- - 0.37
Case to heat sink, per 1 module,
Thermal grease applied
(Note4, 7)
Limits
Terminal to terminal
16.3 - -
Terminal to base plate
15.3 - -
ec
Flatness of base plate
On the centerline X, Y
(Note8)
±0 - +100
μm
)
TT
/()
R
R
ln(B
)/(
502550
25
5025
11
−=
Y
X
+:Convex
-
:Concave
+:Convex
-:Concave
mounting side
mounting side
mounting side
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T
=25 °C, unless otherwise specified)
j
NTC THERMISTOR PART
Symbol Item Conditions
(Note4)
ΔR/R Deviation of resistance R
B
B-constant Approximate by equation
(25/50)
=493 Ω, TC=100 °C
-7.3 - +7.8 %
- 3375 - K
Limits
Unit
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
R
th(j- c)Q
th(j- c)D
Contact thermal resistance
th(c- s)
Thermal resistance
Junction to case, per Inverter IGBT
- - 0.24
- 15 - K/kW
Unit
K/W
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Min. Typ. Max.
Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
m mass - - 330 - g
ds Creepage distance
da Clearance
Terminal to base plate 19.1 - -
Terminal to terminal 10.3 - -
Unit
mm
mm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
) should not increase beyond T
j
3. Pulse width and repetition rate should be such that the device junction temperature (T
4. Case temperature (T
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink
C
jmax
rating.
) dose not exceed T
j
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6.
R
: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
25
: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
R
50
,
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 B1 tapping screw"
The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.
jmax
rating.
Publication Date : December 2013
3
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