1 0
0
sixpack (3φ Inverter)
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
SECTION A
INTERNAL CONNECTION
GWP(9)
W(21~23)
EWP(10)
P1(16~18)
NTC
TH1(19)
TH2(20)
GWN(11)
EWN(12)
GVP(5)
V(24~26)
EVP(6)
GVP(7)
EVP(8)
GUP(1)
U(27~29)
EUP(2)
GUN(3)
EUN(4)
N1(13~15)
P(30~32)
N(33~35)
< IGBT MODULES >
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............….......................…
Collector-emitter voltage V
Maximum junction temperature T
●Flat base Typ e
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
●Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
......................… 1 2 0 0 V
CES
.............. 1 7 5 °C
jmax
A
t=0.8
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
Publication Date : December 2013
1
< IGBT MODULES >
V
Collector-emitter voltage
G-E short-circuited
1200
V V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V
(Note2, 4)
(Note3)
P
Total power dissipation
TC=25 °C
(Note2, 4)
625
W IE
DC
100
ERM
(Note1)
(Note3)
V
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
4000
V
T
j max
Maximum junction temperature
Instantaneous event (overload)
175
T
Cmax
Maximum case temperature
(Note4)
125
T
Storage temperature
-
-40 ~ +125
Min.
Typ.
Max.
I
CES
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GES
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
IC=100 A, VGE=15 V,
Tj=25 °C
-
1.80
2.25
Refer to the figure of test circuit
Tj=125 °C
-
2.00
-
(Note5)
Tj=150 °C
-
2.05
-
VGE=15 V,
Tj=125 °C
-
1.90
-
Tj=150 °C
-
1.95
-
C
ies
Input capacitance
- - 10
C
Reverse transfer capacitance
- - 0.17
QG
Gate charge
VCC=600 V, IC=100 A, VGE=15 V
-
210 - nC
t
d(on)
Turn -on delay time
- - 300
t
Turn -off delay time
- - 600
tf
Fall time - -
300
IE=100 A, G-E short-circuited,
Tj=25 °C
-
2.60
3.40
(Note5)
Tj=150 °C
-
2.10
-
IE=100 A,
Tj=25 °C
-
2.50
3.30
G-E short-circuited,
Tj=125 °C
-
2.06
-
(Note5)
t
(Note1)
Reverse recovery time
VCC=600 V, IE=100 A, VGE=±15 V,
- - 300
ns
Qrr
(Note1)
Reverse recovery charge
RG=6.2 Ω, Inductive load
-
2.7 - μC
Eon
Turn -on switching energy per pulse
VCC=600 V, IC=IE=100 A,
-
5.9
-
Err
(Note1)
Reverse recovery energy per pulse
Inductive load
-
9.7 - mJ
Main terminals-chip, per switch,
TC=25 °C
(Note4)
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions Rating Unit
CES
IC
I
Pulse, Repetitive
CRM
tot
(Note1)
I
Collector current
Emitter current
Pulse, Repetitive
DC, TC=107 °C
(Note2)
100
200
200
MODULE
Symbol Item Conditions Rating Unit
isol
T
Operating junction temperature Continuous operation (under switching) -40 ~ +150
j op
stg
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions
V
Gate-emitter threshold voltage IC=10 mA, VCE=10 V 5.4 6.0 6.6 V
GE(th)
V
CE sat
(Terminal)
V
CE sat
(Chip)
Collector-emitter saturation voltage
IC=100 A, Tj=25 °C - 1.70 2.15
(Note5)
Limits
A
A
°C
°C
Unit
V
V
C
Output capacitance - - 2.0
oes
res
tr Rise time - - 200
d(off)
(Note1)
VEC
(Terminal)
VCE=10 V, G-E short-circuited
VCC=600 V, IC=100 A, VGE=±15 V,
RG=6.2 Ω, Inductive load
Refer to the figure of test circuit Tj=125 °C - 2.16 -
nF
ns
V
Emitter-collector voltage
(Note1)
VEC
(Chip)
rr
E
Turn -off switching energy per pulse VGE=±15 V, RG=6.2 Ω, Tj=150 °C, - 9.7 -
off
R
Internal lead resistance
CC'+EE'
Tj=150 °C - 2.00 -
- - 2.2 mΩ
V
mJ
rg Internal gate resistance Per switch - 0 - Ω
Publication Date : December 2013
2
< IGBT MODULES >
Min.
Typ.
Max.
R25
Zero-power resistance
TC=25 °C
4.85
5.00
5.15
kΩ
100
(Note4)
(Note6)
P25
Power dissipation
TC=25 °C
(Note4)
- - 10
mW
Limits
Min.
Typ.
Max.
(Note4)
R
Junction to case, per Inverter DIODE
(Note4)
- - 0.37
Case to heat sink, per 1 module,
Thermal grease applied
(Note4, 7)
Limits
Terminal to terminal
16.3 - -
Terminal to base plate
15.3 - -
ec
Flatness of base plate
On the centerline X, Y
(Note8)
±0 - +100
μm
)
TT
/()
R
R
ln(B
)/(
502550
25
5025
11
−=
Y
X
+:Convex
-
:Concave
+:Convex
-:Concave
mounting side
mounting side
mounting side
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T
=25 °C, unless otherwise specified)
j
NTC THERMISTOR PART
Symbol Item Conditions
(Note4)
ΔR/R Deviation of resistance R
B
B-constant Approximate by equation
(25/50)
=493 Ω, TC=100 °C
-7.3 - +7.8 %
- 3375 - K
Limits
Unit
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
R
th(j- c)Q
th(j- c)D
Contact thermal resistance
th(c- s)
Thermal resistance
Junction to case, per Inverter IGBT
- - 0.24
- 15 - K/kW
Unit
K/W
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Min. Typ. Max.
Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
m mass - - 330 - g
ds Creepage distance
da Clearance
Terminal to base plate 19.1 - -
Terminal to terminal 10.3 - -
Unit
mm
mm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
) should not increase beyond T
j
3. Pulse width and repetition rate should be such that the device junction temperature (T
4. Case temperature (T
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink
C
jmax
rating.
) dose not exceed T
j
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6.
R
: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
25
: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
R
50
,
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 B1 tapping screw"
The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.
jmax
rating.
Publication Date : December 2013
3
< IGBT MODULES >
Limits
Min.
Typ.
Max.
Applied across
RG
External gate resistance
Per switch
6.2 - 62
Ω
CHIP LOCATION (Top vi e w )
Dimension in mm, tolerance: ±1 mm
Tr*P/Tr*N: IGBT, Di*P/Di*N: DIODE (*=U/V/W), Th: NTC thermistor
VCC
-VGE
+VGE
-VGE
+
vCE
vGE
0
iE
iC
P
N
*
G*P
E*P
G*N
E*N
Load
RG
*: U, V, W
N1
P1
～
t
tf
tr
t
d(on)
iC
10%
90 %
90 %
vGE
～
～
～
0 V
0 A
0
t
d(off)
t
Irr
Qrr=0.5×Irr×trr
0.5×Irr
t
trr
iE
0 A
IE
0.1×ICM
ICM
VCC
vCE
iC
t
0
ti
0.1×VCC
0.1×VCC
VCC
ICM
vCE
iC t 0
0.02×ICM
ti
IEM
vEC
iE
t
0 V
ti
t
VCC
0 A
IGBT Turn-on switching energy
IGBT Turn-off switching energy
DIODE Reverse recovery energy
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol Item Conditions
Unit
VCC (DC) Supply voltage Applied across P-N/P1-N1 terminals - 600 850 V
V
Gate (-emitter drive) voltage
GEon
G*P-E*P/G*N-E*N(*=U, V, W) terminals
13.5 15.0 16.5 V
TEST CIRCUIT AND WAVEFORMS
Switching characteristics test circuit and waveforms trr, Qrr characteristics test waveform
Tur n -on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : December 2013
4
< IGBT MODULES >
V
Short-
circuited
30~32
27~29
33~35
IC
1
2
3
4
VGE=15V
16~18
13~15
V
Short-
circuited
30~32
24~26
33~35
IC
5
6
7
8
VGE=15V
16~18
13~15
V
Short-
circuited
30~32
21~23
33~35
IC
9
10
11
12
VGE=15V
16~18
13~15
V
Short-
circuited
30~32
27~29
33~35
IC
1
2
3
4
VGE=15V
16~18
13~15
V
Short-
circuited
30~32
24~26
33~35
IC
5
6
7
8
VGE=15V
16~18
13~15
V
Short-
circuited
30~32
21~23
33~35
IC
9
10
11
12
VGE=15V
16~18
13~15
Gate-emitter
short-circuited
GVP-EVP GVN-EVN,
GWP-EWP, GWN-EWN
Gate-emitter
short-circuited
GUP-EUP, GUN-EUN,
GWP-EWP, GWN-EWN
Gate-emitter
short-circuited
GUP-EUP, GUN-EUN,
GVP-EVP, GVN-EVN
UP / UN IGBT
VP / VN IGBT
WP / WN IGBT
V
Short-
circuited
30~32
27~29
33~35
IE
1
2
3
4
16~18
13~15
Short-
circuited
V
Short-
circuited
30~32
24~25
33~35
IE
5
6
7
8
16~18
13~15
Short-
circuited
V
Short-
circuited
30~32
21~23
33~35
IE
9
10
11
12
16~18
13~15
Short-
circuited
V
Short-
circuited
30~32
27~29
33~35
IE
1
2
3
4
16~18
13~15
Short-
circuited
V
Short-
circuited
30~32
24~26
33~35
IE
5
6
7
8
16~18
13~15
Short-
circuited
V
Short-
circuited
30~32
21~23
33~35
IE
9
10
11
12
16~18
13~15
Short-
circuited
Gate-emitter
short-circuited
GVP-EVP GVN-EVN,
GWP-EWP, GWN-EWN
Gate-emitter
short-circuited
GUP-EUP, GUN-EUN,
GWP-EWP, GWN-EWN
Gate-emitter
short-circuited
GUP-EUP, GUN-EUN,
GVP-EVP, GVN-EVN
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
V
characteristics test circuit
CEsat
Publication Date : December 2013
UP / UN DIODE VP / VN DIODE WP / WN DIODE
VEC characteristics test circuit
5
< IGBT MODULES >
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
(TYPICAL)
Tj=25 °C
(Chip)
VGE=15 V
(Chip)
COLLECTOR CURRENT I
(A)
0
50
100
150
200
0 2 4 6 8 10
0
0.5
1
1.5
2
2.5
3
3.5
0 50 100 150 200
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VO LTAGE
(TYPICAL)
FREE WHEELING DIODE
(TYPICAL)
Tj=25 °C
(Chip)
G-E short-circuited
(Chip)
COLLECTOR-EMITTER SATURATION VOLTAGE V
(V)
0
2
4
6
8
10
6 8 10 12 14 16 18 20
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4
GATE -EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
IC=200 A
IC=100 A
IC=40 A
Tj=125 °C
Tj=150 °C
°C
°C
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
C
VGE=20 V
OUTPUT CHARACTERISTICS
15 V
12 V
11 V
10 V
9 V
CHARACTERISTICS
(V)
CEsat
Tj=150
Tj=125
Tj=25 °C
COLLECTOR-EMITTER SATURATION VOLTAGE V
CHARACTERISTICS
CEsat
(A)
E
EMITTER CURRENT I
FORWARD CHARACTERISTICS
Tj=25 °C
Publication Date : December 2013
6
< IGBT MODULES >
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
SWITCHING TIME (ns)
1
10
100
1000
10 100 1000
10
100
1000
1 10 100
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=6.2 Ω,
VCC=600 V, VGE=±15 V, IC/IE=100 A,
SWITCHING ENERGY (mJ)
0.1
1
10
10 100 1000
1
10
100
REVERSE RECOVERY ENERGY (mJ)
1
10
100
1 10 100
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
EXTERNAL GATE RESISTANCE RG (Ω)
t
d(on)
tr
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
SWITCHING CHARACTERISTICS
VCC=600 V, VGE=±15 V, RG=6.2 Ω, INDUCTIVE LOAD
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
t
d(off)
tf
t
d(on)
tr
SWITCHING CHARACTERISTICS
VCC=600 V, VGE=±15 V, IC=100 A, INDUCTIVE LOAD
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
SWITCHING TIME (ns)
t
d(off)
tf
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
E
off
Eon
Err
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
Eon
E
off
Err
Publication Date : December 2013
7
< IGBT MODULES >
(TYPICAL)
FREE WHEELING DIODE
(TYPICAL)
CAPACITANCE (nF)
0.01
0.1
1
10
100
0.1 1 10 100
10
100
1000
10 100 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER CURRENT IE (A)
(TYPICAL)
(MAXIMUM)
0
5
10
15
20
0 50 100 150 200 250 300
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
GATE C H A R G E QG (nC)
TIME (S)
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
CAPACITANCE CHARACTERISTICS
G-E short-circuited, Tj=25 °C
REVERSE RECOVERY CHARACTERISTICS
VCC=600 V, VGE=±15 V, RG=6.2 Ω, INDUCTIVE LOAD
---------------: T
C
ies
(A)
rr
C
oes
(ns), I
rr
t
C
res
=150 °C, - - - - -: Tj=125 °C
j
Irr
trr
GATE C H A R G E CHARACTERISTICS
VCC=600 V, IC=100 A, Tj=25 °C
(V)
GE
GAT E-EMITTER VOLTAGE V
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
Single pulse, TC=25 °C
R
th(j- c)Q
=0.24 K/W, R
th(j- c)D
=0.37 K/W
th(j- c)
Publication Date : December 2013
NORMALIZED TRANSIENT THERMAL RESISTANCE Z
8
< IGBT MODULES >
(TYPICAL)
RESISTANCE R (kΩ)
0.1
1
10
100
-50 -25 0 25 50 75 100 125
TEMPERATURE T (°C)
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
NTC thermistor part
TEMPERATURE CHARACTERISTICS
Publication Date : December 2013
9
< IGBT MODULES >
CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
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•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of
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© 2013 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : December 2013
10
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