Powerex CM100TX-24S Data Sheet

CM100TX-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

AE

AC

A
E

F

G

K

K

JMMM T

52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

H

L

X

53

54

K

55

K

56

57

58

59

K

60

K

61

12345678910111213141516171819202122

LLLLL

P(54~56)

UP(1)

G

E

UP(2)

U(48~50) V(42~44) W(36~38)

G

UN(5)

N(59~61)

K

K

D

DETAIL "A"

KQ

DETAIL "B"

VP(9)

G

E

VP(10)

G

VN(13)

K

K

K

K

KKKKKK

U

Y

K

K

G

E

G

EWN(22)EVN(14)EUN(6)

H

30

29

28

27

26

25

24

23

W

WP(17)

WP(18)

WN(21)

V

S

R B

L

N (4 PLACES)

P

P1(28~30)

N1(23~25)

TH1
(31)

AA

AB

K

AD

DETAIL "A"

C

Z

AJ

AH

AG

DETAIL "B"

TH

2

(32)

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.79 121.7
B 2.44 62.0
C 0.51 13.0
D 4.65 118.1
E 4.33±0.02 110.0±0.5
F 3.9 99.0
G 3.72 94.5
H 0.61 15.415
J 1.125 28.575
K 0.15 3.81
L 0.45 11.43
M 0.6 15.24
N 0.22 Dia. 5.5 Dia.
P 2.30 58.4
Q 0.21 5.34
R 1.97±0.02 50.0±0.5
S 2.26 57.5

Dimensions Inches Millimeters

U 0.285 7.245
V 0.018 0.45
W 0.625 15.865
X 0.14 3.5
Y 0.03 0.8
Z 0.28 7.0
AA 0.81 20.5
AB 0.67 17.0
AC 0.03 0.65
AD 0.05 1.15
AE 0.29 7.4
AF 0.05 6.2
AG 0.49 12.5
AH 0.06 1.5
AJ 0.17 Dia. 4.3 Dia.
AK 0.10 Dia. 2.5 Dia.
AL 0.08 Dia. 2.1 Dia.

T 0.465 11.805

Six IGBTMOD™
NX-S Series Module

100 Amperes/1200 Volts

AF

AK
AL

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration,
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM100TX-24S is a 1200V (V
100 Ampere Six-IGBTMOD™ Pow­er Module.

Type Current Rating
Amperes Volts (x 50)

CM 100 24

),

CES

V

CES

110/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100TX-24S
Six IGBTMOD™ NX-S Series Module

100 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol CM100TX-24S Units

Maximum Junction Temperature T

Operating Power Device Junction Temperature T

Storage Temperature T

+175 °C

j(max)

-40 to 150 °C

j(op)

-40 to 125 °C

stg

Mounting Torque, M5 Mounting Screws — 31 in-lb

Module Weight (Typical) — 270 Grams

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V

2500 V

ISO

rms

Inverter Sector

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 118°C)

*1,*5

IC 100 Amperes

Collector Current (Pulse)*4 I

Total Power Dissipation (TC = 25°C)

Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)

*1,*5

P

*1,*5

I

Emitter Current, Free Wheeling Diode Forward Current (Pulse)*4 I

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*5 Junction temperature (Tj) should not increase beyond maximum junction temperature (T

j(max)

) rating.

j(max)

rating.

1200 Volts

CES

±20 Volts

GES

200 Amperes

CRM

750 Watts

tot

*3

100 Amperes

E

*3

200 Amperes

ERM

2 10/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100TX-24S
Six IGBTMOD™ NX-S Series Module

100 Amperes/1200 Volts

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Inverter Sector

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Chip) IC = 100A, VGE = 15V, Tj = 125°C — 1.9 — Volts

IC = 100A, VGE = 15V, Tj = 150°C — 1.95 — Volts

Collector-Emitter Saturation Voltage V

(Terminal) IC = 100A, VGE = 15V, Tj = 125°C*6 — 2.0 — Volts

IC = 100A, VGE = 15V, Tj = 150°C*6 — 2.05 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V — 233 — nC

Inductive Turn-on Delay Time t

Load Turn-on Rise Time tr VCC = 600V, IC = 100A, *7 — — 200 ns

Switch Turn-off Delay Time t

Time Turn-off Fall Time tf RG = 27Ω, Inductive Load, — — 300 ns

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Loss per Pulse Eon VCC = 600V, IC (IE) = 100A, *7 — 16.7 — mJ

Turn-off Switching Loss per Pulse E

Reverse Recovery Loss per Pulse E

Emitter-Collector Voltage V

(Chip) IE = 100A, VGE = 0V, Tj = 125°C — 1.7 — Volts

IE = 100A, VGE = 0V, Tj = 150°C — 1.7 — Volts

Emitter-Collector Voltage V

(Terminal) IE = 100A, VGE = 0V, Tj = 125°C*6 — 1.8 — Volts

IE = 100A, VGE = 0V, Tj = 150°C*6 — 1.8 — Volts

VCE = V

CES

±VGE = V

GES

IC = 10mA, VCE = 10V 5.4 6 6.6 Volts

GE(th)

IC = 100A, VGE = 15V, Tj = 25°C — 1.7 2.15 Volts

CE(sat)

IC = 100A, VGE = 15V, Tj = 25°C*6 — 1.8 2.25 Volts

CE(sat)

— — 10 nF

ies

VGE = 0V, VCE = 10V — — 2 nF

oes

— — 0.17 nF

res

— — 300 ns

d(on)

VGE = ±15V, — — 600 ns

d(off)

*3

IE = 100A — — 300 ns

rr

*3

— 5.3 — µC

rr

VGE = ±15V, RG = 27Ω, — 10.7 — mJ

off

*3

Tj = 150°C, Inductive Load — 6.0 — mJ

rec

*3

IE = 100A, VGE = 0V, Tj = 25°C — 1.7 2.15 Volts

EC

*3

IE = 100A, VGE = 0V, Tj = 25°C*6 — 1.8 2.25 Volts

EC

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 0.5 µA

GES

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case*1 R

Thermal Resistance, Junction to Case*1 R

Internal Gate Resistance rg Per Switch — 0 — Ω

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Recommended maximum collector supply voltage VCC is 800Vdc.

Q Per IGBT — — 0.2 K/W

th(j-c)

D Per FWDi — — 0.29 K/W

th(j-c)

310/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100TX-24S
Six IGBTMOD™ NX-S Series Module

100 Amperes/1200 Volts

NTC Thermistor Sector, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R TC = 25°C 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C, R

B Constant B

Approximate by Equation*9 — 3375 — K

(25/50)

= 493Ω –7.3 — +7.8 %

100

Power Dissipation P25 TC = 25°C — — 10 mW

Module, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Lead Resistance (Main Terminals-Chip) R

Contact Thermal Resistance*1 R

(Case to Heatsink) (Per 1 Module)

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

*9 B

(25/50)

R
T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K]

= In(

R

25

)/( 1 –

50 T25 T50

1

) R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50 [K],

TC = 25°C (Per Switch) — — 2.2 mΩ

lead

Thermal Grease Applied — 0.015 — K/W

th(c-f)

*2

4 10/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100TX-24S
Six IGBTMOD™ NX-S Series Module

100 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(INVERTER PART - CHIP - TYPICAL)

200

150

, (AMPERES)

C

100

Tj =
25°

C

15

VGE = 20V

13.5

50

COLLECTOR CURRENT, I

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(INVERTER PART - CHIP - TYPICAL)

3

10

10

, (AMPERES)

E

10

EMITTER CURRENT, I

10

10

10

Tj = 25°C

= 125°C

T

j

= 150°C

T

2

1

0

3

2

j

0 1.0 0.5 2.51.5 2.0 3.0

EMITTER-COLLECTOR VOLTAGE, V

SWITCHING TIME VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

t

f

t

d(off)

12

11

10

9

, (VOLTS)

EC

SATURATION VOLTAGE CHARACTERISTICS

3.5

3.0

, (VOLTS)

2.5

CE(sat)

2.0

COLLECTOR-EMITTER

(INVERTER PART - CHIP - TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

= 150°C

T

j

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(INVERTER PART - TYPICAL)

2

10

VGE = 0V

, (nF)

1

10

res

, C

oes

, C

ies

0

10

-1

10

CAPACITANCE, C

-2

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

(ns)

rr

(A), t

rr

2

10

0

10

(INVERTER PART - TYPICAL)

CE

C

ies

C

oes

C

res

1

10

VCC = 600V
V

= ±15V

GE

R

= 27Ω

G

T

= 150°C

j

Inductive Load

I

rr

t

rr

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

4

COLLECTOR-EMITTER

COLLECTOR-EMITTER

(INVERTER PART - CHIP - TYPICAL)

Tj = 25°C

IC = 200A

IC = 100A

IC = 40A

2

SATURATION VOLTAGE, V

0

20010050 150

2

10

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(INVERTER PART - TYPICAL)

3

10

t

d(off)

t

f

t

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

20

IC = 100A
V

= 600V

CC

15

, (VOLTS)

GE

GATE CHARGE VS. V

d(on)

t

r

2

10

(INVERTER PART)

VCC = 600V
V

= ±15V

GE

R

= 27Ω

G

T

= 150°C

j

Inductive Load

GE

3

10

10

SWITCHING TIME, (ns)

1

10

0

10

t

d(on)

t

r

1

10

GATE RESISTANCE, R

VCC = 600V
V

= ±15V

GE

I

= 100A

C

T

= 150°C

j

Inductive Load

, (Ω)

G

2

10

REVERSE RECOVERY, I

1

10

1

10

EMITTER CURRENT, IE, (AMPERES)

5

GATE-EMITTER VOLTAGE, V

2

10

3

10

0

100 200 300 400

0

GATE CHARGE, QG, (nC)

510/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100TX-24S
Six IGBTMOD™ NX-S Series Module

100 Amperes/1200 Volts

SWITCHING LOSS VS.

COLLECTOR CURRENT

(INVERTER PART - TYPICAL)

2

10

, (mJ/PULSE)

off

, E

on

1

10

VCC = 600V
V
R
T
L
Inductive Load

SWITCHING LOSS, E

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

REVERSE RECOVERY SWITCHING LOSS VS.

2

10

, (mJ/PULSE)

rr

1

10

REVERSE RECOVERY

SWITCHING LOSS, E

0

10

10

GATE RESISTANCE

(INVERTER PART - TYPICAL)

VCC = 600V
V

= ±15V

GE

I

= 100A

C

T

= 150°C

j

L

= 50nH

s

Inductive Load

0

GATE RESISTANCE, R

2

10

E

rr

1

10

= ±15V

GE

= 27Ω

G

= 150°C

j

= 50nH

s

E
E

, (Ω)

G

SWITCHING LOSS VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

2

10

VCC = 600V
V

= ±15V

GE

I

= 100A

C

T

= 150°C

j

L

= 50nH

, (mJ/PULSE)

off

, E

on

on

off

SWITCHING LOSS, E

3

10

th(j-c')

2

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

10

s

Inductive Load

1

10

0

10

0

10

10

0

10

-1

10

• (NORMALIZED VALUE)

-2

10

th

= R

th

Z

-3

10

GATE RESISTANCE, RG, (Ω)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(INVERTER vvPART - TYPICAL)

-3

-2

10

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

th(j-c)

0.20°C/W
(IGBT)
R

=

th(j-c)

0.29°C/W
(FWDi)

1

10

-1

10

-5

10

TIME, (s)

E

on

E

off

2

10

0

10

-4

10

1

10

-1

10

-2

10

-3

10

-3

10

REVERSE RECOVERY SWITCHING LOSS VS.

2

10

, (mJ/PULSE)

rr

1

10

REVERSE RECOVERY

SWITCHING LOSS, E

0

10

10

EMITTER CURRENT

(INVERTER PART - TYPICAL)

VCC = 600V
V

= ±15V

GE

R

= 27Ω

G

T

= 150°C

j

L

= 50nH

s

Inductive Load

E

rr

1

EMITTER CURRENT, IE, (AMPERES)

2

10

3

10

6 10/10 Rev. 1