PRELIMINARY
1 0
0
sevenpack (3φ Inverter+Chopper Brake)
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
SECTION A
GWP(12)
W(3)
EWP(11)
NTC
TH1(7)
TH2(8)
GWN(10)
EWN(9)
GVP(16)
V(2)
EVP(15)
GVP(14)
EVP(13)
GUP(20)
U(1)
EUP(19)
GUN(18)
EUN(17)
P(21)
N(22)
B(4)
GB(6)
EB(5)
< IGBT MODULES >
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
APPLICATION
AC Motor Control, Motion/Servo Control, etc.
Collector current IC .............….......................…
Collector-emitter voltage V
Maximum junction temperature T
......................… 1 2 0 0 V
CES
.............. 1 7 5 °C
jmax
●Flat base Typ e
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
●Recognized under UL1557, File E323585
A
t=0.8
INTERNAL CONNECTION
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
Publication Date : December 2013
1
< IGBT MODULES >
V
Collector-emitter voltage
G-E short-circuited
1200
V V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V
(Note2, 4)
(Note3)
P
Total power dissipation
TC=25 °C
(Note2, 4)
625
W IE
DC
100
ERM
(Note1)
(Note3)
V
Collector-emitter voltage
G-E short-circuited
1200
V
V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
DC, TC=113 °C
(Note2, 4)
50
(Note3)
P
Total power dissipation
TC=25 °C
(Note2, 4)
340
W
V
RRM
Repetitive peak reverse voltage
G-E short-circuited
1200
V
IF
DC
(Note2)
50
I
FRM
Pulse, Repetitive
100
Symbol
Item
Conditions
Rating
Unit
T
Maximum junction temperature
Instantaneous event (overload)
175
T
Cmax
Maximum case temperature
(Note4)
125
T
j op
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
I
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GES
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
GE(th)
Refer to the figure of test circuit
Tj=125 °C
-
2.00
-
Tj=150 °C
-
2.05
-
(Note5)
Tj=150 °C
-
1.95
-
C
ies
Input capacitance
- - 10
oes
QG
Gate charge
VCC=600 V, IC=100 A, VGE=15 V
-
210 - nC
t
d(on)
Turn -on delay time
- - 300
tf
Fall time - -
300
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions Rating Unit
CES
IC
I
Pulse, Repetitive
CRM
tot
(Note1)
I
Collector current
Emitter current
Pulse, Repetitive
DC, TC=107 °C
(Note2)
100
200
200
BRAKE PART IGBT/DIODE
Symbol Item Conditions Rating Unit
CES
I
Pulse, Repetitive
CRM
tot
Collector current
Forward current
100
(Note3)
MODULE
V
Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 4000 V
isol
j max
T
Storage temperature - -40 ~ +125
stg
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions
CES
Limits
Min. Typ. Max.
A
A
A
A
°C
°C
Unit
V
Gate-emitter threshold voltage IC=10 mA, VCE=10 V 5.4 6.0 6.6 V
V
CE sat
(Terminal)
Collector-emitter saturation voltage
V
CE sat
(Chip)
C
Output capacitance - - 2.0
C
Reverse transfer capacitance - - 0.17
res
tr Rise time - - 200
t
Turn -off delay time
d(off)
IC=100 A, VGE=15 V, Tj=25 °C - 1.80 2.25
V
(Note5)
IC=100 A, Tj=25 °C - 1.70 2.15
VGE=15 V, Tj=125 °C - 1.90 -
VCE=10 V, G-E short-circuited
V
nF
VCC=600 V, IC=100 A, VGE=±15 V,
ns
=6.2 Ω, Inductive load
R
G
- - 600
Publication Date : December 2013
2
< IGBT MODULES >
Min.
Typ.
Max.
IE=100 A, G-E short-circuited,
Tj=25 °C
-
2.60
3.40
(Note5)
IE=100 A,
Tj=25 °C
-
2.50
3.30
G-E short-circuited,
Tj=125 °C
-
2.06
-
(Note5)
(Note1)
Qrr
(Note1)
Reverse recovery charge
RG=6.2 Ω, Inductive load
-
2.7 - μC
Eon
Turn -on switching energy per pulse
VCC=600 V, IC=IE=100 A,
-
5.9
-
off
(Note1)
Main terminals-chip, per switch,
(Note4)
rg
Internal gate resistance
Per switch
- 0 -
Ω
Limits
I
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GES
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
V
GE(th)
Gate-emitter threshold voltage
IC=5 mA, VCE=10 V
5.4
6.0
6.6
V
Refer to the figure of test circuit
Tj=125 °C
-
2.00
-
Tj=150 °C
-
2.05
-
IC=50 A,
Tj=25 °C
-
1.70
2.15
(Note5)
Tj=150 °C
-
1.95
-
C
ies
Input capacitance
- - 5.0
C
oes
Output capacitance
- - 1.0
QG
Gate charge
VCC=600 V, IC=50 A, VGE=15 V
-
105 - nC
t
d(on)
Turn -on delay time
- - 300
tr
Rise time
- - 200
tf
Fall time - -
300
I
RRM
Repetitive peak reverse current
VR=V
RRM
, G-E short-circuited
- - 1.0
mA
IF=50 A,
Tj=25 °C
-
2.60
3.40
(Note5)
Tj=150 °C
-
2.10
-
IF=50 A,
Tj=25 °C
-
2.50
3.30
Tj=125 °C
-
2.06
-
(Note5)
trr
Reverse recovery time
VCC=600 V, IE=50 A, VGE=±15 V,
- - 300
ns
Qrr
Reverse recovery charge
RG=13 Ω, Inductive load
-
1.3 - μC
Eon
Turn -on switching energy per pulse
VCC=600 V, IC=IE=50 A,
-
3.2
-
Err
Reverse recovery energy per pulse
Inductive load
-
4.4 - mJ
rg
Internal gate resistance
- - 0 - Ω
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions
(Note1)
VEC
(Terminal)
(Note1)
VEC
(Chip)
t
rr
Emitter-collector voltage
Reverse recovery time VCC=600 V, IE=100 A, VGE=±15 V, - - 300 ns
Refer to the figure of test circuit Tj=125 °C - 2.16 -
Tj=150 °C - 2.10 -
Tj=150 °C - 2.00 -
Limits
Unit
V
V
E
Turn -off switching energy per pulse VGE=±15 V, RG=6.2 Ω, Tj=150 °C, - 9.7 -
Err
Reverse recovery energy per pulse Inductive load - 9.7 - mJ
R
Internal lead resistance
CC'+EE'
TC=25 °C
- - 0.8 mΩ
BRAKE PART IGBT/DIODE
Symbol Item Conditions
CES
V
CE sat
(Terminal)
IC=50 A, VGE=15 V, Tj=25 °C - 1.80 2.25
(Note5)
Collector-emitter saturation voltage
V
CE sat
(Chip)
VGE=15 V, Tj=125 °C - 1.90 -
VCE=10 V, G-E short-circuited
C
Reverse transfer capacitance - - 0.08
res
VCC=600 V, IC=50 A, VGE=±15 V,
t
Turn-off delay time
d(off)
=13 Ω, Inductive load
R
G
Min. Typ. Max.
- - 600
mJ
Unit
V
V
nF
ns
V
F
(Terminal)
Forward voltage
V
F
(Chip)
E
Turn -off switching energy per pulse VGE=±15 V, RG=13 Ω, Tj=150 °C, - 5.0 -
off
Publication Date : December 2013
Refer to the figure of test circuit Tj=125 °C - 2.16 -
V
V
Tj=150 °C - 2.00 -
mJ
3
< IGBT MODULES >
Min.
Typ.
Max.
R25
Zero-power resistance
TC=25 °C
4.85
5.00
5.15
kΩ
100
(Note4)
(Note6)
P25
Power dissipation
TC=25 °C
(Note4)
- - 10
mW
Limits
Min.
Typ.
Max.
(Note4)
R
Junction to case, per Inverter DIODE
(Note4)
- - 0.37
R
th(j- c)Q
Junction to case, per Brake IGBT
(Note4)
- - 0.44
R
th(j- c)D
Junction to case, per Brake DIODE
(Note4)
- - 0.66
Case to heat sink, per 1 module,
Thermal grease applied
(Note4, 7)
Mt
Mounting torque
Main terminals
M 5 screw
2.5
3.0
3.5
N·m
Terminal to base plate
20.1 - -
Terminal to terminal
10 - -
ec
Flatness of base plate
On the centerline X, Y
(Note8)
±0 - +100
μm
)
TT
/()
R
R
ln(B
)/(
502550
25
5025
11
−=
Y
X
+:Convex
-:Concave
+:Convex
-:Concave
mounting side
mounting side
mounting side
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T
=25 °C, unless otherwise specified)
j
NTC THERMISTOR PART
Symbol Item Conditions
(Note4)
ΔR/R Deviation of resistance R
B
B-constant Approximate by equation
(25/50)
=493 Ω, TC=100 °C
-7.3 - +7.8 %
- 3375 - K
Limits
Unit
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
th(j- c)Q
th(j- c)D
R
Contact thermal resistance
th(c- s)
Thermal resistance
Junction to case, per Inverter IGBT
- - 0.24
- 15 - K/kW
Unit
K/W
K/W
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
ds Creepage distance
Terminal to terminal 17 - -
Limits
Min. Typ. Max.
Unit
mm
da Clearance
Terminal to base plate 14.8 - -
mm
m mass - - 370 - g
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
3. Pulse width and repetition rate should be such that the device junction temperature (T
4. Case temperature (T
) should not increase beyond T
j
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink
C
jmax
rating.
) dose not exceed T
j
jmax
rating.
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6.
R
: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
25
: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
R
50
,
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 B1 tapping screw"
The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.
Publication Date : December 2013
4
< IGBT MODULES >
Limits
Min.
Typ.
Max.
Applied across GB-EB/
Inverter IGBT
6.2 - 62
Brake IGBT
13 - 130
CHIP LOCATION (Top vi e w )
Dimension in mm, tolerance: ±1 mm
Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: DIODE (*=U/V/W), DiBr: Brake DIODE, Th: NTC thermistor
VCC
-VGE
+VGE
-VGE
+
vCE
vGE
0
iE
iC
P
N
*
G*P
E*P
G*N
E*N
Load
RG
*: U, V, W
～
t
tf
tr
t
d(on)
i
C
10%
90 %
90 %
vGE
～
～
～
0 V
0 A
0
t
d(off)
t
Irr
Qrr=0.5×Irr×trr
0.5×Irr
t
trr
iE
0 A
IE
0.1×ICM
ICM
VCC
vCE
iC
t
0
ti
0.1×VCC
0.1×VCC
VCC
I
CM
vCE
iC
t
0
0.02×ICM
ti
IEM
vEC
iE
t
0 V
ti
t
VCC
0 A
IGBT Turn-on switching energy
IGBT Turn-off switching energy
DIODE Reverse recovery energy
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol Item Conditions
Unit
VCC (DC) Supply voltage Applied across P-N terminals - 600 850 V
V
Gate (-emitter drive) voltage
GEon
G*P-E*P/G*N-E*N(*=U, V, W) terminals
RG External gate resistance Per switch
13.5 15.0 16.5 V
Ω
TEST CIRCUIT AND WAVEFORMS
Switching test circuit and waveforms trr, Qrr characteristics test waveform
Tur n -on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : December 2013
5
< IGBT MODULES >
V
Short-
circuited
21
1
22
IC
20
19
18
17
VGE=15V
V
Short-
circuited
21
2
22
IC
16
15
14
13
VGE=15V
V
Short-
circuited
21
3
22
IC
12
11
10
9
VGE=15V
VGE=15V
Short-
circuited
21
1
22
IC
20
19
18
17
V
VGE=15V
Short-
circuited
21
2
22
IC
16
15
14
13
V
VGE=15V
Short-
circuited
21
3
22
IC
12
11
10
9
V
VGE=15V
21
4
22
IC
6
5
V
Gate-emitter
GVP-EVP GVN-EVN,
GB-EB
Gate-emitter
GUP-EUP, GUN-EUN,
GB-EB
Gate-emitter
GUP-EUP, GUN-EUN,
GB-EB
UP / UN IGBT
VP / VN IGBT
WP / WN IGBT
V
Short-
circuited
21
1
22
IE
20
19
18
17
Short-
circuited
V
Short-
circuited
21
2
22
IE
16
15
14
13
Short-
circuited
V
Short-
circuited
21
3
22
IE
12
11 10
9
Short-
circuited
Short-
circuited
21 1 22
IE
20
19
18
17
V
Short-
circuited
Short-
circuited
21
2
22
IE
16
15
14
13
V
Short-
circuited
Short-
circuited
21
3
22
IE
12
11
10
9
V
Short-
circuited
21
4
22
IE
6
5
V
Gate-emitter
GVP-EVP GVN-EVN,
GB-EB
Gate-emitter
GUP-EUP, GUN-EUN,
GB-EB
Gate-emitter
GUP-EUP, GUN-EUN,
GB-EB
Brake DIODE
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
short-circuited
GWP-EWP, GWN-EWN,
short-circuited
GWP-EWP, GWN-EWN,
V
characteristics test circuit
CEsat
short-circuited
GVP-EVP, GVN-EVN,
Brake IGBT
short-circuited
Publication Date : December 2013
GWP-EWP, GWN-EWN,
short-circuited
GWP-EWP, GWN-EWN,
short-circuited
GVP-EVP, GVN-EVN,
UP / UN DIODE VP / VN DIODE WP / WN DIODE
VEC / VF characteristics test circuit
6
< IGBT MODULES >
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
(TYPICAL)
Tj=25 °C
(Chip)
VGE=15 V
(Chip)
COLLECTOR CURRENT I
(A)
0
50
100
150
200
0 2 4 6 8 10
0
0.5
1
1.5
2
2.5
3
3.5
0 50 100 150 200
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VO LTAGE
(TYPICAL)
FREE WHEELING DIODE
(TYPICAL)
Tj=25 °C
(Chip)
G-E short-circuited
(Chip)
COLLECTOR-EMITTER SATURATION VOLTAGE V
(V)
0
2
4
6
8
10
6 8 10 12 14 16 18 20
10
100
1000
0.5 1 1.5 2 2.5 3 3 .5 4
GATE -EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
°C
°C
Tj=125 °C
IC=200 A
IC=100 A
IC=40 A
Tj=150 °C
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
C
VGE=20 V
OUTPUT CHARACTERISTICS
15 V
12 V
11 V
10 V
9 V
CHARACTERISTICS
(V)
CEsat
Tj=150
Tj=125
Tj=25 °C
COLLECTOR-EMITTER SATURATION VOLTAGE V
CHARACTERISTICS
CEsat
(A)
E
EMITTER CURRENT I
FORWARD CHARACTERISTICS
Tj=25 °C
Publication Date : December 2013
7
< IGBT MODULES >
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
SWITCHING TIME (ns)
1
10
100
1000
10 100 1000
10
100
1000
1 10 100
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=6.2 Ω,
VCC=600 V, VGE=±15 V, IC/IE=100 A,
SWITCHING ENERGY (mJ)
0.1
1
10
10 100 1000
1
10
100
REVERSE RECOVERY ENERGY (mJ)
1
10
100
1 10 100
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
EXTERNAL GATE RESISTANCE RG (Ω)
off
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
SWITCHING CHARACTERISTICS
VCC=600 V, VGE=±15 V, RG=6.2 Ω, INDUCTIVE LOAD
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
t
d(off)
tf
t
d(on)
tr
SWITCHING CHARACTERISTICS
VCC=600 V, VGE=±15 V, IC=100 A, INDUCTIVE LOAD
---------------: T
SWITCHING TIME (ns)
=150 °C, - - - - -: Tj=125 °C
j
t
d(on)
t
r
t
tf
d(off)
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
---------------: Tj=150 °C, - - - - -: Tj=125 °C
E
Eon
Err
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
---------------: Tj=150 °C, - - - - -: Tj=125 °C
Eon
E
off
Err
Publication Date : December 2013
8
< IGBT MODULES >
(TYPICAL)
FREE WHEELING DIODE
(TYPICAL)
CAPACITANCE (nF)
0.01
0.1
1
10
100
0.1 1 10 100
10
100
1000
10 100 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER CURRENT IE (A)
(TYPICAL)
(MAXIMUM)
GAT E-EMITTER VOLTAGE V
(V)
0
5
10
15
20
0 50 100 150 200 250 300
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
GATE C H A R G E QG (nC)
TIME (S)
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
CAPACITANCE CHARACTERISTICS
G-E short-circuited, Tj=25 °C
REVERSE RECOVERY CHARACTERISTICS
VCC=600 V, VGE=±15 V, RG=6.2 Ω, INDUCTIVE LOAD
---------------: T
C
ies
(A)
rr
C
oes
(ns), I
rr
t
C
res
=150 °C, - - - - -: Tj=125 °C
j
Irr
trr
GATE C H A R G E CHARACTERISTICS
VCC=600 V, IC=100 A, Tj=25 °C
GE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
Single pulse, TC=25 °C
R
th(j- c)Q
=0.24 K/W, R
th(j- c)D
=0.37 K/W
th(j- c)
Publication Date : December 2013
NORMALIZED TRANSIENT THERMAL RESISTANCE Z
9
< IGBT MODULES >
COLLECTOR-EMITTER SATURATION
(TYPICAL)
CLAMP DIODE
(TYPICAL)
VGE=15 V
(Chip)
G-E short-circuited
(Chip)
COLLECTOR-EMITTER SATURATION VOLTAGE V
(V)
0
0.5
1
1.5
2
2.5
3
3.5
0 20 40 60 80 100
10
100
1000
0.5 1 1 .5 2 2.5 3 3 .5 4
COLLECTOR CURRENT IC (A)
FORWARD CURRENT IF (A)
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
SWITCHING TIME (ns)
1
10
100
1000
1 10 100
10
100
1000
10 100 1000
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
Tj=150 °C
Tj=125 °C
Tj=25 °C
Tj=150 °C
Tj=25 °C
Tj=125 °C
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRAKE PART
VOLTAGE CHARACTERISTICS
CEsat
(V)
F
FORWARD CHARACTERISTICS
FORWARD VOLTAGE V
SWITCHING CHARACTERISTICS
VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
t
d(off)
t
f
t
d(on)
SWITCHING TIME (ns)
t
r
SWITCHING CHARACTERISTICS
VCC=600 V, IC=50 A, VGE=±15 V, INDUCTIVE LOAD
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
t
d(off)
tf
t
d(on)
tr
Publication Date : December 2013
10
< IGBT MODULES >
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=13 Ω,
VCC=600 V, IC/IF=50 A, VGE=±15 V,
SWITCHING ENERGY (mJ)
0.01
0.1
1
10
1 10 100
0.1
1
10
100
REVERSE RECOVERY ENERGY (mJ)
1
10
100
10 100 1000
COLLECTOR CURRENT IC (A)
FORWARD CURRENT IF (A)
EXTERNAL GATE RESISTANCE RG (Ω)
BRAKE DIODE
(TYPICAL)
(MAXIMUM)
t
(ns), I
(A)
10
100
1000
1 10 100
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
FORWARD CURRENT IF (A)
TIME (S)
off
Err
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRAKE PART
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
E
off
Eon
Err
Eon
E
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
REVERSE RECOVERY CHARACTERISTICS
VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD
---------------: T
rr
rr
=150 °C, - - - - -: Tj=125 °C
j
trr
Irr
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
Single pulse, TC=25 °C
R
th(j- c)Q
=0.44 K/W, R
th(j- c)D
=0.66 K/W
th(j- c)
Publication Date : December 2013
NORMALIZED TRANSIENT THERMAL RESISTANCE Z
11
< IGBT MODULES >
(TYPICAL)
RESISTANCE R (kΩ)
0.1
1
10
100
-50 -25 0 25 50 75 100 125
TEMPERATURE T (°C)
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
NTC thermistor part
TEMPERATURE CHARACTERISTICS
Publication Date : December 2013
12
< IGBT MODULES >
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
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Publication Date : December 2013
13
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