Powerex CM100RX-24S Data Sheet

CM100RX-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

AN

AP

AK

AJ

12

11

10

N M L K B

9

8

7

6

5

AB
(6 PLACES)

DETAIL "B"

TH1

2

TH

(11)

(10)

NTC

*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5

AX

AL

AT

AR

AS

AU

AL

AV

AL

AW

AY

DETAIL "B"

AQ

AZ

BA

R

AD

C

AC

BB

DETAIL "A"

AH

AL

AK

AJ

AE

T

S

R

U

V

AF
AG

BC
BD

BE

H

J

QR

P

Q

P

H

X Y Z Z

P(35)

UP(34)

G

E

G

UP(33)

UN(30)

B(4)

GB(6)

EB(5)

N(36)

34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13

AA(4 PLACES)

35

36

1 2 3 4

J

P W

VP(26)

G

E

VP(25)

U(1) V(2) W(3)

G

VN(22)

ALAL

ALALAL

AMAMAM

AMAM
A
D
E

F
G

DETAIL "A"

RQ

WP(18)

G

E

WP(17)

G

WN(14)

EWN(13)EVN(21)EUN(29)

Z

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.39 136.9
B 3.03 77.1

C 0.67+0.04/-0.02 17.0+1.0/-0.5
D 4.79 121.7
E 4.33±0.02 110.0±0.5
F 3.89 99.0
G 3.72 94.5
H 0.83 21.14
J 0.37 6.5
K 2.44 62.0
L 2.26 57.5
M 1.97±0.02 50.0±0.5
N 1.53 39.0
P 0.24 6.0
Q 0.48 12.0
R 0.67 17.0
S 1.53 39.0
T 0.87 22.0
U 0.55 14.0
V 0.54 13.64
W 0.33 8.5
X 0.53 13.5
Y 0.81 20.71
Z 0.9 22.86
AA 0.22 Dia. 5.5 Dia.
AB M5 M5
AC 0.06 1.5

Dimensions Inches Millimeters

AD 0.51 13.0
AE 0.12 3.0
AF 0.21 5.4
AG 0.49 12.5
AH 0.81 20.5
AJ 0.30 7.75
AK 0.28 7.25
AL 0.15 3.81
AM 0.45 11.44
AN 0.14 3.5
AP 0.16 4.06
AQ 0.78 20.05
AR 0.03 0.8
AS 0.27 7.0
AT 0.16 4.2
AU 0.61 15.48
AV 0.60 15.24
AW 0.46 11.66
AX 0.04 1.15
AY 0.02 0.65
AZ 0.29 7.4
BA 0.05 6.2
BB 0.49 12.5
BC 0.17 Dia. 4.3 Dia.
BD 0.10 Dia. 2.5 Dia.
BE 0.08 Dia. 2.1Dia.

Six IGBTMOD™ + Brake
NX-S Series Module

100 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
and a seventh IGBT with free­wheel diode for dynamic braking.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM100RX-24S is a 1200V (V
100 Ampere Six-IGBTMOD™ +
Brake Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 100 24

CE(sat)

Free-Wheel Diode

Heat Sinking

),

CES

V

CES

110/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module

100 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol CM100RX-24S Units

Maximum Junction Temperature T

Operating Power Device Junction Temperature T

Storage Temperature T

+175 °C

j(max)

-40 to 150 °C

j(op)

-40 to 125 °C

stg

Mounting Torque, M5 Mounting Screws — 31 in-lb

Mounting Torque, M5 Main Terminal Screws — 31 in-lb

Module Weight (Typical) — 330 Grams

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V

2500 V

ISO

rms

Inverter Sector

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 118°C)

*1,*5

IC 100 Amperes

Collector Current (Pulse)*4 I

Total Power Dissipation (TC = 25°C)

Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)

*1,*5

P

*1,*5

I

Emitter Current, Free Wheeling Diode Forward Current (Pulse)*4 I

1200 Volts

CES

±20 Volts

GES

200 Amperes

CRM

750 Watts

tot

*3

100 Amperes

E

*3

200 Amperes

ERM

Brake Sector

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)

Collector Current (Pulse)*4 I

Total Power Dissipation (TC = 25°C)

Repetitive Peak Reverse Voltage V

Forward Current (TC = 25°C)

Forward Current (Pulse)*4 I

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*5 Junction temperature (Tj) should not increase beyond maximum junction temperature (T

*1,*5

IC 50 Amperes

*1,*5

P

*1,*5

I

j(max)

) rating.

j(max)

rating.

1200 Volts

CES

±20 Volts

GES

100 Amperes

CRM

425 Watts

tot

*3

1200 Volts

RRM

*3

50 Amperes

F

*3

100 Amperes

FM

2 10/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module

100 Amperes/1200 Volts

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Inverter Sector

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Chip) IC = 100A, VGE = 15V, Tj = 125°C — 1.9 — Volts

IC = 100A, VGE = 15V, Tj = 150°C — 1.95 — Volts

Collector-Emitter Saturation Voltage V

(Terminal) IC = 100A, VGE = 15V, Tj = 125°C*6 — 2.0 — Volts

IC = 100A, VGE = 15V, Tj = 150°C*6 — 2.05 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V — 233 — nC

Inductive Turn-on Delay Time t

Load Turn-on Rise Time tr VCC = 600V, IC = 100A, *7 — — 200 ns

Switch Turn-off Delay Time t

Time Turn-off Fall Time tf RG = 27Ω, Inductive Load, — — 300 ns

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Loss per Pulse Eon VCC = 600V, IC (IE) = 100A, *7 — 16.7 — mJ

Turn-off Switching Loss per Pulse E

Reverse Recovery Loss per Pulse E

Emitter-Collector Voltage V

(Chip) IE = 100A, VGE = 0V, Tj = 125°C — 1.7 — Volts

IE = 100A, VGE = 0V, Tj = 150°C — 1.7 — Volts

Emitter-Collector Voltage V

(Terminal) IE = 100A, VGE = 0V, Tj = 125°C*6 — 1.8 — Volts

IE = 100A, VGE = 0V, Tj = 150°C*6 — 1.8 — Volts

VCE = V

CES

±VGE = V

GES

IC = 10mA, VCE = 10V 5.4 6 6.6 Volts

GE(th)

IC = 100A, VGE = 15V, Tj = 25°C — 1.7 2.15 Volts

CE(sat)

IC = 100A, VGE = 15V, Tj = 25°C*6 — 1.8 2.25 Volts

CE(sat)

— — 10 nF

ies

VGE = 0V, VCE = 10V — — 2.0 nF

oes

— — 0.17 nF

res

— — 300 ns

d(on)

VGE = ±15V, — — 600 ns

d(off)

*3

IE = 100A — — 300 ns

rr

*3

— 5.3 — µC

rr

VGE = ±15V, RG = 27Ω, — 10.7 — mJ

off

*3

Tj = 150°C, Inductive Load — 6.0 — mJ

rec

*3

IE = 100A, VGE = 0V, Tj = 25°C — 1.7 2.15 Volts

EC

*3

IE = 100A, VGE = 0V, Tj = 25°C*6 — 1.8 2.25 Volts

EC

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 0.5 µA

GES

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case*1 R

Thermal Resistance, Junction to Case*1 R

Internal Gate Resistance rg Per Switch — 0 — Ω

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Recommended maximum collector supply voltage VCC is 800Vdc.

Q Per IGBT — — 0.20 K/W

th(j-c)

D Per FWDi — — 0.29 K/W

th(j-c)

310/10 Rev. 1