POWEREX CM100DU-24F Datasheet

CM100DU-24F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

P - NUTS (3 PLACES)

TC MEASURING

N

CM

C2E1 E2 C1

B

M

C

C2E1

K

POINT

A

D

RTC

Q (2 PLACES)

E

E2G2G1E1

K

J

E2

RTC

F

G

H

F

R

L

G2
E2

C1

E1
G1

Trench Gate Design
Dual IGBTMOD™

100 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recover y free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0
B 1.89 48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.16 4.0
G 0.71 18.0
H 0.02 0.5

Dimensions Inches Millimeters

J 0.53 13.5
K 0.91 23.0
L 1.13 28.7

M 0.67 17.0
N 0.28 7.0

P M5 M5

Q 0.26 Dia. 6.5 Dia.
R 0.16 4.0

Applications:

□ AC Motor Control
□ UPS
□ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM100DU-24F is a
1200V (V

), 100 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 100 24

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM100DU-24F
Trench Gate Design Dual IGBTMOD™

100 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM100DU-24F Units

Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
100 Amperes

200* Amperes

100 Amperes

200* Amperes

500 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

Total Gate Charge Q
Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES
GES

GE(th)

CE(sat)

G

EC

VCE = V
VGE = V

, VGE = 0V ––1mA

CES

, VCE = 0V ––20 µA

GES

IC = 10mA, VCE = 10V 5 6 7 Volts

IC = 100A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts

IC = 100A, VGE = 15V, Tj = 125°C – 1.9 – Volts

VCC = 600V, IC = 100A, VGE = 15V – 1100 – nC

IE = 100A, VGE = 0V ––3.2 Volts

rating.

j(max)

2

2