CM1000DXL-24S
Di1 Di2
Tr 1Tr2
Es1
(62)G1(61)
TH2
(57)
TH1
(56)
Th
Cs1
(52)
Es2
(47)G2(46)
Cs2
(42)
C1(1)
C1(2)
E2(3)
E2(4)
E1C2 (32)
E1C2 (33)
NTC
DETAIL "B"
A
B
C
D
E
F
G
H
J
K
L
L
K
Y
AAFED
Z
Z
AC
R
AB
AD
AE
AC
AF
AG
V
U
T
PQNC
R
S
M
AH
AJ
AN
AS
AR
AQ
AP
AM
AL
AK
DETAIL "B"
DETAIL "A"
W(6 PLACES)
X(4 PLACES)
DETAIL "A"
1
2
3
4
56789101112131415161718192021222324252627
63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41
28
29
30
31
32
33
37
38
39
34
35
36
40
AT AU AU AV AU
AM AM
AM
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBTMOD™
NX-S Series Module
1000 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Dimensions Inches Millimeters
Y 0.75 19.24
Z 0.86 22.0
AA 1.08 27.53
AB 0.14 3.5
AC 0.51 13.0
AD 0.19 3.0
AE 0.28 7.0
AF 0.67+0.04/-0.02 17.0+1.0/-0.5
AG 0.81 20.5
AH 0.29 7.4
AJ 0.05 1.2
AK 0.02 0.65
AL 0.04 1.15
AM 0.15 3.81
AN 0.5 12.5
AP 0.059 1.5
AQ 0.08 Dia. 2.1 Dia.
AR 0.09 Dia. 2.5 Dia.
AS 0.16 Dia. 4.3 Dia.
AT 0.67 16.9
AU 0.6 15.24
AV 0.75 19.05
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.98 152.0
B 5.39 137.0
C 4.79 121.7
D 4.61 117.2
E 4.33±0.02 110.0±0.5
F 3.72 94.5
G 0.6 15.14
H 0.3 7.5
J 0.53 13.5
K 0.14 3.6
L 0.3 7.75
M 0.016 4.05
N 1.53 39.0
P 0.86 22.0
Q 1.95 49.72
R 0.25 6.5
S 0.83 21.14
T 0.23 6.0
U 0.47 12.0
V 0.67 17.0
W M6 Metric M6
X 0.22 5.5 Dia.
Features:
£ Low Drive Power
£ Low V
CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM1000DXL-24S is a 1200V
(V
), 1000 Ampere Dual
CES
IGBTMOD™ Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 1000 24
V
CES
110/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module
1000 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol CM1000DX-24S Units
Maximum Junction Temperature T
Operating Power Device Junction Temperature T
Storage Temperature T
+175 °C
j(max)
-40 to 150 °C
j(op)
-40 to 125 °C
stg
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M6 Main Terminal Screws — 40 in-lb
Module Weight (Typical) — 690 Grams
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V
2500 V
ISO
rms
Inverter Sector
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 118°C)
*1,*5
I
Collector Current (Pulse)*4 I
Total Power Dissipation (TC = 25°C)
Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)
*1,*5
P
*1,*5
I
Emitter Current, Free Wheeling Diode Forward Current (Pulse)*4 I
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*5 Junction temperature (Tj) should not increase beyond maximum junction temperature (T
j(max)
) rating.
j(max)
rating.
1200 Volts
CES
±20 Volts
GES
1000 Amperes
C
2000 Amperes
CRM
7500 Watts
tot
*3
1000 Amperes
E
*3
2000 Amperes
ERM
2 10/10 Rev. 1