Powerex CM1000DXL-24S Data Sheet

CM1000DXL-24S

Di1 Di2

Tr 1Tr2

Es1
(62)G1(61)

TH2
(57)

TH1
(56)

Th

Cs1
(52)

Es2
(47)G2(46)

Cs2
(42)

C1(1)

C1(2)

E2(3)

E2(4)

E1C2 (32)

E1C2 (33)

NTC

DETAIL "B"

A

B

C

D

E

F

G

H

J

K

L

L

K

Y

AAFED

Z

Z

AC

R

AB

AD

AE

AC

AF

AG

V

U

T

PQNC

R

S

M

AH

AJ

AN

AS
AR

AQ

AP

AM

AL

AK

DETAIL "B"

DETAIL "A"

W(6 PLACES)

X(4 PLACES)

DETAIL "A"

1

2

3

4

56789101112131415161718192021222324252627

63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41

28

29

30

31

32

33

37

38

39

34

35

36

40

AT AU AU AV AU

AM AM

AM

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

Dual IGBTMOD™
NX-S Series Module

1000 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Dimensions Inches Millimeters

Y 0.75 19.24
Z 0.86 22.0
AA 1.08 27.53
AB 0.14 3.5
AC 0.51 13.0
AD 0.19 3.0
AE 0.28 7.0
AF 0.67+0.04/-0.02 17.0+1.0/-0.5
AG 0.81 20.5
AH 0.29 7.4
AJ 0.05 1.2
AK 0.02 0.65
AL 0.04 1.15
AM 0.15 3.81
AN 0.5 12.5
AP 0.059 1.5
AQ 0.08 Dia. 2.1 Dia.
AR 0.09 Dia. 2.5 Dia.
AS 0.16 Dia. 4.3 Dia.
AT 0.67 16.9
AU 0.6 15.24
AV 0.75 19.05

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0
B 5.39 137.0
C 4.79 121.7
D 4.61 117.2
E 4.33±0.02 110.0±0.5
F 3.72 94.5
G 0.6 15.14
H 0.3 7.5
J 0.53 13.5
K 0.14 3.6
L 0.3 7.75
M 0.016 4.05
N 1.53 39.0
P 0.86 22.0
Q 1.95 49.72
R 0.25 6.5
S 0.83 21.14
T 0.23 6.0
U 0.47 12.0
V 0.67 17.0
W M6 Metric M6
X 0.22 5.5 Dia.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM1000DXL-24S is a 1200V
(V

), 1000 Ampere Dual

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 1000 24

V

CES

110/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module

1000 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol CM1000DX-24S Units

Maximum Junction Temperature T

Operating Power Device Junction Temperature T

Storage Temperature T

+175 °C

j(max)

-40 to 150 °C

j(op)

-40 to 125 °C

stg

Mounting Torque, M5 Mounting Screws — 31 in-lb

Mounting Torque, M6 Main Terminal Screws — 40 in-lb

Module Weight (Typical) — 690 Grams

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V

2500 V

ISO

rms

Inverter Sector

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 118°C)

*1,*5

I

Collector Current (Pulse)*4 I

Total Power Dissipation (TC = 25°C)

Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)

*1,*5

P

*1,*5

I

Emitter Current, Free Wheeling Diode Forward Current (Pulse)*4 I

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*5 Junction temperature (Tj) should not increase beyond maximum junction temperature (T

j(max)

) rating.

j(max)

rating.

1200 Volts

CES

±20 Volts

GES

1000 Amperes

C

2000 Amperes

CRM

7500 Watts

tot

*3

1000 Amperes

E

*3

2000 Amperes

ERM

2 10/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module

1000 Amperes/1200 Volts

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Inverter Sector

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

V

CES

±VGE = V

GES

I

GE(th)

IC = 1000A, VGE = 15V, Tj = 25°C — 1.7 2.15 Volts

CE(sat)

= V

CE

= 100mA, VCE = 10V 5.4 6 6.6 Volts

C

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 0.5 µA

GES

(Chip) IC = 1000A, VGE = 15V, Tj = 125°C — 1.9 — Volts

IC = 1000A, VGE = 15V, Tj = 150°C — 1.95 — Volts

Collector-Emitter Saturation Voltage V

IC = 1000A, VGE = 15V, Tj = 25°C*6 — 1.85 2.3 Volts

CE(sat)

(Terminal) IC = 1000A, VGE = 15V, Tj = 125°C*6 — 2.05 — Volts

IC = 1000A, VGE = 15V, Tj = 150°C*6 — 2.10 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

— — 100 nF

ies

V

oes

— — 1.67 nF

res

= 0V, VCE = 10V — — 20 nF

GE

Total Gate Charge QG VCC = 600V, IC = 1000A, VGE = 15V — 2333 — nC

Inductive Turn-on Delay Time t

Load Turn-on Rise Time tr V

Switch Turn-off Delay Time t

Time Turn-off Fall Time tf R

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Loss per Pulse Eon V

Turn-off Switching Loss per Pulse E

Reverse Recovery Loss per Pulse E

Emitter-Collector Voltage V

— — 800 ns

d(on)

= 600V, IC = 1000A, *7 — — 200 ns

CC

V

d(off)

= 0.8Ω, Inductive Load, — — 300 ns

G

*3

I

rr

*3

— 53.3 — µC

rr

= 600V, IC (IE) = 1000A, *7 — 89 — mJ

CC

V

off

*3

T

rec

*3

I

EC

GE

= 150°C, Inductive Load — 73 — mJ

j

= 1000A, VGE = 0V, Tj = 25°C — 1.7 2.15 Volts

E

= ±15V, — — 600 ns

GE

= 1000A — — 300 ns

E

= ±15V, RG = 0.8Ω, — 137 — mJ

(Chip) IE = 1000A, VGE = 0V, Tj = 125°C — 1.7 — Volts

I

Emitter-Collector Voltage V

*3

I

EC

= 1000A, VGE = 0V, Tj = 150°C — 1.7 — Volts

E

= 1000A, VGE = 0V, Tj = 25°C*6 — 1.85 2.3 Volts

E

(Terminal) IE = 1000A, VGE = 0V, Tj = 125°C*6 — 1.85 — Volts

I

= 1000A, VGE = 0V, Tj = 150°C*6 — 1.85 — Volts

E

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case*1 R

Thermal Resistance, Junction to Case*1 R

Q Per IGBT — — 0.02 K/W

th(j-c)

D Per FWDi — — 0.038 K/W

th(j-c)

Internal Gate Resistance rg Per Switch — 2.0 — Ω

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Recommended maximum collector supply voltage VCC is 800Vdc.

310/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module

1000 Amperes/1200 Volts

NTC Thermistor Sector, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R TC = 25°C 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C, R

B Constant B

Power Dissipation P25 T

Approximate by Equation*9 — 3375 — K

(25/50)

C

= 493Ω –7.3 — +7.8 %

100

= 25°C — — 10 mW

Module, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Lead Resistance (Main Terminals-Chip) R

Contact Thermal Resistance*1 R

(Case to Heatsink) (Per 1 Module)

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

*9 B

(25/50)

R
T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K]

= In(

R

25

)/( 1 –

50 T25 T50

1

) R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50 [K],

TC = 25°C (Per Switch) — — 0.5 mΩ

lead

Thermal Grease Applied — 0.007 — K/W

th(c-f)

*2

4 10/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(INVERTER PART - TYPICAL)

10

0

10

2

10

3

10

2

10

1

10

-1

10

0

10

1

0 0.5 1.0 1.5 2.0 2.5 3.0

10

1

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(INVERTER PART - TYPICAL)

10

2

10

4

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(INVERTER PART - TYPICAL)

10

6 8 10 1412 16 18 20

8

6

4

2

0

Tj = 25°C

VGE = 0V

C

ies

C

oes

C

res

IC = 2000A

IC = 1000A

IC = 400A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(INVERTER PART - TYPICAL)

0 2 4 6 8 10

0

VGE = 20V

10

11

12

13

9

Tj = 25°C

2000

400

800

1200

1600

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(INVERTER PART - TYPICAL)

3.5

3.0

0

2.0

2.5

1.0

1.5

0.5

0

200016001200800400

10

-1

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

2

10

3

10

2

10

1

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(INVERTER PART - TYPICAL)

t

d(off)

t

d(on)

t

r

VCC = 600V
V

GE

= ±15V

R

G

= 0.8Ω

T

j

= 150°C

Inductive Load

t

f

10

4

GATE RESISTANCE, R

G

, (Ω)

10

3

10

-1

10

0

10

2

10

1

SWITCHING TIME, (ns)

SWITCHING TIME VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

t

d(off)

t

d(on)

t

r

VCC = 600V
V

GE

= ±15V

I

C

= 1000A

T

j

= 150°C

Inductive Load

t

f

10

1

15

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

(INVERTER PART)

20

0

16

12

8

4

0

500 1000 1500 2000 2500 35003000

IC = 1000A
V

CC

= 600V

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY CHARACTERISTICS

(INVERTER PART - TYPICAL)

10

3

10

2

10

3

10

2

10

1

10

4

VCC = 600V
V

GE

= ±15V

R

G

= 0.8Ω

T

j

= 150°C

Inductive Load

I

rr

t

rr

REVERSE RECOVERY, I

rr

(A), t

rr

(ns)

VGE = 15V

Tj = 25°C
T

j

= 125°C

T

j

= 150°C

VGE = 15V

Tj = 25°C
T

j

= 125°C

T

j

= 150°C

CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module

1000 Amperes/1200 Volts

510/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(INVERTER PART - TYPICAL)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
T

C

= 25°C

Per Unit Base =

R

th(j-c)

=

0.020°C/W

(IGBT)

R

th(j-c)

=

0.038°C/W

(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

on

, E

off

, (mJ/PULSE)

10

3

10

-1

10

0

10

2

10

1

VCC = 600V
V

GE

= ±15V

I

C

= 1000A

T

j

= 150°C

L

s

= 50nH

Inductive Load

10

1

SWITCHING LOSS VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

E

on

E

off

GATE RESISTANCE, R

G

, (Ω)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

3

10

-1

10

0

10

2

10

1

10

1

REVERSE RECOVERY SWITCHING LOSS VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

3

10

2

10

3

10

2

10

1

10

4

REVERSE RECOVERY SWITCHING LOSS VS.

EMITTER CURRENT

(INVERTER PART - TYPICAL)

E

rr

E

rr

VCC = 600V
V

GE

= ±15V

R

G

= 0.8Ω

T

j

= 150°C

L

s

= 50nH

Inductive Load

VCC = 600V
V

GE

= ±15V

R

G

= 0.8Ω

T

j

= 150°C

L

s

= 50nH

Inductive Load

E

on

E

off

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

on

, E

off

, (mJ/PULSE)

10

3

10

2

10

3

10

2

10

1

10

4

SWITCHING LOSS VS.

COLLECTOR CURRENT

(INVERTER PART - TYPICAL)

VCC = 600V
V

GE

= ±15V

I

C

= 1000A

T

j

= 150°C

L

s

= 50nH

Inductive Load

CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module

1000 Amperes/1200 Volts

6 10/10 Rev. 1