CM1000DUC-34SA
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
A
(8 PLACES)
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.91 150.0
B 5.10 129.5
C 1.67±0.01 42.5±0.25
D 5.41±0.01 137.5±0.25
E 6.54 166.0
F 2.91±0.01 74.0±0.25
G 1.65 42.0
H 0.55 14.0
J 1.50±0.01 38.0±0.25
K 0.16 4.0
L 1.36 +0.04/-0.02 34.6 +1.0/-0.5
Housing Type (J.S.T. MFG. CO. LTD)
BB = VHR-2N
CC = VHR-5N
P
U
BB
CC
G2
E2 (Es2)
C2
G2 E1
E2 G1
V
H H HHH H
C2E1
Tr 2
Di2
E2
D
G
H H
C2E1
E2
G G
LABEL
C1 (Cs1)C2 (Cs2)
E1 (Es1)
Tr 1
Di1
C1
G1
N
S
W
C1
C1
Dimensions Inches Millimeters
M 0.075±0.008 1.9±0.2
N 0.47 12.0
P 0.26 6.5
R M6 Metric M6
S 0.08 2.0
T 0.99 25.1
U 0.62 15.7
V 0.71 18.0
W 0.75 19.0
X 0.43 11.0
Y 0.83 21.0
Z 0.41 10.5
AA 0.22 5.5
J
X
Y
U
R (9 PLACES)
F
B
C
J
AA
T
E
F
M
Z
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2
L
L
Mega Power Dual IGBT
1000 Amperes/1700 Volts
K
Description:
Powerex Mega Power Dual (MPD)
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low V
£
£ Isolated Baseplate for Easy
£ RoHS Compliant
Applications:
£ High Power DC Power Supply
£ Large DC Motor Drives
£ Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1000DUC-34SA
is a 1700V (V
Dual IGBTMOD Power
Module.
Current Rating V
Type Amperes Volts (x 50)
CM 1000 34
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Heatsinking
), 1000 Ampere
CES
CES
103/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1000DUC-34SA
Mega Power Dual IGBT
1000 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 125°C)
*2,*4
IC 1000 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
*2,*4
P
Emitter Current*2 I
Emitter Current (Pulse, Repetitive)*3 I
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
Maximum Junction Temperature T
Maximum Case Temperature T
Operating Junction Temperature T
Storage Temperature T
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
j(max)
) rating.
j(max)
rating.
119.3
106.2
93.2
77.8
64.7
51.7
36.3
23.2
10.2
0
0
1700 Volts
CES
±20 Volts
GES
2000 Amperes
CRM
10,000 Watts
tot
*1
1000 Amperes
E
*1
2000 Amperes
ERM
4000 Volts
isol
175 °C
j(max)
125 °C
C (max)
-40 to +150 °C
j(op)
-40 to +125 °C
stg
38.2
51.0
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
98.9
111.8
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
2
LABEL SIDE
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1000DUC-34SA
Mega Power Dual IGBT
1000 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal = Chip) IC = 1000A, VGE = 15V, Tj = 125°C*5 — 2.1 — Volts
IC = 1000A, VGE = 15V, Tj = 150°C*5 — 2.15 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 1000V, IC = 1000A, VGE = 15V — 4700 — nC
Turn-on Delay Time t
Rise Time tr VCC = 1000V, IC = 1000A, VGE = ±15V, — — 350 ns
Turn-off Delay Time t
Fall Time tf — — 400 ns
Emitter-Collector Voltage V
(Terminal = Chip) IE = 1000A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts
IE = 1000A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts
Reverse Recovery Time t
Reverse Recovery Charge Q
Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 1000A, — 239 — mJ
Turn-off Switching Energy per Pulse E
Reverse Recovery Energy per Pulse E
Internal Lead Resistance R
Per Switch,TC = 25°C
Internal Gate Resistance rg Per Switch — 0.56 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
VGE = V
GES
IC = 100mA, VCE = 10V 5.4 6.0 6.6 Volts
GE(th)
IC = 1000A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts
CE(sat)
— — 260 nF
ies
VCE = 10V, VGE = 0V — — 27 nF
oes
— — 5 nF
res
— — 900 ns
d(on)
RG = 2.0Ω, Inductive Load — — 1250 ns
d(off)
*1
IE = 1000A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts
EC
*1
VCC = 1000V, IE = 900A, VGE = ±15V — — 400 ns
rr
*1
RG = 2.0Ω, Inductive Load — 270 — µC
rr
VGE = ±15V, RG = 2.0Ω, Tj = 150°C, — 269 — mJ
off
*1
Inductive Load — 130 — mJ
rr
CC' + EE'
Main Terminals-Chip, — 0.286 — mΩ
, VGE = 0V — — 1.0 mA
CES
, VCE = 0V — — 10 µA
GES
*4
0
38.2
119.3
106.2
93.2
64.7
36.3
23.2
10.2
51.0
Di2
Tr2
Di2
Tr2
Di2
Tr2
77.8
51.7
0
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
98.9
111.8
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
03/13 Rev. 3
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
LABEL SIDE
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1000DUC-34SA
Mega Power Dual IGBT
1000 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*4 R
Thermal Resistance, Junction to Case*4 R
Contact Thermal Resistance, R
Case to Heatsink (Per 1 Module)
Q Per IGBT — — 15 K/kW
th(j-c)
D Per Diode — — 24 K/kW
th(j-c)
Thermal Grease Applied — 6 — K/kW
th(c-f)
*6
Mechanical Characteristics
Mounting Torque Mt Main Terminals, M6 Screw 22 27 31 in-lb
Ms Mounting to Heatsink, M6 Screw 22 27 31 in-lb
Creepage Distance ds Terminal to Terminal 24 — — mm
Terminal to Baseplate 33 — — mm
Clearance da Terminal to Terminal 14 — — mm
Terminal to Baseplate 33 — — mm
Weight m — 1450 — Grams
Flatness of Baseplate ec On Centerline X, Y*7 -50 — +100 µm
Recommended Operating Conditons, Ta = 25°C
(DC) Supply Voltage VCC Applied Across C1-E2 — 1000 1200 Volts
Gate-Emitter Drive Voltage V
External Gate Resistance RG Per Switch 2.0 — 6.0 Ω
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
39 mm 39 mm
Y1
Y2
X
BOTTOM
– CONCAVE
+ CONVEX
BOTTOM
LABEL SIDE
BOTTOM
+ CONVEX
– CONCAVE
Applied Across G1-Es1/G2-Es2 13.5 15.0 16.5 Volts
GE(on)
0
38.2
51.0
119.3
106.2
93.2
77.8
64.7
51.7
36.3
23.2
10.2
0
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
98.9
Di1
Di1
Di1
Di1
Di1
Di1
Di1
Di1
Di1
111.8
Tr1
Tr1
Tr1
Tr1
Tr1
Tr1
Tr1
Tr1
Tr1
LABEL SIDE
4
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1000DUC-34SA
Mega Power Dual IGBT
1000 Amperes/1700 Volts
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
2000
VGE = 20V
15
1500
, (AMPERES)
C
1000
13.5
500
COLLECTOR CURRENT, I
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
4
10
3
10
, (AMPERES)
E
2
10
EMITTER CURRENT, I
1
10
0 21 53 4 6
EMITTER-COLLECTOR VOLTAGE, V
4
10
3
10
2
10
SWITCHING TIME, (ns)
1
10
0
10
1
10
(CHIP - TYPICAL)
VGE = 15V
HALF-BRIDGE
SWITCHING CHARACTERISTICS
VCC = 1000V
V
GE
R
= 2.0Ω
G
T
= 150°C
j
Inductive Load
COLLECTOR CURRENT, I
= ±15V
(TYPICAL)
t
f
t
d(on)
t
r
2
10
Tj = 25°C
12
11
10
9
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
EC
t
d(off)
, (AMPERES)
C
, (VOLTS)
3
10
SATURATION VOLTAGE CHARACTERISTICS
COLLECTOR-EMITTER
(CHIP - TYPICAL)
4.5
VGE = 15V
, (VOLTS)
CE(sat)
4.0
3.5
3.0
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
2.5
2.0
1.5
COLLECTOR-EMITTER
1.0
0.5
SATURATION VOLTAGE, V
0
0
COLLECTOR CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
3
10
, (nF)
2
10
res
, C
oes
, C
ies
1
10
0
10
CAPACITANCE, C
VGE = 0V
T
= 25°C
j
-1
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
4
10
VCC = 1000V
V
GE
I
= 1000A
C
T
= 125°C
j
3
Inductive Load
10
2
10
SWITCHING TIME, (ns)
1
10
-1
10
EXTERNAL GATE RESISTANCE, RG, (Ω)
(TYPICAL)
0
10
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
= ±15V
t
f
t
r
10
0
SATURATION VOLTAGE CHARACTERISTICS
10
8
, (VOLTS)
CE(sat)
6
COLLECTOR-EMITTER
(CHIP - TYPICAL)
Tj = 25°C
IC = 2000A
IC = 1000A
4
COLLECTOR-EMITTER
IC = 600A
2
SATURATION VOLTAGE, V
0
20001500500 1000
CE
C
ies
C
oes
C
res
t
d(off)
t
d(on)
2
10
1
10
1
10
6 8 10 1412 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
4
10
3
10
2
10
VCC = 1000V
SWITCHING TIME, (ns)
1
V
10
GE
R
= 2.0Ω
G
T
= 125°C
j
Inductive Load
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
4
10
VCC = 1000V
V
GE
I
= 1000A
C
T
= 150°C
j
Inductive Load
3
10
SWITCHING TIME, (ns)
2
10
0
10
EXTERNAL GATE RESISTANCE, R
(TYPICAL)
t
t
d(on)
t
= ±15V
10
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
= ±15V
t
f
t
r
f
r
2
t
d(off)
G
t
t
d(off)
d(on)
, (Ω)
3
10
1
10
03/13 Rev. 3
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1000DUC-34SA
Mega Power Dual IGBT
1000 Amperes/1700 Volts
REVERSE RECOVERY CHARACTERISTICS
3
10
VCC = 1000V
V
GE
R
= 2.0Ω
G
(ns)
rr
T
= 125°C
j
Inductive Load
(A), t
rr
2
10
REVERSE RECOVERY, I
1
10
1
10
CHARACTERISTICS (TYPICAL)
3
10
V
CC
V
GE
R
, (mJ)
rr
, (mJ)
off
, E
on
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
, (mJ)
rr
, (mJ)
off
, E
on
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
= 2.0Ω
G
T
= 125°C
j
2
10
1
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
3
10
VCC = 1000V
V
GE
I
C/IE
T
= 150°C
j
2
10
1
10
-1
10
(TYPICAL)
= ±15V
I
rr
t
rr
2
EMITTER CURRENT, IE, (AMPERES)
10
HALF-BRIDGE SWITCHING
= 1000V
= ±15V
E
on
E
off
E
rr
2
10
EMITTER CURRENT, IE, (AMPERES)
= ±15V
= 1000A
0
10
GATE RESISTANCE, RG, (Ω)
REVERSE RECOVERY CHARACTERISTICS
3
10
VCC = 1000V
V
GE
R
= 2.0Ω
2
10
G
T
= 150°C
j
Inductive Load
(ns)
rr
(A), t
rr
= ±15V
I
rr
t
rr
(TYPICAL)
20
15
, (VOLTS)
GE
10
GATE CHARGE VS. V
IC = 1000A
V
= 1000V
CC
T
= 25°C
j
GE
5
REVERSE RECOVERY, I
1
3
10
3
10
E
on
E
off
E
rr
1
10
10
1
10
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
3
10
VCC = 1000V
V
= ±15V
GE
R
, (mJ)
rr
, (mJ)
off
, E
on
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
th(j-c')
• (NORMALIZED VALUE)
= R
Z
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
= 2.0Ω
G
T
= 150°C
j
E
on
E
2
10
1
10
10
0
10
-1
10
-2
10
th
th
-3
10
off
E
rr
1
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10-310
-2
Single Pulse
T
= 25°C
C
Per Unit Base =
R
=
th(j-c)
15 K/kW
(IGBT)
R
=
th(j-c)
24 K/kW
(FWDi)
2
10
2
10
(MAXIMUM)
-1
10
-5
10
TIME, (s)
10
10
10
10
0
10
-4
10
GATE-EMITTER VOLTAGE, V
3
3
1
10
10
10
-3
0
3
10
, (mJ)
rr
, (mJ)
off
, E
on
2
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
1
10
10
-1
-2
-3
2000 80004000
0
GATE CHARGE, QG, (nC)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
V
= 1000V
CC
V
= ±15V
GE
I
= 1000A
C/IE
T
= 125°C
j
E
on
E
off
E
rr
-1
10
GATE RESISTANCE, RG, (Ω)
6000
0
1
10
6
03/13 Rev. 3
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