Powerex CM1000DUC-34SA Data Sheet
CM1000DUC-34SA
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
A
(8 PLACES)
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.91 150.0
B 5.10 129.5
C 1.67±0.01 42.5±0.25
D 5.41±0.01 137.5±0.25
E 6.54 166.0
F 2.91±0.01 74.0±0.25
G 1.65 42.0
H 0.55 14.0
J 1.50±0.01 38.0±0.25
K 0.16 4.0
L 1.36 +0.04/-0.02 34.6 +1.0/-0.5
Housing Type (J.S.T. MFG. CO. LTD)
BB = VHR-2N
CC = VHR-5N
P
U
BB
CC
G2
E2 (Es2)
C2
G2 E1
E2 G1
V
H H HHH H
C2E1
Tr 2
Di2
E2
D
G
H H
C2E1
E2
G G
LABEL
C1 (Cs1)C2 (Cs2)
E1 (Es1)
Tr 1
Di1
C1
G1
N
S
W
C1
C1
Dimensions Inches Millimeters
M 0.075±0.008 1.9±0.2
N 0.47 12.0
P 0.26 6.5
R M6 Metric M6
S 0.08 2.0
T 0.99 25.1
U 0.62 15.7
V 0.71 18.0
W 0.75 19.0
X 0.43 11.0
Y 0.83 21.0
Z 0.41 10.5
AA 0.22 5.5
J
X
Y
U
R (9 PLACES)
F
B
C
J
AA
T
E
F
M
Z
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2
L
L
Mega Power Dual IGBT
1000 Amperes/1700 Volts
K
Description:
Powerex Mega Power Dual (MPD)
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low V
£
£ Isolated Baseplate for Easy
£ RoHS Compliant
Applications:
£ High Power DC Power Supply
£ Large DC Motor Drives
£ Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1000DUC-34SA
is a 1700V (V
Dual IGBTMOD Power
Module.
Current Rating V
Type Amperes Volts (x 50)
CM 1000 34
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Heatsinking
), 1000 Ampere
CES
CES
103/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1000DUC-34SA
Mega Power Dual IGBT
1000 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 125°C)
*2,*4
IC 1000 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
*2,*4
P
Emitter Current*2 I
Emitter Current (Pulse, Repetitive)*3 I
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
Maximum Junction Temperature T
Maximum Case Temperature T
Operating Junction Temperature T
Storage Temperature T
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
j(max)
) rating.
j(max)
rating.
119.3
106.2
93.2
77.8
64.7
51.7
36.3
23.2
10.2
0
0
1700 Volts
CES
±20 Volts
GES
2000 Amperes
CRM
10,000 Watts
tot
*1
1000 Amperes
E
*1
2000 Amperes
ERM
4000 Volts
isol
175 °C
j(max)
125 °C
C (max)
-40 to +150 °C
j(op)
-40 to +125 °C
stg
38.2
51.0
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
Tr2
98.9
111.8
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Di1
Tr1
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
2
LABEL SIDE
03/13 Rev. 3
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