Powerex C52 Data Sheet
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Ii
II
A R S
The General Electric C50 and
diffused devices designed for phase control applications.
FEATURES:
..
High
dv/dt With Selection Available
..
Excellent Surge and e t Ratings Providing Easy Fusing
..
Rugged Hermetic Package
TYPE
C50U (2N1909) C52U 25 Volts
C50F (2N191O)
C50A
C50G
C50B
C50H
C50C
C50D
(2NI9l1)
(2NI912)
(2NI913)
(2N1914) C52H
(2NI915)
(2NI916)
C50E
C52F
C52A
C52G
C52B (2N1795) 200
C52C
C52D
C52E
C52
Silicon Controlled Rectifiers are all-
MAXIMUM
OFF-STATE
ALLOWABLE
REPETITIVE
VORMI
T J =
-40°C
PEAl<
VOLTAGE
to
+125°C
(2N1792) 50 50
(2NI793)
(2NI794)
100
150 150
(2N1796) 250
(2NI797)
(2NI798)
300 300 400
400 400 500
500 500 600
RATINGS
REPETITIVE
REVERSE
VRRMI
T J =
-40°C
25 Volts
100
200 300
250 350
r
s
PEAK
VOLTAGE
to
+125°C
C50
NON·REPETITIVE
REVERSE
C50M C52M 600 600 720
C50S
C50N
C50T
C52S 700 700 840
C52N 800 800 960
C52T
900
900 1040
C50P C52P 1000 1000
C50PA C52PA
C50PB
C52PB 1200 1200
l100
1100 1320
VRSM
T
=
J
25
75
150
225
1200
1440
PEAK
VOLTAGE
1
+125°C
Volts
1 Half sine wave waveform,
RMS
On-State Current,
Average
On-State Current, IT(AV)' _
Critical Rate-of-Rise
Switching From 1200 Volts
Switching From
Peak One-Cycle Surge (Non-Repetitive) On-State Current, I
Peak One-Cycle Surge (Non-Repetitive) On-State Current, I
2
1
t (for fusing), for times;;;' 8.3 milliseconds (See Figure
2
t (for fusing), for times;;;' 1.5 milliseconds (See Figure 9)
I
Peak Gate Power Dissipation, P
Average Gate
Power Dissipation,
Storage Temperature, Tstg
Operating
Stud Torque
*di/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions
20 ohms gate trigger source with 0.5 /lsec short circuit trigger current rise time.
Temperature, T
.....................................
10
msec, maximum pulse width.
IT(RMS) _ .. _ .........................
..............
of
On-State Current (Non-Repetitive) di/d t: *
_
.. _ .....
......................................
600 Volts _
..................
9)
(See Figure 7)
GM
PG(AV)
........
............................................
J
.............
_
.............................................
...........................
_ . _
Depends on Conduction Angles (See Charts 3
__
TSM
TSM
......
......
(60 Hz)
(50 Hz)
_
............
............
..............
_
..............
...............
_
... _ .. _ ..................
__
........
....
110 Amperes (All Conduction Angles)
_ . 100 Amperes Per Microsecond
_
_
.....
.1
125 Lbs.-In. (Min.) - 150 Lbs.-1n. (Max.)
707
and
200 Amperes Per Microsecond
...........
_ . . . . . . .
1000 Amperes
..
910 Amperes
4150 (RMS Ampere)2 Seconds
2850 (RMS Ampere)2 Seconds
00 Watts for 150 Microseconds
-
...........
AO°C
_
.........
14
N-m
of
VDRM stated above; 20 volts,
-40°Cto
(Min.) - 17
to
N-m
2 Watts
+150°C
+12SoC
(Max.)
4)
I
C50,C52
CHARACTERISTICS
-
-
-
-
.25
-
-
-
200
-
MAX.
10
75
130
40
3.0
-
2.5 Volts
100 mAdc
0.4
-
80
TEST
Repetitive Peak Reverse
Off-State Current
and
C50, C52U
C50,
C52F
C52A
C50,
C50,
C52G
C50, C52B
C50,
C52H
C50,
C52C
C50, C52D
C50,
C52E
C50,
C52M
C50, C52S
C50, C52N 800
C50, C52T
C50, C52P 1000
C50, C52PA
C50, C52PB
DC
Gate Trigger Current
DC
Gate Trigger Voltage V
Peak On-State Voltage
Holding Current
Thermal Resistance
Critical Rate-of-Rise
Voltage. (Higher values may cause
device switching.) Circuited.
Circuit
(Typical)
Commutated
(2N1909)
(2N1910)
(2N1911)
(2N1912)
(2N1913)
(2N1914)
(2N1915)
(2N1916)
of
Tum-Off
(2N1792)
(2N1793)
(2N1794)
(2N1795)
(2N1796)
(2N1797)
(2N1798)
Off-State
Time
SYMBOL
IORM
and
IRRM
IGT
GT
V
TM
IH
ROJe
dv/dt
tq
MIN.
UNITS
rnA T
mAdc
Vdc
DC/Watt
Volts/
/J.sec
/J.sec
TEST
= -40°C
J
V
ORM
Te
= +25°C,
tp
;;;,
Te
= -40°C,
tp
;;;,
Te
= +125°C,
tp
;;;,
Te
= -40°C
RL
= 50 Ohms, tp
Te
= +125°C,
Ohms, tp = 20
Te
= +25°C,
Duty
Te
= +25°C, Anode Supply = 24 Vdc.
Initial
J unction-to-Case
= +125°C, Rated V
T
J
Exponential Rising Waveform, Gate Open
(.632).
(1)
(2)
(3) V
(4)
(5) Rate-of-Rise
to
=
VRRM
1100
1200
Vo
20
/J.sec
20
20
Cycle ~ 0.01%
Te
IT = 50
V
ORM
Blocking Voltage
Vo
/J.sec
/J.sec
to
ITM
Forward
Exponential
= +120°C
Amps.
=
50
R
(Reapplied) =
Volts Min.
(6) Gate Bias; 0 Volts, 100
Turn-Off
(7)
Duty
Cycle ~ .01%.
CONDITIONS
+125°C
25 Volts Peak
50
100
ISO
200
250
300
400
500
600
700
900
= 6 Vdc,
= 6 Vdc,
Vo = 6Vdc,
+125°C,
;;;,
Vo
= Rated,
/J.sec
RL
RL
RL
Vo = 6Vdc,
20
/J.sec
RL = 1000
= 3 Ohms
= 3 Ohms
= 500 Amps. Peak.
Current = 2 Amperes
Using Linear
ORM
dv/dt =
Rated
of
Reapplied Forward
= 20 V//1sec (Linear)
mum
Interval
= 3 Ohms
VORM
During
Higher
minimum
dv/dt selections
708
available,
consult factory.
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