
HIGH SPEED
Silicon
600
The
General Electric C49 Silicon Controlled Rectifier
Controlled
VOLTS
device designed for power switching at high frequencies.
FEATURES:
..
Fully characterized for
..
High dvldt
..
Excellent surge and e t ratings providing easy fusing.
o Rugged hermetic package.
with
o Choppers 0
..
Inverters
operation
selections available.
Equipment
in inverter
designers can use
Induction
..
High
and
chopper
the
Frequency
C49 in demanding applications, such as:
Heaters
Rectifier
110
ARMS
is
an all-diffused
applications.
C49
Lighting •
..
Cycloconverters
DC
to
DC Conversion
C49
C49··2
MAXIMUM
REPETITIVE
TYPES
C49AlO, C49A20
C49B10,
C49ClO, C49C20
C49DlO, C49D20
C49E10,
C49M10, C49M20
1 Half sinewave waveform, 10 ms max. pulse width.
RMS On-State Current,
Peak One Cycle Surge (Non-Repetitive) On-State Current, I
Peak One Cycle Surge (Non-Repetitive) On-State Current, I
et
(for
et
(for
Critical Rate-of-Rise
Critical Rate-of-Rise
Average Gate Power Dissipation,
Storage Temperature, T
Operating Temperature, T
Stud
Torque
C49B20
C49E20
IT(RMS)
fusing) for times ~ 1.5 milliseconds
fusing) for times ~ 8.3 milliseconds
of
On-State Current, Non-Repetitive
of
On-State Current, Repetitive
stg
...............................................................
VOL
T J = ·40oC
.......................................................
•......•........•.......••......•....•.••.............
J
PEAK
TAGE,
100
200
300
400
500
600
...............•...................•................
PG(AV)
OFF·STATE
VDRM(1)
to
+125°C
Volts 100 Volts
...............................
...............................
...................................................
ALLOWABLE RATINGS
........................................
REPETITIVE
VOLTAGE,
TJ
(60
TSM
(50 Hz)
TSM
....................................
PEAK
REVERSE
VRRM
o
= ·40
C
to
+125°C
200
300
400
500
600 720
Hz)
........................
.........................
(1)
NON·REPETITIVE
REVERSE
2,850
4,150
VOLTAGE,
TJ = 125°C
150 Volts
300
400
500
600
(RMS Ampere)2 Seconds
(RMS Ampere)2 Seconds
_40°C
_40°C
125 - 150 Lb.-In.
PEAI(
VRSM(1)
110
Amperes
1000 Amperes
920
Amperes
200
AIMS
100
AIMS
2 Watts
to
+lS0°C
to
+12SoC
17
14.1
N-m
t
t
I
tdi/dt
ratings established in accordance with EIA-NEMA
20
ohms
gate trigger source with 0.5
)is
short circuit trigger current rise time.
Standard
701
RS-397, Section 5.2.2.6
for
conditions
of
max. rated VDRM; 20 volts,

C49
TEST
Repetitive
and
Thermal
Critical
Off-State Voltage (Higher
values
switching)
DC Gate Trigger
DC Gate Trigger Voltage
Peak
Conventional
Commutated
Time
Voltage)
Conventional
Commutated
Time
Diode)
',Consult factory for maximum
Peak Reverse
Off-State
may
On-State Voltage
(with
(with
Current
Resistance
Rate-of-Rise
cause device
Current
Circuit
Turn-Off
Reverse
C49 -10
C49
- 20
C49 - 10
C49
- 20
Circuit
Turn-Off
Feed ba ck
C49
C49
10
20
of
SYMBOL
IRRM
and
IORM
ReJe
dv/dt
IGT
V
VrM
tq
tq(diodc)
turn-olT
CHARACTERISTICS
MIN.
-
- -
200
Higher
- -
GT
- -
- -
0.25
- -
-
-
-
times for these conditions
TYP.
7
-
minimum dv/dt selections
8 10
15
13
20
-
20
3S
MAX.
12
.3S
-
ISO
300
12S
3.0 Vdc
3.S
-
I
3.0 Volts
20
t
t
t
i'
UNITS
rnA
DC/Watt
V //lsec
available
mAdc
/lsec
/lsec
T
=
-40°C
J
V =
VORM
J un ction-to-Case
T
= +12SoC,
J
Using Linear
Waveform.
Exponential
- consult factory.
+2SoC,
Te
=
Te
Te
Te
Te
Te
Te
wide pulse.
(1)
(2)
(3)
(4)
(S)
(6)
(7)
(8)
-40°C,
=
= +12SoC,
+2SoC,
=
AO°C,
=
= + 12SoC,
= +2SoC,
Te
= +12SoC
IT
= ISO Amps.
V
=
SO
R
V
ORM
Ra
te-of-rise
voltage
Commutation
Repetition
Gate
bias during
o volts, 100
(1)
Te
(2)
(3)
( 4) V
(S)
(6)
(7)
(8)
= +12SoC
IT
= ISO Amps.
V
=
R
DRM
Rate-of-rise
voltage
Commutation
Repetition
Gate bias during
o volts, 100
(1)
Te
(2)
(3)
(4)
(S)
(6)
(7)
(8)
= +12Soc
IT
= ISO Amps.
V
= 1
R
V
DRM
Rate-or-rise
voltage
Commutation
Repetition
Gate bias during
o volts, 100
TEST
CONDITIONS
to
+12SoC
= V
RRM
Gate
Open. V
or
Exponential
dv/dt
= V
Vo
=
Vo
= 6 Vdc, RL = 3
Vo = 6Vdc,
Vo
= 6 Vdc, RL = 3
Vo
= 6 Vdc, RL = 3
Rated
ITM
= 500 Amps. Peak,
Duty
Cycle ~ 1
Volts
(Reapplied)
=
SO
(Reapplied)
=
(Reapplied)
=
Min.
of
reapplied off-state
20
V//lsec (linear)
di/dt
rate
ohms
Volts
of
reapplied off-state
200
V //lsec (linear)
di/dt
rate
ohms
Volt
of
reapplied off-state
200V
//lsec (linear)
di/dt
Rate = 1 pps
ohms
ORM
Rising
O
:M (.632)
6Vdc,
RL = 3
RL = 3 Ohms
V
, RL = 1000 Ohms
ORM
%.
= S Amps//lsec
= 1 pps.
turn-off
Min.
= 5 Amps//lsec
= 1 pps.
turn-off
= S Amps//lsec
turn-off
=
Rated,
Ohms
Ohms
Ohms
Ohms
1
interval =
interval =
interval =
ms.
I
702

1000
~88
00
600
W
500
~
400
a.
::;;
300
..:
I
200
I-
Z
W
0:
0:
100
a
80
W
70
I-
60
..:
50
~
40
~
30
'"
;;'j
20
a.
10
2530
--
r-.
l"-
I--
1.
I""'---.
r-.....
i"'-
~
10000
50
80100
MAXIMUM
CURRENT
........
...............
5000
......
.........
......
2500
200
300
PULSE BASE WIDTH
ALLOWABLE
VS. PULSE
......
.....
.......
"iooo
500
SINE
......
WIDTH
WAVE
......
""":U(SE:S I
i"'-
~400
r-
1000
2000
-I'S
PEAK
(TC = 65°C)
CURRENT
PE:I?
_
r-..
SE:C
~
5000
ON-STATE
r-
f---
-
10000
RATING
DATA
C49
1000
800
700
00
600
~
500
W
400
a.
::;;
300
..:
1-1-
I
200
I-
Z
W
1--
0:
g;
100
u
80
w
70
~
60
I-
50
'f
40
~
30
'"
;;'j
20
a.
10
25304050
1000
800
700
00
600
~
500
~
400
~
300
........
~
200
z
....
:-.....
W
0:
0:
100
:::>
r-..
u
BO
w
70
I-
60
<!
f'....
50
I-
00
40
Z
0
30
<!
'"
20
w
a.
~~
I";;f-:Qo",
10
25304050
3.
II'"
Pc.,
.....
..............
t-
--
.....
2.
~500
.....
5000
80100
MAXIMUM
CURRENT
..........
-
-~
.....
1'-...
.....
..........
....
"
'.0
"
~O"
"'s,
ENERGY PER PULSE FOR
.....
:-.....
.....
" "
.....
i'.."
....
"~,i"-,,,
~.o",
"""
.;.f?1
.........
rs06 "-
"
"
i'.
~
80100
PULSES (TJ = 125°C)
~.sE:
~P
"'-
'--J
200
300
PULSE BASE
ALLOWABLE
VS. PULSE
........
......
'~6~
"
.....
q","
..........
~I
"
i'..
..........
['..
~
,
"
200300
PULSE BASE
,"""
500
........
.s~
~
Co
~D
1000
I"
400
500
1000
WIDTH-I'S
PEAK
WIDTH
~
q"
'"
1"'-..
" "
"
"-
WIDTH-I'S
'.s
r--..
~<",o
'"
'"
'""
"':::~r-.
"'-..
'"
~
"
1000
,,""
SINUSOIDAL
......
"
i"-
..........
60
2000
(Tc
5000
ON-STATE
= 90°C)
10000
v<.s'~
~
"-
"
,
" :,
"-
"-
"-
"-
'"
.......
2000
~"'~
5000
10000
'"
703
NOTES:
(Pertaining
1.
Switching
2.
Maximum
3. Reverse
4.
Required
20
repetitive
20
repetitive rating .
RC
5.
If
the
circuit
constructed
ployed;
then
0.5
}.lsec
risetime.)
If
the
circuit
source
(20V - 20.0.),
the
total
the
long
20.0., 0.1
to
Sine
volts,
volts,
Snubber
di/dt
snubbers
the
di/dt
device
term
}.lsec
and
voltage;
ckt.
dv/dt
voltage
gate
drive:
20
ohms,
rating.
40
ohms,
ckt. ; .25
remains
"soft"
exceeds
di/dt
repetitive
riseti me.)
Rectangular Wave
400
volts .
; 200 volts/}.lsec .
applied;
using
tr ; .1
must
VR ~ 400V.
.1
}.lsec
.5
}.lsec
}.If,
below
the
components
gate drive
30
amps/}.ls,
}.lS,
be
checked
Ii
mit
for
risetime
risetime for
5.0..
30
must
Current
for
amps/}.ls,
is
sufficient.
then
be used. In addition
to
stiff gate source. (20V,
Ratings)
100
amps/}.lsec
30
amps/}.lsec
and
normally
specified are
(20V, 40.0.,
the
stiff
insure
that
em-
gate
it
is

1000
800
700
Ul
600
~
500
:t
400
~
300
~
200
z
W
'"
100
:::>
'"
u
W
I-
<t
IUl
,
z
0
""
<t
W
u.
1000
g:
SOO
::;;
<t
I
500
I-
400
z
W
300
'"
:::>
200
'"
u
W
~
I-
100
'!'
z
o
Ul
6
~
<t
!2
<t
IUl
z
~
~
i~
';t
~
~
80
70
60
50
40
30
20
80
50
40
30
20
10
10
,
.........
10
10.
o
12.
5,000
4,000
3,000
"
.........
·0
~S
20
304050
ENERGY
AND
INSTANTANEOUS
MAXIMUM
---
~
2,000
WUl
I-W
<t'"
LL""W
...JUlU.
<tz::;;
:x:o<t
",wI-
<t~z
w;;:w
w
u'
'"
z'"
-:::>
U
1,000
r
14. SUB-CYCLE SURGE
ON-STATE
......
...
,
i'
I'
r--~~
'"
1'"
'0
'OS
<"S
~
"
"
'"
80100
200300
PULSE 8ASE
"'"
PER PULSE VS.
PULSE
WIDTH
TJ =
II
I
125°C/
1.0
-
~
1.5
25°C
I
I
2.0
ON-STATE
ON-STATE
---
INITIAL
~
2 3 4 6
PULSE SASE WIDTH -
CURRENT
,
......
"
"
""
,{(<"S
"'-
"'"
125°C
i'
'I'S.I
~
i'.
~
'I.~S-~'
-'"
~O
"
'"
~~
"-
"-
I'
500
WIDTH-I'S
./'
"-
,
"
"~,,
1000
PEAK
(di/dt
= 5A/llsec)
/
/'
If
3.0
VOLTAGE - VOLTS
CHARACTERISTICS
f--
=
-40°C
...........
1
-
TO
.........
mS
2
t
RATING
f..--
T
J
~
(NON-REPETITIVE)
AND
1
'&
" r(C'_1
I"...
~u<
r--.
~
"'-
"
"'-
,
i'..
4.0
"
"1'1'\..
~
I'\..
5000
"I'\..
2000
CURRENT
-
+125°C
.........
I-.....
8
,o-r-
~
"'-",
I'\..
"'-
'r-..
b-
......
10
'---
1"\
10000
5.0
Ul
In
::;;
0
...J
:::>
0
U
'i'
W
L')
<t
'"
:x:
U
0
W
a:
W
>
0
U
W
0::
...
,
G
W
~
'"
30
I
I
11.
13.
NOTES:
1. Locus
2.
3.
2 5
TYPICAL
INSTANTANEOUS GATE CURRENT - AMPERES
GATE
TRIGGER
of
gate
possible
shown
current
boundaries
Rectangular
Tp
10
REVERSE
RECOVERED CHARGE
(TJ = 125°C)
POWER
dc
at
gate
pUlses.
pulse
20
di/dt
-
A/~S
CHARACTERISTICS
RATINGS
trigger
the
points
various
width.
50
lies
case
temperatures.
100
DATA
outside
C49
AND
the
705

C49
I-
~
"-
u
.
I
W
U
Z
<t
o
W
Q.
~
.1
<t
::;;
a:
w
:r:
l-
I-
Z
w
(()
Z
<t
a:
I-
.0
.001
1/
/
I
15.
l,/v
'"
.01
TRANSIENT
JUNCTION-TO-CASE
v
.....
.1
TIME
- SECONDS
THERMAL
10
IMPEDANCE
INCHES
SYM
MIN.
MAX.
MIN.
A 1.020
6
C
D
E
F
G
H
J
K
NOTES:
I.
GATE a AIR
2. FLEXIBLE
3.
ONE
HARDWARE
4.
"R"
5.
"T"
WITHIN
6. ANGULAR ORIENTATION
1.140
.390
.500
1.750
1.570
6.000
6.390
7,500
6.850
797
.627
.140
.150
-
.300
.500
.610
.281
.260
CATHODE
COPPER
NUT
AND
IS
DIM.
IS
DIA.
DIM. IS AREA
2.5
THREADS
25.90
39.67
152.40
173.99
ONE
STEEL,
OF
20.24
12.70
OF
METRIC
MM
MAX.
26.96
12.70 M
9.90
44.45
162.31
190.50
21.01 R
3.61
3.55
7.62
15.49
7.14
6.60
LEADS
SUPPLIED
LEAD.
LOCKWASHER SUPPLIED WITH
CAD
PLATED.
EFFECTIVE SEATING
UNTHREADED PORTION. COMPLETE
OF
SEATING
OF
TERMINALS
SYM
MIN.
L
.330
.275 .325
N
.065 .095
P
.640
Q
.425
.920
T -
V
1.052
LIGHTLY TWISTED
PLANE.
INCHES
MAX.
-
.910
.499
-
.060
1.063
AREA.
IS
UNDEFINED.
EACH
OUTLINE
METRIC
MM
MIN.
MAX.
6.36
-
6.96
6.26
1.65
2.41
23.11
21.33
10.79
12.67
23.36
-
- 1.57 5
26.72
27.00
TOGETHER.
UNIT.
MATERIAL
THDS.
NOTES
GLk
J
~
rr=-
4
ARE
~~EENOTE2
!~
1
N
OF
DRAW!(\JG
E
;;~~
~~:--.
I·
MODEL
C49
TERMINAL
CD
GATE
~L-l
D
TERMINAL TERMINAL
®
AUX
CATHODE
CATHODE
®
+
-SEATING
TERMINAL
®
ANODE
-
PLANE
S
THREAD SIZE
1/220UNF-2A
I
MODEL
C49-2
NOTES'
I.
ONE
NUT
OF
HARDWARE
2.
"T"
DIM.
WITHIN
3. ANGULAR ORIENTATION
TERMINAL
AND
ONE
IS
STEEL, CAD PLATED.
IS
AREA
OF
2.5
THREADS
GATE
LOCK
TERMINAL
CD
CATHODE ANODE
WASHER SUPPLIED WITH
UNTHREADED PORTION. COMPLETE THDS. ARE
OF
SEATING PLANE.
OF
TERMINALS
@
+
IS UNDEFINED.
TERMINAL
@)
-
EACH
S
THREAD SIZE
1/2-20
UNF-2A
UNIT. MATERIAL
SYM
706
INCHES
MIN.
A
1.020
B
.390
C
1.460
D 1.660
E .312
F
.797
G
.060 .075
H
.365
.445
J
K
.198
MAX.
1.140
.5qO
REF
1.800
REf
.627
.415
.465
.212
METRIC
MIN.
25.90
9.90
7.
42.16
7.92
20.24
1.52
9.77
11.30
5.02
92
MM
MAX
28.96
12.70
REF.
45.72
REF.
21.01
1.91
10.54
12.32
5.36
SYM.
L
N
P
Q
T
V
INCHES
MIN.
MAX
.590
.640
.056 .070
.640
.910
.425
.499
.01;0
-
1.052
1.063
METRIC
MIN
14.96
1.47
21.33
10.79
-
26.72
MM
MAX.
16.26
1.76
23.11
12.67
1.52
27.0C
NOTES
2