Powerex C49 Data Sheet

HIGH SPEED

Silicon

600

The

General Electric C49 Silicon Controlled Rectifier

Controlled

VOLTS

device designed for power switching at high frequencies.

FEATURES:

..

Fully characterized for

..

High dvldt

..

Excellent surge and e t ratings providing easy fusing.

o Rugged hermetic package.

with

o Choppers 0

..

Inverters

operation

selections available.

Equipment

in inverter

designers can use

Induction

..

High

and

chopper

the

Frequency

C49 in demanding applications, such as:
Heaters

Rectifier

110

ARMS

is

an all-diffused

applications.

C49

Lighting •

..

Cycloconverters
DC

to

DC Conversion

C49

C49··2

MAXIMUM

REPETITIVE

TYPES

C49AlO, C49A20
C49B10,
C49ClO, C49C20
C49DlO, C49D20
C49E10,
C49M10, C49M20

1 Half sinewave waveform, 10 ms max. pulse width.

RMS On-State Current,
Peak One Cycle Surge (Non-Repetitive) On-State Current, I
Peak One Cycle Surge (Non-Repetitive) On-State Current, I
et

(for

et

(for
Critical Rate-of-Rise
Critical Rate-of-Rise

Average Gate Power Dissipation,

Storage Temperature, T
Operating Temperature, T
Stud

Torque

C49B20

C49E20

IT(RMS)

fusing) for times ~ 1.5 milliseconds
fusing) for times ~ 8.3 milliseconds

of

On-State Current, Non-Repetitive

of

On-State Current, Repetitive

stg

...............................................................

VOL

T J = ·40oC

.......................................................

•......•........•.......••......•....•.••.............

J

PEAK

TAGE,

100
200
300
400
500
600

...............•...................•................

PG(AV)

OFF·STATE

VDRM(1)

to

+125°C

Volts 100 Volts

...............................

...............................

...................................................

ALLOWABLE RATINGS

........................................

REPETITIVE

VOLTAGE,

TJ

(60

TSM

(50 Hz)

TSM

....................................

PEAK

REVERSE

VRRM

o

= ·40

C

to

+125°C

200
300
400

500

600 720

Hz)

........................

.........................

(1)

NON·REPETITIVE

REVERSE

2,850
4,150

VOLTAGE,

TJ = 125°C

150 Volts
300
400
500
600

(RMS Ampere)2 Seconds
(RMS Ampere)2 Seconds

_40°C
_40°C

125 - 150 Lb.-In.

PEAI(

VRSM(1)

110

Amperes

1000 Amperes

920

Amperes

200

AIMS

100

AIMS

2 Watts

to

+lS0°C

to

+12SoC

17

14.1

N-m

t
t

I

tdi/dt

ratings established in accordance with EIA-NEMA

20

ohms

gate trigger source with 0.5

)is

short circuit trigger current rise time.

Standard

701

RS-397, Section 5.2.2.6

for

conditions

of

max. rated VDRM; 20 volts,

C49

TEST

Repetitive
and

Thermal
Critical

Off-State Voltage (Higher
values
switching)

DC Gate Trigger

DC Gate Trigger Voltage

Peak

Conventional
Commutated
Time
Voltage)

Conventional

Commutated

Time

Diode)

',Consult factory for maximum

Peak Reverse

Off-State

may

On-State Voltage

(with

(with

Current

Resistance

Rate-of-Rise

cause device

Current

Circuit

Turn-Off

Reverse

C49 -10

C49

- 20

C49 - 10
C49

- 20

Circuit

Turn-Off

Feed ba ck

C49
C49

10

20

of

SYMBOL

IRRM

and

IORM

ReJe

dv/dt

IGT

V

VrM

tq

tq(diodc)

turn-olT

CHARACTERISTICS

MIN.

-

- -

200

Higher

- -

GT

- -

- -

0.25

- -

-

-

-

times for these conditions

TYP.

7

-

minimum dv/dt selections

8 10

15

13
20

-

20
3S

MAX.

12

.3S

-

ISO
300
12S

3.0 Vdc

3.S

-

I

3.0 Volts

20

t
t

t

i'

UNITS

rnA

DC/Watt

V //lsec

available

mAdc

/lsec

/lsec

T

=

-40°C

J

V =

VORM
J un ction-to-Case
T

= +12SoC,

J

Using Linear
Waveform.

Exponential

- consult factory.
+2SoC,

Te

=

Te
Te

Te
Te

Te
Te

wide pulse.

(1)

(2)

(3)
(4)
(S)

(6)

(7)

(8)

-40°C,

=
= +12SoC,

+2SoC,

=

AO°C,

=
= + 12SoC,

= +2SoC,

Te

= +12SoC

IT

= ISO Amps.

V

=

SO

R

V

ORM

Ra

te-of-rise

voltage
Commutation
Repetition
Gate

bias during

o volts, 100

(1)

Te
(2)
(3)
( 4) V
(S)

(6)

(7)

(8)

= +12SoC

IT

= ISO Amps.

V

=

R

DRM

Rate-of-rise
voltage
Commutation

Repetition
Gate bias during

o volts, 100

(1)

Te

(2)
(3)
(4)
(S)

(6)

(7)

(8)

= +12Soc

IT

= ISO Amps.

V

= 1

R

V

DRM

Rate-or-rise
voltage

Commutation

Repetition

Gate bias during

o volts, 100

TEST

CONDITIONS

to

+12SoC

= V

RRM

Gate

Open. V

or

Exponential

dv/dt

= V

Vo

=

Vo

= 6 Vdc, RL = 3

Vo = 6Vdc,

Vo

= 6 Vdc, RL = 3

Vo

= 6 Vdc, RL = 3

Rated

ITM

= 500 Amps. Peak,

Duty

Cycle ~ 1

Volts

(Reapplied)

=

SO

(Reapplied)

=

(Reapplied)

=

Min.

of

reapplied off-state

20

V//lsec (linear)

di/dt

rate

ohms

Volts

of

reapplied off-state

200

V //lsec (linear)
di/dt

rate

ohms

Volt

of

reapplied off-state

200V

//lsec (linear)

di/dt

Rate = 1 pps

ohms

ORM

Rising

O

:M (.632)

6Vdc,

RL = 3

RL = 3 Ohms

V

, RL = 1000 Ohms

ORM

%.

= S Amps//lsec

= 1 pps.

turn-off

Min.

= 5 Amps//lsec

= 1 pps.

turn-off

= S Amps//lsec

turn-off

=

Rated,

Ohms
Ohms

Ohms
Ohms

1

interval =

interval =

interval =

ms.

I

702