Powerex C457, C458 Data Sheet

5.2

C457

AMPLIFYING

Gate

Condensed Electrical And Thermal Characteristics And Ratings

GETYPE
CONSTRUCTION

SPECIFICATIONS

I Voltage Range

Forward Conduction

Max. forward conduction sinusoidal:

I(RMS)

I

TSM

I2t
RSJC

tq

QRR

dildt
T

J

dV/dt

lOT

VGT

V

TM

RSJC

Package Outline No.

Max. Mounting Force

Expanded Electrical Characterization, see page:

@Tc = 65°C,
@60Hz.
@600Hz.
@ 1000 Hz. 1600
@ 1200
@2500Hz.

@5000Hz.
@ 10,000 Hz.
Max. peak one-cycle, non- 50 Hz. 18,000 15,000

repetitive surge current (A)
Max. I

Max. thermal impedance (OC/w)
Tum-off

V

~

R

@ 20V I
@ 100V/jLsec reapplied
@ 200V/jLsec reapplied
@

400V/jLsec reapplied -

Max. reverse recovered charge (jLc), T
Critical rate-of-

rise

of
Junction operating temperature range (OC)
Min. critical rate-oF-rise

voltage, exponential to

@ Max. T

Max. required gate current to trigger (rnA)

@

-40°C

@

+25°C

Max. required voltage to
trigger (V) from

Max. forward voltage
drop for the
current
range:

Transient thermal

resistance
time:

50% duty (A)

Hz.

2

t for fusing 1.5 msec (A2sec)

time @ 0.8

50V

(jLsec)

jLsec

reapplied -

on-state current

(V/jLs)

J

For

-40°C

2

V

DRM

(AI

of

0.8 V DRM

to +

1

1600

and

jLs)

off-state

125°C

INVERTER

TO

SCRs

2000

AMPERES

500-1400 500-1400

-

2000 1600

1800 1600

1500

750

-

-

60

T

Hz.

J

18,700

625,000

.023 .023

16,000

420,000

-

40

=

25°C

J

IMIN(A)
IMAX(A)

A 1.5

B

C

0 .03 .005

TM1N(S)
TMAX(S)

F

G

Lbs

KN

300 65

800 800

-40

0

to + 125

400 400

400
200

100

10000 10000

-.2

.00002 .0003

.001 .001

.055 .055

308 308

6000 6000

26.7

-40

5 5

.01 .01

.63 .63

229

-

1600
1600
1400
1250

-

-

-

25

-

to + 125

400
200

100

.29
.14

26.7
230

308

0

1. Voltage Drop Model: V F = A +

2. Transient Resistance Model: R8JC =

B'

LN(I) + C

F·

to

1+

O'J'I.

140

5.3

Expanded Electrical Characterization

I

C457

I

t-

Z

I1J

a:

3

~

10

(,)

I1J

l-

f!

<J)

,

Z

•

o

.0;

""

W

0.

,[

1.

MAXIMUM

<J)

I1J

a:

Ul

0.

~

!I

.0;

,

I-

I

Z

UJ

It:

g:;

10:1

(,)

I1J

~

I-

I

'"

Z

o

..

""

I1J

Il.

, L

2.

MAXIMUM

4

10

'"

I1J

It:

W

Q.

~

..

,

I

I-

Z

I

w

I

a::

~

10

3'

u

I1J

~

I-

,

'"

z

o

""

«

w

0.

10

3.

ENERGY

SINUSOIDAL

I

5000

10.006

PULSE BASE WIDTH - MICROSECONDS

ALLOWABLE PEAK ON-STATE CURRENT

VS.

PULSE

~.

.

SOOO

10,000

I

PULSE SASE WIDTH - MICROSECONDS

ALLOWABLE

VS.

I

II-

1

PULSE BASE WIDTH - MICROSECONDS

PER

CURRENT

~:::ri7(sl

.1

-~

2500

--

.-

WIDTH

r---.L

Et-

I

2500

I

2

10

PEAl<

PULSE

PULSE

WIDTH

-

T--

2

10

FOR

-.........

~~

0.25

..........

SINUSOIDAL

WAVEFORMS

I I

ii':

~~

1'~00;'0

'l!:~

8~

I r

I

Vs = 900V
VR S 900V
RC

SUBSER:

Tc

= 6sic I

I

l!ln,

I

I

0.2Sp.F

-

1

I

(T c

=:

65°C)

r--.

"'U(.s:

I

~'"

I'-

r--.,

~I\'

~c

'~~

1

.1.

Vs = 900V
VIIS

900V

~~

:~~~~ER:

15n,

I I

I

II

I

I

3

10

ON-STATE CURRENT

(T c

=:

900CI

...........

I

4-~

'-

7"..8.

IO-'l!:C

O

I'--

s~

~~~

"I

K0~~v<~~

"'-

'r--..

0.5

,

~

•

""-

""

"-

"'"

N"

II

01\10

+-

'~

0.2SP.~_f-

,

"-

"-

"

'"

1"-

,

",,-

"'l

"-

TRAPEZOIDAL

<J)

I1J

a::

w

a.

~

,

.0;

5i---+--+-+-

I

I-

Z

W

It:

a:

:::>

u

Ul

~

I

I-

I

'"

2i--~--~--~~--+_

~

..

"

....

0.

103

'--_'----'_L-.L

1

10

4.

MAXIMUM

VS.

r

I1J

'"

It:

I1J

0.

~

« S

I

I-

Z

w

a::

a:

=>

u

UJ

!:(

I-

~

2

o

.0;

"

w

a.

,I

5.

MAXIMUM

VS.

\i\

3

10

4

10

6.

ENERGY

CURREI\lT

___

-'--_-'---'---'-'.,-----L_--'----L--"-J

2

10

PULSE BASE WIDTH MICROSECONDS

ALLOWABLE PEAK ON-STATE CURRENT

PULSE

WIDTH

r-....

WITH

(T

'\.

N

"

-......

"-

-....

I

1'1

ALLOWABLE PEAK ON-STATE CURRENT

PULSE

PER

WITH

'"

"~

00

is:

"-

~oo

l\

I

2

10

PULSE BASE WIDTH ~ MICROSECONDS

WIDTH

PULSE BASE WIDTH MICROSECONDS

WITH

(T

102 10

PULSE FOR SINUSOIDAL PULSES

ANTI-PARALLEL DIODE

WAVEFORMS

3

10

ANTI-PARALLEL DIODE

=

65°C)

c

'\.

r'-..

'\.

\.

\.

f\

\.

00

~

Vs

VII

Re SNUBBER:
DOUBLE SlOE COOLED

Tc

i9rlJ

ANTI-PARALLEL DIODE

=:

90°C)

c

,,~

~

\

\

1\

,\0 0

~)'

1\

"-

900V

r----.

ssov I

ISn,

3

10

3

I

~.S'

,~

l'

V"'Cl.--f-

~

0.2SI'F

I

~

I

I

I

i

229