Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Solid state relay, hybrid IC
BCR12CS
•IT (RMS) ......................................................................12A
•V
DRM ..............................................................400V/600V
•I
FGT !, IRGT !, IRGT # .........................30mA (20mA)
✽5
Symbol
V
DRM
VDSM
Parameter
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
✽1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
Symbol
I
T (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, T
c=98°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Ratings
12
120
60
5
0.5
10
2
–40 ~ +125
–40 ~ +125
1.2
✽1. Gate open.
231
4
TYPE
NAME
VOLTAGE
CLASS
10.5 MAX
5
1
0.8
4.5
1.3
0.5
3.0
+0.3
–0.5
0
+0.3
–0
(1.5)
1.5 MAX
1.5 MAX
8.6±0.3
9.8±0.5
2.6±0.4
4.5
∗
OUTLINE DRAWING
Dimensions
in mm
TO-220S
24
1
3
1
2
3
4
T
1
TERMINAL
T2 TERMINAL
GATE
TERMINAL
T
2
TERMINAL
∗
Measurement
point of case
temperature
Feb.1999
10023 5710
1
80
40
23 5710
2
44
120
160
200
60
20
100
140
180
0
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
Tj = 125°C
Tj = 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.The contact thermal resistance R
th (c-f) in case of greasing is 1.0°C/W.
✽5.High sensitivity (I
GT≤20mA) is also available. (IGT item 1)
Test conditions
Voltage
class
8
12
V
DRM
(V)
400
600
Min.
—
10
—
10
Commutating voltage and current waveforms
(inductive load)
(dv/dt) c
Symbol
R
L
R
L
Unit
V/µs
1. Junction temperature
T
j=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c=–6A/ms
3. Peak off-state voltage
V
D=400V
Symbol
I
DRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
✽2
Gate trigger current
✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
T
j=125°C, VDRM applied
T
c=25°C, ITM=20A, Instantaneous measurement
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=125°C, VD=1/2VDRM
Junction to case
✽4
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Max.
2.0
1.6
1.5
1.5
1.5
30
✽5
30
✽5
30
✽5
—
1.8
—
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
PERFORMANCE CURVES
Feb.1999
10
0
2310
1
5710223 5710323 5710
4
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
VGD = 0.2V
PGM = 5W
VGM = 10V
VGT = 1.5V
IGM = 2A
I
RGT IIFGT I, IRGT III
P
G(AV)
=
0.5W
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
I
FGT I
I
RGT I, IRGT III
TYPICAL EXAMPLE
32
24
20
12
4
0
16820
4 6 10 12 14
8
16
28
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
16820
4 6 10 12 14
40
80
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
2.2
2.4
0
2.0
1.8
1.6
1.4
1.2
0.6
0.4
0.2
0.8
2310
–1
5710023 5710123 5710
2
2310
2
5710
3
1.0
2
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
100 (%)
GATE TRIGGER VOLTAGE
(
T
j
= t°C
)
GATE TRIGGER VOLTAGE
(
T
j
= 25°C
)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Feb.1999
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
10
1
TYPICAL EXAMPLE
14040–40–60
–20 0 20 60 80 100120
160
120
100
60
20
0
40
80
140
TYPICAL EXAMPLE
14040–40–60
–20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
TYPICAL EXAMPLE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
160
120
100
60
20
0
3.21.60
0.8 1.2 2.0 2.4 2.8
40
80
140
0.4
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
160–40 0 40 80 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
2
+
, G
–
TYPICAL
EXAMPLE
T
2
+
, G
+
T
2
–
, G
–
TYPICAL
EXAMPLE
DISTRIBUTION
160
120
100
60
20
0
16820
4 6 10 12 14
40
80
140
60 60 t2.3
120 120 t2.3
100 100 t2.3
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALL FINS ARE COPPER
AND ALUMINUM
100 (%)
HOLDING CURRENT
(
T
j
= t°C
)
HOLDING CURRENT
(
T
j
= 25°C
)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT
(
T
j
= t°C
)
REPETITIVE PEAK OFF-STATE CURRENT
(
T
j
= 25°C
)
100 (%)
BREAKOVER VOLTAGE
(
T
j
= t°C
)
BREAKOVER VOLTAGE
(
T
j
= 25°C
)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Feb.1999
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE
(
dv/dt = xV/µs
)
BREAKOVER VOLTAGE
(
dv/dt = 1V/µs
)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT
(
tw
)
GATE TRIGGER CURRENT
(
DC
)
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
I
RGT III
I
RGT I
I
FGT I
TYPICAL EXAMPLE
2310
1
5710223 5710323 5710
4
120
0
20
40
60
80
100
140
160
# 2
# 1
TYPICAL EXAMPLE
T
j
= 125°C
I QUADRANT
III QUADRANT
10
1
2310
0
5710123 5710223 5710
3
3
2
10
2
7
5
3
2
7
5
7
5
3
2
10
0
TYPICAL
EXAMPLE
T
j
= 125°C
I
T
= 4A
τ = 500µs
V
D
= 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARACTERISTICS
VALUE
VOLTAGE WAVEFORM
CURRENT WAVEFORM
V
D
t
(dv/dt)
C
I
T
τ
t
(di/dt)
C
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
6Ω 6Ω
6Ω
6V 6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
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