POWEREX BCR10CS-12L Datasheet
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Solid state relay, hybrid IC
BCR10CS
•IT (RMS) ......................................................................10A
•V
DRM ..............................................................400V/600V
•I
FGT !, IRGT !, IRGT # .........................30mA (20mA)
✽5
Symbol
V
DRM
VDSM
Parameter
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
✽1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
Symbol
I
T (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, T
c=103°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Ratings
10
100
41.6
5
0.5
10
2
–40 ~ +125
–40 ~ +125
1.2
✽1. Gate open.
231
4
TYPE
NAME
VOLTAGE
CLASS
10.5 MAX
5
1
0.8
4.5
1.3
0.5
3.0
+0.3
–0.5
0
+0.3
–0
(1.5)
1.5 MAX
1.5 MAX
8.6±0.3
9.8±0.5
2.6±0.4
4.5
∗
OUTLINE DRAWING
Dimensions
in mm
TO-220S
24
1
3
1
2
3
4
T
1 TERMINAL
T2 TERMINAL
GATE
TERMINAL
T
2 TERMINAL
∗
Measurement
point of case
temperature
Feb.1999
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
10023 5710
1
40
30
20
10
23 5710
2
44
50
60
70
80
90
100
0
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
Tj = 125°C
Tj = 25°C
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.The contact thermal resistance R
th (c-f) in case of greasing is 1.0°C/W.
✽5.High sensitivity (I
GT≤20mA) is also available. (IGT item 1)
Test conditions
Voltage
class
8
12
V
DRM
(V)
400
600
Min.
—
10
—
10
Commutating voltage and current waveforms
(inductive load)
(dv/dt) c
Symbol
R
L
R
L
Unit
V/µs
1. Junction temperature
T
j=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c=–5A/ms
3. Peak off-state voltage
V
D=400V
Symbol
I
DRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
✽2
Gate trigger current
✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
T
j=125°C, VDRM applied
T
c=25°C, ITM=15A, Instantaneous measurement
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=125°C, VD=1/2VDRM
Junction to case
✽4
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Max.
2.0
1.5
1.5
1.5
1.5
30
✽5
30
✽5
30
✽5
—
1.8
—
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
PERFORMANCE CURVES
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