POWEREX BCR08AS-12 Datasheet

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR08AS

•IT (RMS) .....................................................................0.8A

•V

DRM .......................................................................600V

•I

FGT !, IRGT !, IRGT # ..............................................5mA

•I

FGT # .....................................................................10mA

OUTLINE DRAWING

4.4±0.1

1.6±0.2

2

1

0.8 MIN

1.5±0.11.5±0.1
(Back side)

2

1

3

0.5±0.07

0.4±0.07

3

SOT-89

Dimensions

1.5±0.1

2.5±0.1

3.9±0.3

+0.03

0.4

–0.05

T

1

TERMINAL

1

T

2

TERMINAL

2

GATE TERMINAL

3

in mm

APPLICATION

Hybrid IC, solid state relay,
control of household equipment such as electric fan · washing machine,
other general purpose control applications

MAXIMUM RATINGS

Symbol

V

DRM

VDSM

Symbol

T (RMS)

I
ITSM

2

t

I

PGM
PG (AV)
VGM
IGM
Tj
Tstg

—

✽1.Gate open.

Parameter

Repetitive peak off-state voltage
Non-repetitive peak off-state voltage

Parameter
RMS on-state current
Surge on-state current

2

t

for fusing

I

Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight

✽1

✽1

Commercial frequency, sine full wave 360° conduction, T
60Hz sinewave 1 full cycle, peak value, non-repetitive

Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current

Typical value

Voltage class

12 (marked “BF”)

600
720

Conditions

a=40°C

✽3

Ratings

0.8
8

0.26

1

0.1
6
1

–40 ~ +125
–40 ~ +125

48

Unit

V
V

Unit

A
A

2

A

s

W
W

V
A

°C
°C

mg

Mar. 2002

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Symbol

I

DRM

VTM
VFGT !
VRGT !
VRGT #
VFGT #
IFGT !
IRGT !
IRGT #
IFGT #
VGD
Rth (j-a)

(dv/dt)c

✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.Mounted on 25mm × 25mm × t0.7mm ceramic plate with solder.
✽4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Repetitive peak off-state current
On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage
Thermal resistance

Critical-rate of rise of off-state
commutating voltage

Parameter

✽2

✽2

T

j=125°C, VDRM applied
c=25°C, ITM=1.2A, Instantaneous measurement

T

!

@

T

j=25°C, VD=6V, RL=6Ω, RG=330Ω

#

$

!

@

T

j=25°C, VD=6V, RL=6Ω, RG=330Ω

#

$

T

j=125°C, VD=1/2VDRM

Junction to case

✽4

Tj=125°C

Test conditions

✽3

BCR08AS

LOW POWER USE

Limits

Typ.

Min.

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

0.1

—

—

—

0.5

Max.

1.0

2.0

2.0

2.0

2.0

2.0

10

—

65

—

Unit

mA

V
V
V
V
V

5

mA

5

mA

5

mA
mA

V

°C/W

V/µs

Test conditions

1. Junction temperature
T

j=125°C

2. Rate of decay of on-state commutating current
(di/dt)

c=–0.4A/ms

3. Peak off-state voltage
V

D=400V

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS

1

10

7
5

4
3

2

0

10

7
5

4
3

ON-STATE CURRENT (A)

2

–1

10

012

Tj = 125°C

Tj = 25°C

345

Commutating voltage and current waveforms

SUPPLY
VOLTAGE TIME

MAIN CURRENT

MAIN
VOLTAGE

(inductive load)

(di/dt)c

(dv/dt)c

RATED SURGE ON-STATE CURRENT

10

8

6

4

2

SURGE ON-STATE CURRENT (A)

0

10023 5710

44

1

23 5710

TIME

TIME

V

D

2

ON-STATE VOLTAGE (V)

CONDUCTION TIME

(CYCLES AT 60Hz)

Mar. 2002