POWEREX BCR08AS-12 Datasheet

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR08AS

•IT (RMS) .....................................................................0.8A

•V

DRM .......................................................................600V

•I

FGT !, IRGT !, IRGT # ..............................................5mA

•I

FGT # .....................................................................10mA

OUTLINE DRAWING

4.4±0.1

1.6±0.2

2

1

0.8 MIN

1.5±0.11.5±0.1
(Back side)

2

1

3

0.5±0.07

0.4±0.07

3

SOT-89

Dimensions

1.5±0.1

2.5±0.1

3.9±0.3

+0.03

0.4

–0.05

T

1

TERMINAL

1

T

2

TERMINAL

2

GATE TERMINAL

3

in mm

APPLICATION

Hybrid IC, solid state relay,
control of household equipment such as electric fan · washing machine,
other general purpose control applications

MAXIMUM RATINGS

Symbol

V

DRM

VDSM

Symbol

T (RMS)

I
ITSM

2

t

I

PGM
PG (AV)
VGM
IGM
Tj
Tstg

—

✽1.Gate open.

Parameter

Repetitive peak off-state voltage
Non-repetitive peak off-state voltage

Parameter
RMS on-state current
Surge on-state current

2

t

for fusing

I

Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight

✽1

✽1

Commercial frequency, sine full wave 360° conduction, T
60Hz sinewave 1 full cycle, peak value, non-repetitive

Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current

Typical value

Voltage class

12 (marked “BF”)

600
720

Conditions

a=40°C

✽3

Ratings

0.8
8

0.26

1

0.1
6
1

–40 ~ +125
–40 ~ +125

48

Unit

V
V

Unit

A
A

2

A

s

W
W

V
A

°C
°C

mg

Mar. 2002

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Symbol

I

DRM

VTM
VFGT !
VRGT !
VRGT #
VFGT #
IFGT !
IRGT !
IRGT #
IFGT #
VGD
Rth (j-a)

(dv/dt)c

✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.Mounted on 25mm × 25mm × t0.7mm ceramic plate with solder.
✽4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Repetitive peak off-state current
On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage
Thermal resistance

Critical-rate of rise of off-state
commutating voltage

Parameter

✽2

✽2

T

j=125°C, VDRM applied
c=25°C, ITM=1.2A, Instantaneous measurement

T

!

@

T

j=25°C, VD=6V, RL=6Ω, RG=330Ω

#

$

!

@

T

j=25°C, VD=6V, RL=6Ω, RG=330Ω

#

$

T

j=125°C, VD=1/2VDRM

Junction to case

✽4

Tj=125°C

Test conditions

✽3

BCR08AS

LOW POWER USE

Limits

Typ.

Min.

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

0.1

—

—

—

0.5

Max.

1.0

2.0

2.0

2.0

2.0

2.0

10

—

65

—

Unit

mA

V
V
V
V
V

5

mA

5

mA

5

mA
mA

V

°C/W

V/µs

Test conditions

1. Junction temperature
T

j=125°C

2. Rate of decay of on-state commutating current
(di/dt)

c=–0.4A/ms

3. Peak off-state voltage
V

D=400V

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS

1

10

7
5

4
3

2

0

10

7
5

4
3

ON-STATE CURRENT (A)

2

–1

10

012

Tj = 125°C

Tj = 25°C

345

Commutating voltage and current waveforms

SUPPLY
VOLTAGE TIME

MAIN CURRENT

MAIN
VOLTAGE

(inductive load)

(di/dt)c

(dv/dt)c

RATED SURGE ON-STATE CURRENT

10

8

6

4

2

SURGE ON-STATE CURRENT (A)

0

10023 5710

44

1

23 5710

TIME

TIME

V

D

2

ON-STATE VOLTAGE (V)

CONDUCTION TIME

(CYCLES AT 60Hz)

Mar. 2002

GATE CHARACTERISTICS

2

10

7
5

3

VGM = 10V

2

1

10

7
5

V

GT

3
2

0

10

7

GATE VOLTAGE (V)

5
3

2

–1

10

0

2310

5710123 5710223 5710

I

FGT I

I

RGT I

FGT III

P

G(AV)

= 0.1W

,

, I

RGT III

PGM = 1W

IGM = 1A

VGD = 0.2VI

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE

3

10

7

100 (%)

5
4

3
2

= t°C)

= 25°C)

j

j

2

10

7
5

4
3

2

1

10

GATE TRIGGER CURRENT (T

3

GATE TRIGGER CURRENT (T

–40 0 40 80 120

–60 –20 20

TYPICAL EXAMPLE

I

FGT III

I

FGT I IRGT III IRGT I

60 100 140

GATE CURRENT (mA)

GATE TRIGGER VOLTAGE VS.

JUNCTION TEMPERATURE

3

100 (%)

)

)

= t°C

= 25°C

j

j

T

T

(

(

10

10

7
5

4
3

2

2

7
5

4

V

RGT I VRGT III

TYPICAL EXAMPLE

V

FGT I VFGT III

3
2

1

10

GATE TRIGGER VOLTAGE

GATE TRIGGER VOLTAGE

–40 0 40 80 120

–60 –20 20

60 100 140

JUNCTION TEMPERATURE (°C)

MAXIMUM ON-STATE POWER

DISSIPATION

2.0

1.6

1.2

0.8

0.4

ON-STATE POWER DISSIPATION (W)

0

0.4 0.8 1.2 1.6

360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS

JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

TRANSIENT THERMAL IMPEDANCE (°C/W)

10

10

10

10

2

2310

3

7
5

3
2

2

7
5

3
2

1

7
5

3
2

0

5710323 5710423 5710

JUNCTION TO AMBIENT

JUNCTION TO CASE

–1

2310

5710023 5710123 5710

5

2

CONDUCTION TIME

(CYCLES AT 60Hz)

ALLOWABLE CASE TEMPERATURE

VS. RMS ON-STATE CURRENT

160

CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE

140

NATURAL CONVECTION

120

RESISTIVE,
INDUCTIVE

100

LOADS
80
60
40

CASE TEMPERATURE (°C)

20

2.00

0

0.2 0.6 1.0 1.4

0.4 0.8 1.2

1.60

RMS ON-STATE CURRENT (A)

RMS ON-STATE CURRENT (A)

Mar. 2002

REPETITIVE PEAK OFF-STATE

CURRENT VS. JUNCTION

100 (%)

5

10

)

)
= t°C

= 25°C

j

j

T

T

(

(

REPETITIVE PEAK OFF-STATE CURRENT

REPETITIVE PEAK OFF-STATE CURRENT

TYPICAL EXAMPLE

7
5

3
2

4

10

7
5

3
2

3

10

7
5

3
2

2

10

TEMPERATURE

–20 0 20 60 80 100120

JUNCTION TEMPERATURE (°C)

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

HOLDING CURRENT VS.

JUNCTION TEMPERATURE

3

10

7

100 (%)

5
3

)

)

(

2

= t°C

= 25°C

j

j

T

T

(

2

10

7
5

3
2

HOLDING CURRENT

HOLDING CURRENT

1

14040–40–60

10

JUNCTION TEMPERATURE (°C)

TYPICAL EXAMPLE

14040–40–60 –20 0 20 60 80 100120

LACHING CURRENT VS.

JUNCTION TEMPERATURE

2

10

7

DISTRIBUTION

5
3

2

1

10

7
5

3
2

0

10

7
5

+

+



T

2

10

, G

3
2

–1



TYPICAL

–

–

T

2

, G



EXAMPLE



–

+

T

2

, G



0 40 80 120

LACHING CURRENT (mA)

JUNCTION TEMPERATURE (°C)

BREAKOVER VOLTAGE VS.

RATE OF RISE OF

OFF-STATE VOLTAGE

160

100 (%)

)

TYPICAL EXAMPLE

140

)

120
100

dv/dt = 1V/µs

dv/dt = xV/µs

80

(

(

60

III QUADRANT

40
20

0

BREAKOVER VOLTAGE

BREAKOVER VOLTAGE

0

5710123 5710223 5710

2310

+

–

T

2

, G

TYPICAL EXAMPLE

Tj = 125°C

I QUADRANT

BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE

160

TYPICAL EXAMPLE

140

100 (%)

120

)

)

100

= t°C

= 25°C

j

j

T

T

(

(

80
60
40
20

BREAKOVER VOLTAGE

BREAKOVER VOLTAGE

160–40

0

100120

14040–40–60 –20 0 20 60 80

JUNCTION TEMPERATURE (°C)

COMMUTATION CHARACTERISTICS

1

10

10

7
5

3
2

0

7

TYPICAL
EXAMPLE

j

= 125°C

T

T

= 1A

I
τ = 500µs

D

= 200V

V
f = 3Hz

III QUADRANT

5

MINIMUM

3

CHARAC-

2

10

TERISTICS
VALUE

–1

–1

10

23 5710

COMMUTATING VOLTAGE (V/µs)

3

CRITICAL RATE OF RISE OF OFF-STATE

I QUADRANT

0

23 5710

1

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

Mar. 2002

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH

3

10

7
5

100 (%)

4
3

)

)
tw

DC

2

(

(

2

10

7

I

RGT I IRGT III IFGT I

5

I

4

FGT III

3
2

GATE TRIGGER CURRENT

GATE TRIGGER CURRENT

1

10

10

0

44

23 5710

GATE CURRENT PULSE WIDTH (µs)

TYPICAL EXAMPLE

1

23 5710

GATE TRIGGER CHARACTERISTICS

TEST CIRCUITS

6Ω 6Ω

6V 6V

A

R

V

G RG

TEST PROCEDURE 1

TEST PROCEDURE 2

A

V

6Ω 6Ω

2

6V 6V

TEST PROCEDURE 3

A

V

RG RG

TEST PROCEDURE 4

A

V

Mar. 2002