Power TIP120, TIP121, TIP122 Technical data

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● Designed for Complementary Use with

TIP125, TIP126 and TIP127

● 65 W at 25°C Case Temperature

TIP120, TIP121, TIP122

NPN SILICON POWER DARLINGTONS

DECEMBER 1971 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

TO-220 PACKAGE

(TOP VIEW)

● 5 A Continuous Collector Current

● Minimum h

of 1000 at 3 V, 3 A

FE

B
C
E

1
2
3

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

TIP120

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T

NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V

BE(off)

= 0)

E

= 0)

B

= 0, RS = 0.1 Ω, VCC = 20 V.

TIP121
TIP122
TIP120
TIP121
TIP122

V

V

CBO

CEO

EBO

C

CM

B
tot
tot

stg

L

C

j

2

B(on)

MDTRACA

60
80

100

60
80

100

5 V
5 A
8 A

0.1 A
65 W

2 W

50 mJ

-65 to +150 °C

-65 to +150 °C
260 °C

= 5 mA, RBE = 100 Ω,

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

TIP120, TIP121, TIP122
NPN SILICON POWER DARLINGTONS

DECEMBER 1971 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122

(see Notes 5 and 6)

(see Notes 5 and 6)

V

(BR)CEO

I

CEO

I

CBO

I

EBO

h

V

CE(sat)

V

V

Collector-emitter
breakdown voltage

Collector-emitter
cut-off current

Collector cut-off
current

Emitter cut-off
current
Forward current

FE

transfer ratio
Collector-emitter
saturation voltage
Base-emitter

BE

voltage
Parallel diode

EC

forward voltage

= 30 mA

I

C

IB = 0
(see Note 5)
V

= 30 V

CE

= 40 V

V

CE

= 50 V

V

CE

V

= 60 V

CB

= 80 V

V

CB

= 100 V

V

CB

= 5 V IC= 0 2 mA

V

EB

VCE = 3 V

= 3 V

V

CE

IB = 12 mA

= 20 mA

I

B

= 3 V IC= 3 A (see Notes 5 and 6) 2.5 V

V

CE

= 5 A IB= 0 (see Notes 5 and 6) 3.5 V

I

E

I

B

I

B

I

B

I

E

I

E

I

E

I

C

I

C

I

C

I

C

= 0
= 0
= 0
= 0
= 0
= 0

= 0.5 A
= 3 A
= 3 A
= 5 A

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

60
80

100

1000
1000

0.5

0.5

0.5

0.2

0.2

0.2

V

mA

mA

2
4

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R
R

Junction to case thermal resistance 1.92 °C/W

θJC

Junction to free air thermal resistance 62.5 °C/W

θJA

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

Turn-on time IC = 3 A

t

on

t

Turn-off time 8.5 µs

off

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

V

BE(off)

= -5 V

I

B(on)

= 10 Ω

R

L

= 12 mA

†

I

= -12 mA

B(off)

= 20 µs, dc ≤ 2%

t

p

MIN TYP MAX UNIT

1.5 µs

PRODUCT INFORMATION

2