POWER INT201TF1, INT201PF1 Datasheet

February 1996
Product Highlights
Floating Control Inputs
• Connects directly to INT200 or INT202 HSD outputs
• No external level translators or transformers required
Gate Drive Output for an External MOSFET
• Provides 300 mA sink/150 mA source current
• Can drive MOSFET gate at up to 15 V
• External MOSFET allows flexibility in design for various motor sizes
Built-in Protection Circuits
• Logic inputs include noise rejection circuitry
• Undervoltage lockout
Description
The INT201 high-side driver IC provides gate drive for an external high-side MOSFET switch. When used in conjunction with the INT200 or INT202 low-side drivers, the INT201 provides a simple, cost-effective interface between low-voltage control logic and high-voltage loads.
Built-in noise rejection circuitry shared between the INT201 and the INT200 or INT202 provides reliable operation in the harshest industrial environments. The INT201 is powered from a ground-referenced low-voltage supply. A floating supply is derived from this rail by using a simple bootstrap technique to provide adequate gate drive for the external N-channel MOSFET.
Applications include motor drives, electronic ballasts, and uninterruptible power supplies. The INT201 can also be used to implement full-bridge and multi-phase configurations.
The INT201 is available in 8-pin plastic DIP and SOIC packages.
INT201
High-side Driver IC
Floating Inputs Floating High-side Drive
®
ORDERING INFORMATION
PART PACKAGE TEMP
NUMBER OUTLINE RANGE
INT201PFI P08A -40 to 85°C INT201TFI T08A -40 to 85°C
Figure 1. Typical Application.
Figure 2. Pin Configuration.
PI–285D–091191
HSD2
8
5
7
6
SOURCE
HS OUT
N/C
HSD1
1
4
2
3
V
DDH
N/C
N/C
HV
HS IN
LS IN
INT201
INT200
PI-1764-020196
V
DD
3-PHASE
BRUSHLESS
DC MOTOR
INT201
F 2/96
2
Pin Functional Description
Pin 1:
No connection.
Pin 2:
No connection.
Pin 3:
Level shift input HSD 1 works in conjunction with HSD 2 to provide interface from the low side control logic and to give noise immunity.
Pin 4:
Level shift input HSD 2 works in conjunction with HSD 1 to provide interface from the low side control logic and to give noise immunity.
Pin 5: SOURCE connection. Analog reference
point for the circuit, normally connected to the source of the high side MOSFET.
Pin 6: HS OUT is the output of the MOSFET
driver for the high side.
Pin 7:
No connection.
Pin 8: V
DDH
supplies power to the control logic
and output driver.
INT201 Functional Description
5 V Regulator
The 5 V linear regulator circuit provides the supply voltage for the noise rejection circuitry and control logic. This allows the logic section and the driver circuitry to be directly compatible with 5 V CMOS logic without the need of an external 5 V supply.
Undervoltage Lockout
The undervoltage lockout circuit disables the HS OUT pin whenever the V
DDH
power supply falls below 9.0 V, and maintains this condition until the V
DDH
power supply rises above 9.35 V. This guarantees that the high side MOSFET will be off during power-up or fault conditions.
Noise Immunization Circuit
This circuit provides noise immunity by combining a sampling circuit with a flip-flop to turn on and off the driver only when required to and not when there is noise on the HSD inputs.
Driver
The CMOS driver circuit provides drive power to the gate of the MOSFET used on the high side of the half bridge circuit. The driver consists of a CMOS buffer capable of driving external transistors at up to 15 V. The SOURCE pin is connected to the source of the external MOSFET to establish a reference for the gate voltage.
Figure 3. Functional Block Diagram of the INT201.
HSD1
HSD2
V
DDH
SOURCE
PI-514B-021792
HS OUT
LINEAR
REGULATOR
UV
LOCKOUT
DISCRIMINATOR
DELAY
R
QS
F
2/96
INT201
3
Figure 4. Using the INT200 and INT201 in a 3-phase Configuration.
General Circuit Operation
One phase of a three-phase brushless DC motor drive circuit is shown in Figure 4 to illustrate an application of the INT200/201. The LS IN signal directly controls MOSFET Q1. The
HS IN
signal causes the INT200 to command the INT201 to turn MOSFET Q2 on or off as required. The INT200 will ignore input signals that would command both Q1 and Q2 to conduct simultaneously, protecting against shorting the HV+ bus to HV-.
Local bypassing for the low-side driver is provided by C1. Bootstrap bias for the high-side driver is provided by D1 and C2. Slew rate and effects of parasitic oscillations in the load waveforms are controlled by resistors R1 and R2.
The inputs are designed to be compatible with 5 V CMOS logic levels and should not be connected to VDD. Normal CMOS power supply sequencing should be observed. The order of signal application should be VDD, logic signals, and then HV+.
The INT201 is latched on and off by the edges of the appropriate low-side logic signal (
HS IN
for the INT200 and
HS IN
for the INT202). The high-side driver will latch off and stay off if the bootstrap capacitor discharges below the
undervoltage lockout threshold. Undervoltage lockout-induced turn off can occur during conditions such as power ramp up, motor start, or low speed operation.
Figure 5. High-side On Time versus Bootstrap Capacitor.
PI-1467-042695
HV+
V
DD
LS IN
HV-
INT201
INT200
PHASE 1
PHASE 2
PHASE 3
3-PHASE
BRUSHLESS
DC MOTOR
D1
C1
C2
R1
R2
Q2
Q1
HS IN
1234
8765
1234
8765
1000
0.1
0.01
0.01 0.1 1 10 100
High Side ON Time (ms)
Bootstrap Capacitance (µF)
C
BOOTSTRAP
vs. ON TIME
1
100
PI-566B-030692
10
QG = 20 nC
QG = 100 nC
INT201
F 2/96
4
Figure 6. Using the INT202 and INT201 to Drive a Switched Reluctance Motor.
General Circuit Operation (cont.)
The bootstrap capacitor must be large enough to provide bias current over the entire on time interval of the high-side driver without significant voltage sag or decay. The MOSFET gate charge must also be supplied at the desired switching frequency. Figure 5 shows the maximum high-side on time versus gate charge of
the external MOSFET. Applications with extremely long high-side on times require special techniques discussed in AN-10.
A three-phase switched reluctance motor example using the INT202/201 is given in Figure 6. The LS IN signal directly
controls MOSFET Q1. Unlike the INT200, the INT202 allows both the low and high-side drivers to be on at the same time, as this is required in applications where the load is placed between the low and high-side output MOSFETs.
PI-1468-042695
HV+
V
DD
CONTROL
HV-
1234
8765
1234
8765
INT201
INT202
PHASE 1
PHASE 2
PHASE 3
3-PHASE
SRM
D1
C2
C1
R1
R2
D2
D3
Q2
Q1
F
2/96
INT201
5
Input Current Threshold
Output Voltage, High
Output Voltage, Low
Output Short Circuit Current
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
I
HSD1
, I
HSD2
V
OH
V
OL
I
OS
t
d(on)
t
r
t
d(off)
t
f
Io= -20 mA
Io= 40 mA
VO= 0 V
See Note 1
VO= V
DDH
See Figure 7
See Figure 7
See Figure 7
See Figure 7
mA
V
V
mA
µs
ns
ns
ns
-5 -2.5
V
DDH
-1.0 V
DDH
-0.5
0.3 1.0
-150
300
1.0 1.5
80 120
420 600
50 100
HSD INPUTS
HS OUT
ABSOLUTE MAXIMUM RATINGS
1
V
DDH
Voltage ............................................................16.5 V
Logic Input Voltage ................................... -0.3 V to 5.5 V
HS OUT Voltage............................ -0.3 V to V
DDH
+ 0.3 V
Storage Temperature ..................................... –65 to 125°C
Ambient Temperature ......................................-40 to 85°C
Junction Temperature............................................... 150°C
Lead Temperature
(2)
. ................................................ 260°C
Power Dissipation
PF Suffix (TA = 25˚C) ..........................................1.25 W
PF Suffix (TA = 70˚C) ........................................800 mW
TF Suffix (TA = 25˚C) ..........................................1.04 W
TF Suffix (TA = 70˚C) ........................................667 mW
Thermal Impedance (θJA)
PF Suffix ............................................................. 100°C/W
TF Suffix ............................................................. 120°C/W
1. Unless noted, all voltages referenced to SOURCE, TA = 25˚C
2. 1/16" from case for 5 seconds.
Conditions
Parameter Symbol
(Unless Otherwise Specified) Min Typ Max Units
V
DDH
= 15 V, SOURCE = 0V
TA = -40 to 85°C
INT201
F 2/96
6
0 450
0 300
0.3 1.0
0.3 1.0
8.5 9.0 10
175 350
1.5 3.0
10 16
Dt
P+
Dt
P-
Mt
P+
Mt
P-
V
DDH(UV)
I
DDH
V
DDH
Deadtime (Low Off to High On)
Deadtime (Low On to High Off)
Matching (Low On to High On)
Matching (Low Off to High Off)
Input UV Threshold Voltage
Input UV Hysteresis
Supply Current
Supply Voltage
ns
ns
µs
µs
V
mV
mA
V
NOTES:
1. Applying a short circuit to the HS OUT pin for more than 500 µs will exceed the thermal rating of the package, resulting in destruction of the part.
SYSTEM RESPONSE
UNDERVOLTAGE LOCKOUT
SUPPLY
See Figure 8
See Figure 8
See Figure 9
See Figure 9
Conditions
Parameter Symbol
(Unless Otherwise Specified) Min Typ Max Units
V
DDH
= 15 V, SOURCE = 0V
TA = -40 to 85°C
F
2/96
INT201
7
Figure 9. Matching Test Circuit.
Figure 8. Dead Time Test Circuit.
Figure 7. Switching Time Test Circuit.
PI-1469-042695
15 V
1234
8765
1234
8765
INT201
INT200
47 µF
35 V
0.1 µF
1000 pF
50%
0 V
INPUT
HS OUT
t
d(on)
5 V
15 V
0 V
10%
90%
10%
90%
t
f
50%
t
r
t
d(off)
PI-1470-042695
15 V
1234
8765
1234
8765
INT201
INT200
47 µF
35 V
0.1 µF
1000 pF
1000 pF
0 V
INPUT
LS OUT
Dt
p+
5 V
15 V
0 V
50%
50%
HS OUT
15 V
0 V
Dt
p-
50%
50%
PI-1471-042695
15 V
1234
8765
1234
8765
INT201
INT202
47 µF
35 V
0.1 µF
1000 pF
1000 pF
0 V
INPUT
LS OUT
Mt
p-
5 V
15 V
0 V
50%
50%
HS OUT
15 V
0 V
Mt
p+
50%
50%
INT201
F 2/96
8
1.5
0
0 25 50 75 100 125 150
Junction Temperature (°C)
Power Dissipation (W)
0.5
1.0
PACKAGE POWER DERATING
PF Suffix
TF Suffix
PI-1763-013196
F
2/96
INT201
9
PI-1842-050196
58
41
A
H
G
F
B
E
L
K
J
0 – 15
°
D
C
Dim. inches mm  A .395 MAX 10.03 MAX B .090-.110 2.29-2.79 C .015-.021 0.38-0.53 D .040 TYP 1.02 TYP E .015-.030 0.38-0.76 F .125 MIN 3.18 MIN G .015 MIN 0.38 MIN H .125-.135 3.18-3.43
J .300-.320 7.62-8.13 K .245-.255 6.22-6.48 L .009-.015 0.23-0.38 
(4)
(3)
(3)
Notes:
1. Package dimensions conform to JEDEC specification MS-001-AB for standard dual in­line (DIP) package .300 inch row spacing (PLASTIC) 8 leads (issue B, 7/85).
2. Controlling dimensions: inches.
3. Dimensions are for the molded body and do not include mold flash or other protrusions. Mold flash or protrusions shall not exceed .010 inch (.25 mm) on any side.
4. These dimensions measured with the leads constrained to be perpendicular to package bottom.
5. Pin 1 orientation identified by end notch or dot adjacent to Pin 1.
Note 5
P08A Plastic DIP-8
PI-1845-050196
1
A
H
C
D 
4
B
F
0-8˚ TYP.
J
K
85
E
G
DIM
 A B C D
E F
G 
H
J
K
inches
0.189-0.197
0.050 TYP 
0.014-0.019
0.012 TYP
0.053-0.069
0.004-0.010
0.228-0.244
0.007-0.010
0.021-0.045
0.150-0.157
mm
4.80-5.00
1.27 TYP
0.35-0.49
0.31 TYP
1.35-1.75
0.10-0.25
5.80-6.20
0.19-0.25
0.51-1.14
3.80-4.00
Notes:
1. Package dimensions conform to JEDEC specification MS-012-AA for standard small outline (SO) package, 8 leads, 3.75 mm (.150 inch) body width (issue A, June 1985).
2. Controlling dimensions are in mm.
3. Dimensions are for the molded body and do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .15 mm (.006 inch) on any side.
4. Pin 1 side identified edge by chamfer on top of the package body or indent on Pin 1 end.  
(3)
(3)
T08A Plastic SO-8
INT201
F 2/96
10
Notes
F
2/96
INT201
11
Notes
INT201
F 2/96
12
JAPAN
Power Integrations, K.K. Keihin-Tatemono 1st Bldg. 12-20 Shin-Yokohoma 2-Chome, Kohoku-ku Yokohama-shi, Kanagawa 222 Japan Phone: 81•(0)•45•471•1021 Fax: 81•(0)•45•471•3717
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AMERICAS
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TOPSwitch
are registered trademarks of Power Integrations, Inc.
©Copyright 1994, Power Integrations, Inc. 477 N. Mathilda Avenue, Sunnyvale, CA 94086
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