Power BD241D, BD241E, BD241F Technical data

查询BD241D供应商

● 40 W at 25°C Case Temperature

● 3 A Continuous Collector Current

● 5 A Peak Collector Current

● Customer-Specified Selections Available

BD241D, BD241E, BD241F

NPN SILICON POWER TRANSISTORS

SEPTEMBER 1981 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

TO-220 PACKAGE

(TOP VIEW)

B
C
E

1
2
3

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

BD241D

Collector-emitter voltage (R

Collector-emitter voltage (I

Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T

NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
= 0, RS = 0.1 Ω, VCC = 20 V.

V

BE(off)

= 100 Ω)

BE

= 0)

B

BD241E
BD241F
BD241D
BD241E
BD241F

V

V

CER

CEO

EBO

C

CM

B
tot
tot

stg

L

C

j

2

B(on)

MDTRACA

160
180
200
120
140
160

5 V
3 A
5 A
1 A

40 W

2 W

32 mJ

-65 to +150 °C

-65 to +150 °C
250 °C

= 0.4 A, RBE = 100 Ω,

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS

SEPTEMBER 1981 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

BD241D
BD241E
BD241F
BD241D
BD241E
BD241F

(see Notes 5 and 6)

V

(BR)CEO

I

CES

I

CEO

I

EBO

h

V

CE(sat)

V

h

|hfe|

Collector-emitter
breakdown voltage

Collector-emitter
cut-off current

Collector cut-off
current
Emitter cut-off
current
Forward current

FE

transfer ratio
Collector-emitter
saturation voltage
Base-emitter

BE

voltage
Small signal forward

fe

current transfer ratio
Small signal forward
current transfer ratio

= 30 mA

I

C

IB = 0
(see Note 5)
V

= 160 V

CE

= 180 V

V

CE

= 200 V

V

CE

= 90 V IB= 0 0.3 mA

V

CE

= 5 V IC= 0 1 mA

V

EB

VCE = 4 V

= 4 V

V

CE

= 750 mA IC= 3 A (see Notes 5 and 6) 2.5 V

I

B

= 4 V IC= 3 A (see Notes 5 and 6) 1.8 V

V

CE

= 10 V IC= 0.5 A f = 1 kHz 20

V

CE

= 10 V IC= 0.5 A f = 1 MHz 3

V

CE

V

BE

V

BE

V

BE

I

C

I

C

= 0
= 0
= 0

= 1 A
= 3 A

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

120
140
160

25

5

0.2

0.2

0.2

V

mA

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R
R

Junction to case thermal resistance 3.125 °C/W

θJC

Junction to free air thermal resistance 62.5 °C/W

θJA

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

Turn-on time IC = 1 A

t

on

t

Turn-off time 1 µs

off

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

V

BE(off)

= -3.7 V

I

B(on)

= 20 Ω

R

L

= 0.1 A

†

I

= -0.1 A

B(off)

= 20 µs, dc ≤ 2%

t

p

MIN TYP MAX UNIT

0.3 µs

PRODUCT INFORMATION

2

NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

BD241D, BD241E, BD241F

SEPTEMBER 1981 - REVISED MARCH 1997

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

1000

VCE = 4 V
tp = 300 µs, duty cycle < 2%

100

- DC Current Gain

FE

h

10

0·01 0·1 1·0 10

IC - Collector Current - A

TC = 25°C
TC = 80°C

Figure 1. Figure 2.

TCS631AH

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

10

1·0

0·1

- Collector-Emitter Saturation Voltage - V

V

IC = 100 mA
IC = 300 mA
IC = 1 A

CE(sat)

IC = 3 A

0·01

0·1 1·0 10 100 1000

IB - Base Current - mA

TCS631AB

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

1·0

VCE = 4 V
TC = 25°C

0·9

0·8

0·7

- Base-Emitter Voltage - V

BE

V

0·6

0·5

0·01 0·1 1·0 10

IC - Collector Current - A

Figure 3.

TCS631AC

PRODUCT INFORMATION

3

BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS

SEPTEMBER 1981 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

100

10

1·0

- Collector Current - A

C

I

0·1

SAFE OPERATING AREA

tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation

SAS631AH

BD241D
BD241E

0·01

1·0 10 100 1000

BD241F

VCE - Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs

CASE TEMPERATURE

50

40

30

20

TIS631AA

- Maximum Power Dissipation - W

tot

10

P

0

0 25 50 75 100 125 150

TC - Case Temperature - °C

PRODUCT INFORMATION

4

Figure 5.

BD241D, BD241E, BD241F

Version 1, 18.0 mm. Version 2, 17.6 mm.

NPN SILICON POWER TRANSISTORS

SEPTEMBER 1981 - REVISED MARCH 1997

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

TO220

3,96

ø

3,71

see Note B

see Note C

0,97
0,61

10,4
10,0

1 2 3

1,70
1,07

2,74
2,34

5,28
4,88

2,95
2,54

6,1
3,5

4,70
4,20

1,32
1,23

6,6
6,0

15,90
14,55

14,1
12,7

0,64
0,41

2,90
2,40

NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.

PRODUCT INFORMATION

VERSION 2 VERSION 1

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXBE

5

BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS

SEPTEMBER 1981 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION

6