Power BD241D, BD241E, BD241F Technical data
查询BD241D供应商
● 40 W at 25°C Case Temperature
● 3 A Continuous Collector Current
● 5 A Peak Collector Current
● Customer-Specified Selections Available
BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
SEPTEMBER 1981 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
B
C
E
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BD241D
Collector-emitter voltage (R
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
= 0, RS = 0.1 Ω, VCC = 20 V.
V
BE(off)
= 100 Ω)
BE
= 0)
B
BD241E
BD241F
BD241D
BD241E
BD241F
V
V
CER
CEO
EBO
C
CM
B
tot
tot
stg
L
C
j
2
B(on)
MDTRACA
160
180
200
120
140
160
5 V
3 A
5 A
1 A
40 W
2 W
32 mJ
-65 to +150 °C
-65 to +150 °C
250 °C
= 0.4 A, RBE = 100 Ω,
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
SEPTEMBER 1981 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BD241D
BD241E
BD241F
BD241D
BD241E
BD241F
(see Notes 5 and 6)
V
(BR)CEO
I
CES
I
CEO
I
EBO
h
V
CE(sat)
V
h
|hfe|
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
BE
voltage
Small signal forward
fe
current transfer ratio
Small signal forward
current transfer ratio
= 30 mA
I
C
IB = 0
(see Note 5)
V
= 160 V
CE
= 180 V
V
CE
= 200 V
V
CE
= 90 V IB= 0 0.3 mA
V
CE
= 5 V IC= 0 1 mA
V
EB
VCE = 4 V
= 4 V
V
CE
= 750 mA IC= 3 A (see Notes 5 and 6) 2.5 V
I
B
= 4 V IC= 3 A (see Notes 5 and 6) 1.8 V
V
CE
= 10 V IC= 0.5 A f = 1 kHz 20
V
CE
= 10 V IC= 0.5 A f = 1 MHz 3
V
CE
V
BE
V
BE
V
BE
I
C
I
C
= 0
= 0
= 0
= 1 A
= 3 A
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
120
140
160
25
5
0.2
0.2
0.2
V
mA
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 3.125 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Turn-on time IC = 1 A
t
on
t
Turn-off time 1 µs
off
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
BE(off)
= -3.7 V
I
B(on)
= 20 Ω
R
L
= 0.1 A
†
I
= -0.1 A
B(off)
= 20 µs, dc ≤ 2%
t
p
MIN TYP MAX UNIT
0.3 µs
PRODUCT INFORMATION
2
Loading...