POSEICO AT706S08 Datasheet

Tj

From 75% VDRM up to 3100 A, gate 10V 5ohm

-30 /

standard specification

ANSALDO

Ansaldo Trasporti s.p.a.

Unita' Semiconduttori

PHASE CONTROL THYRISTOR AT706

Repetitive voltage up to 800 V
Mean on-state current 4305 A
Surge current 70 kA

FINAL SPECIFICATION

feb 97 - ISSUE : 02

Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -

Symbol Characteristic Conditions

[°C]

Value Unit

BLOCKING

V RRM Repetitive peak reverse voltage 125 800 V
V RSM Non-repetitive peak reverse voltage 125 900 V
V DRM Repetitive peak off-state voltage 125 800 V

I RRM Repetitive peak reverse current V=VRRM 125 200 mA
I DRM Repetitive peak off-state current V=VDRM 125 200 mA

CONDUCTING

I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 4305 A
I T (AV) Mean on-state current 180° sin, 50 Hz, Tc=85°C, double side cooled 3335 A

I TSM Surge on-state current sine wave, 10 ms 125 70 kA
I² t I² t without reverse voltage 24500 x1E3 A²s
V T On-state voltage On-state current = 10000 A 25 1.5 V
V T(TO) Threshold voltage 125 0.84 V

r T On-state slope resistance 125 0.060 mohm

SWITCHING

di/dt Critical rate of rise of on-state current, min.
dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 500 V/µs
td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=.5 µs 25 3 µs
tq Circuit commutated turn-off time, typical dV/dt = 20 V/µs linear up to 75% VDRM 160 µs
Q rr Reverse recovery charge di/dt=-20 A/µs, I= 2050 A 125 µC

I rr Peak reverse recovery current VR= 50 V A

I H Holding current, typical VD=5V, gate open circuit 25 300 mA

I L Latching current, typical VD=5V, tp=30µs 25 700 mA

125 320 A/µs

GATE

V GT Gate trigger voltage VD=5V 25 3.5 V

I GT Gate trigger current VD=5V 25 250 mA
V GD Non-trigger gate voltage, min. VD=VDRM 125 0.25 V
V FGM Peak gate voltage (forward) 30 V
I FGM Peak gate current 10 A
V RGM Peak gate voltage (reverse) 5 V
P GM Peak gate power dissipation Pulse width 100 µs 150 W
P G Average gate power dissipation 2 W

MOUNTING

R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 11 °C/kW
R th(c-h) Thermal impedance Case to heatsink, double side cooled 2 °C/kW

T j Operating junction temperature
F Mounting force 40.0 / 50.0 kN

Mass 1700 g

ORDERING INFORMATION : AT706 S 08

VDRM&VRRM/100

125 °C

AT706 PHASE CONTROL THYRISTOR

ANSALDO

FINAL SPECIFICATION feb 97 - ISSUE : 02

DISSIPATION CHARACTERISTICS

SQUARE WAVE

Th [°C]

130
120
110
100

90

30°

80

60°

70
60

90°

120°

180°

DC

50

PF(AV) [W]

7000

6000

5000

4000

3000

2000

1000

0 1000 2000 3000 4000 5000 6000

IF(AV) [A]

DC

180°

120°

90°

60°

30°

0

0 1000 2000 3000 4000 5000 6000

IF(AV) [A]