POSEICO ARF695S60 Datasheet

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POSEICO SPA

OSEICO

OSEICO SPA

Ower SEmiconductors Italian COrpo ration

Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. [phone] - Fax [phone]
Sales Office:
Tel. [phone] - Fax [phone]

FAST RECOVERY DIODE ARF695

FOR IGBT,IEGT,GCT APPLICATIONS

SNUBBERLESS OPERATION

LOW LOSSES SOFT RECOVERY

Repetitive voltage up to 6000 V

Mean forward current 880 A

Surge current 18 kA

TARGET SPECIFICATION

mar 03 - ISSUE : 2

Symbol Characteristic Conditions

Tj

[°C]

Value Unit

BLOCKING

V RRM Repetitive peak reverse voltage 125 6000 V

RSM Non-repetitive peak reverse voltage 125 6100 V

V

I

RRM Repetitive peak reverse current V=VRRM 125 mA

DC LINK Permanent DC voltage 125 3200 V

V

CONDUCTING

I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 880 A

F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 920 A

I

FSM Surge forward current Sine wave, 10 ms 125 18 kA

I

I² t I² t

reapplied reverse voltage up to 50% VRSM

1620 x1E3 A²s

FM Forward voltage Forward current = 1570 A 25 5.2 V

V

F(TO) Threshold voltage 125 2.10 V

V

F Forward slope resistance 125 1.55 mohm

r

SWITCHING

Q rr Reverse recovery charge I F = 1000 A di/dt= 250 A/µs 125 µC

I rr Peak reverse recovery current

t rr Reverse recovery time I F = 1000 A µs

Q rr Reverse recovery charge

I rr Peak reverse recovery current

s Softness (s-factor), min

OFF Turn off energy dissipation J

E

FR Peak forward recovery di/dt= 500 A/µs 125 V

V

VR = 100 V

di/dt= 500 A/µs

VR = V

125 A

3000 µC

125 1200 A

MOUNTING

R th(j-h) Thermal impedance Junction to heatsink, double side cooled 14 °C/kW

th(c-h) Thermal impedance Case to heatsink, double side cooled 3 °C/kW

R

j Operating junction temperature -30 / 125 °C

T

F Mounting force 46.0 / 54.0 kN

Mass 1150 g

ORDERING INFORMATION : ARF695 S 60

standard specification

VRRM/100

ARF695 FAST RECOVERY DIODE

A

P

P

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TARGET SPECIFICATION mar 03 - ISSUE : 2

OSEICO

OSEICO SPA

Ower SEmicondu ctors Italian COrporati on

FORWARD CHARACTERISTIC

Tj = 125 °C

5000

4500

4000

3500

3000

2500

2000

Forward Current [A]

1500

1000

500

0

0.7 1.7 2.7 3.7 4.7

Forward Voltage [V]

SURGE CHARACTERISTIC

Tj = 125 °C

20

18

16

14

12

10

ITSM [kA]

8

6

4

2

0

1 10 100

n° cycles

TRANSIENT THERMAL IMPEDANCE

DOUBLE SIDE COOLED

16.0

14.0

12.0

10.0

8.0

6.0

Zth j-h [°C/kW]

4.0

2.0

0.0

0.001 0.01 0.1 1 10 100

t[s]

Distributed by

ll the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change any
data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.