POSEICO SPA
OSEICO
OSEICO SPA
Ower SEmiconductors Italian COrpo ration
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510
FAST RECOVERY DIODE ARF694
FOR IGBT,IEGT,GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
Repetitive voltage up to 6000 V
Mean forward current 645 A
Surge current 10 kA
TARGET SPECIFICATION
mar 03 - ISSUE : 2
Symbol Characteristic Conditions
Tj
[°C]
Value Unit
BLOCKING
V RRM Repetitive peak reverse voltage 120 6000 V
RSM Non-repetitive peak reverse voltage 120 6100 V
V
I
RRM Repetitive peak reverse current V=VRRM 120 mA
DC LINK Permanent DC voltage 120 3200 V
V
CONDUCTING
I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 645 A
F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 675 A
I
FSM Surge forward current Sine wave, 10 ms 120 10 kA
I
I² t I² t
reapplied reverse voltage up to 50% VRSM
500 x1E3 A²s
FM Forward voltage Forward current = 1570 A 25 4.8 V
V
F(TO) Threshold voltage 120 2.10 V
V
F Forward slope resistance 120 1.80 mohm
r
SWITCHING
Q rr Reverse recovery charge I F = 1000 A di/dt= 250 A/µs 120 µC
I rr Peak reverse recovery current
t rr Reverse recovery time I F = 1000 A µs
Q rr Reverse recovery charge
I rr Peak reverse recovery current
s Softness (s-factor), min
OFF Turn off energy dissipation J
E
FR Peak forward recovery di/dt= 500 A/µs 125 V
V
VR = 100 V
di/dt= 500 A/µs
VR = V
120 A
2000 µC
120 1150 A
MOUNTING
R th(j-h) Thermal impedance Junction to heatsink, double side cooled 21 °C/kW
th(c-h) Thermal impedance Case to heatsink, double side cooled 3 °C/kW
R
j Operating junction temperature -30 / 120 °C
T
F Mounting force 22.0 / 24.5 kN
Mass 520 g
ORDERING INFORMATION : ARF694 S 60
standard specification
VRRM/100
ARF694 FAST RECOVERY DIODE
TARGET SPECIFICATION mar 03 - ISSUE : 2
OSEICO
OSEICO SPA
Ower SEmicondu ctors Italian COrporati on
FORWARD CHARACTERISTIC
Tj = 120 °C
2500
2000
1500
1000
Forward Current [A]
500
0
0123456
Forward Voltage [V]
SURGE CHARACTERISTIC
Tj = 120 °C
12
10
8
6
ITSM [kA]
4
2
0
1 10 100
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
25.0
20.0
15.0
10.0
Zth j-h [°C/kW]
5.0
0.0
0.001 0.01 0.1 1 10 100
t[s]
Distributed by
ll the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change any
data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.