POSEICO ARF670S45 Datasheet
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POSEICO SPA
OSEICO
OSEICO SPA
Ower SEmiconductors Italian COrpo ration
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510
FAST RECOVERY DIODE ARF670
FOR IGBT,IEGT,GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
Repetitive voltage up to 4500 V
Mean forward current 1315 A
Surge current 15 kA
TARGET SPECIFICATION
dic 02 - ISSUE : 01
Symbol Characteristic Conditions
Tj
[°C]
Value Unit
BLOCKING
V RRM Repetitive peak reverse voltage 140 4500 V
RSM Non-repetitive peak reverse voltage 140 4600 V
V
RRM Repetitive peak reverse current V=VRRM 140 150 mA
I
DC LINK Permanent DC voltage 140 2500 V
V
CONDUCTING
I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 1315 A
F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 1370 A
I
FSM Surge forward current Sine wave, 10 ms 140 15 kA
I
I² t I² t
reapplied reverse voltage up to 50% VRSM
1125 x1E3 A²s
FM Forward voltage Forward current = 1570 A 25 2.70 V
V
F(TO) Threshold voltage 140 1.50 V
V
F Forward slope resistance 140 0.60 mohm
r
SWITCHING
Q rr Reverse recovery charge I F = 1000 A di/dt= 250 A/µs 140 1500 µC
I rr Peak reverse recovery current
Q rr Reverse recovery charge I F = 1000 A di/dt= 500 A/µs 2050 µC
I rr Peak reverse recovery current
V pk Peak reverse recovery voltage
s Softness (s-factor), min 0.5
OFF Turn off energy dissipation 0.8 J
E
FR Peak forward recovery voltage di/dt= 500 A/µs 25 35 V
V
VR = 100 V
VR = 350 V ±10%
L= 1 µH ±10%
650 A
140 1050 A
1400 V
MOUNTING
R th(j-h) Thermal impedance Junction to heatsink, double side cooled 18 °C/kW
th(c-h) Thermal impedance Case to heatsink, double side cooled 6 °C/kW
R
j Operating junction temperature -40 / 140 °C
T
F Mounting force 22.0 / 24.5 kN
Mass 300 g
ORDERING INFORMATION : ARF670 S 45
standard specification
VRRM/100
ARF670 FAST RECOVERY DIODE
A
P
P
P
TARGET SPECIFICATION dic 02 - ISSUE : 01
OSEICO
OSEICO SPA
Ower SEmicondu ctors Italian COrporati on
FORWARD CHARACTERISTIC
Tj = 140 °C
5000
4500
4000
3500
3000
2500
2000
Forward Current [A]
1500
1000
500
0
0.7 1.7 2.7 3.7 4.7
Forward Voltage [V]
SURGE CHARACTERISTIC
Tj = 140 °C
16
14
12
10
8
ITSM [kA]
6
4
2
0
1 10 100
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
20
18
16
14
12
10
8
Zth j-h [°C/kW]
6
4
2
0
0.01 0.1 1 10
t[s]
Distributed by
ll the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change any
data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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