POSEICO ARF526S16 Datasheet

Tj

Forward current =

ANSALDO

Ansaldo Trasporti s.p.a.

Unita' Semiconduttori

FAST RECOVERY DIODE ARF526

Repetitive voltage up to 1600 V
Mean forward current 1345 A
Surge current 20 kA

TARGET SPECIFICATION

feb 97 - ISSUE : 02

Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -

Symbol Characteristic Conditions

[°C]

Value Unit

BLOCKING

V RRM Repetitive peak reverse voltage 125 1600 V
V RSM Non-repetitive peak reverse voltage 125 1700 V

I RRM Repetitive peak reverse current V=VRRM 125 50 mA

CONDUCTING

I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 1345 A

I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 1350 A

I FSM Surge forward current Sine wave, 10 ms 125 20 kA
I² t I² t
V FM Forward voltage
V F(TO) Threshold voltage 125 1.00 V

r F Forward slope resistance 125 0.300 mohm

reapplied reverse voltage up to 50% VRSM

2000 x1E3 A²s

2000 A 125 1.6 V

SWITCHING

t rr Reverse recovery time I F = 1000 A 3.5 µs

Q rr Reverse recovery charge

I rr Peak reverse recovery current
s Softness (s-factor), min 0.5

V FR Peak forward recovery di/dt= 100 A/µs 125 15 V

di/dt= 100 A/µs

VR = 50 V

125 250 µC

145 A

MOUNTING

R th(j-h) Thermal impedance Junction to heatsink, double side cooled 26 °C/kW

T j Operating junction temperature -30 / 125 °C

F Mounting force 18.0 / 20.0 kN

Mass 500 g

ORDERING INFORMATION : ARF526 S 16

standard specification

VRRM/100

ARF526 FAST RECOVERY DIODE

Power Dissipation [W]

ANSALDO

Power Dissipation [W]

TARGET SPECIFICATION feb 97 - ISSUE : 02

DISSIPATION CHARACTERISTICS

3000

2500

2000

SQUARE WAVE

DC

DC

180°

120°

90°

1500

30°

60°

1000

500

0

0 200 400 600 800 1000 1200 1400 1600 1800

Mean Forward Current [A]

SINE WAVE

3000

2500

120°

DC

180°

2000

90°

1500

30°

60°

1000

500

0

0 500 1000 1500 2000

Mean Forward Current [A]