POLYFET RF DEVICES F1240 Datasheet
40
General Description
η
V, Vgs = 0V,
V, Vgs = 0V,
V, Vgs = 0V,
F1240
polyfet rf devices
8/1/97
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOSTRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
40Watts Single Ended
Laser Driver and others.
"Polyfet" process features
TM
Package Style AT
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
t
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
performance
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation Resistance Temperature Voltage Voltage Voltage
120Watts 1.5
Junction to
Case Thermal
o
C/W
Maximum
Junction
o
C
200 -65 to 150
Storage
Temperature
o
C
DC Drain
Current
o
C
6 A
o
Drain to
Gate
Drain to
Source
VV50 50
Gate to
Source
30V
RF CHARACTERISTICS ( WATTS OUTPUT )
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Gps
Common Source Power Gain
10
dB
Idq =
1.2
A,
12.5Vds = V,
F = 175MHz
VSWR
Drain Efficiency
Load Mismatch Tolerance
60
20:1
%
Relative
Idq =
Idq =
1.2
1.2
A,
A,
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
40
2.4
0.35
22.5
120
18
90
V
3
1
71
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
0.15Ids = A,
12.5Vds = V, Vgs = 0V
Vds = 0 V, Vgs = 30V
0.3Ids = A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 24
Vgs = 20V, Vds = 10V
12.5Vds =
12.5Vds =
12.5Vds =
POLYFET RF DEVICES
12.5Vds = V,
12.5Vds = V,
Vgs = 0V
F = 175MHz
F = 175MHz
A
REVISION
F = 1 MHz
F = 1 MHz
F = 1 MHz
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1240 POUT VS PIN F=175 MHZ; IDQ=1.2A;
F1240
8/1/97
POUT VS PIN GRAPH
VDS=12.5V
45
40
35
30
25
20
15
10
0 1 2 3 4 5 6
Efficiency = 65%
PIN IN WATTS
POUT GAIN
IV CURVE ID AND GM VS VGS
F1C 3 DIE IV CURVE
25
20
15
23.00
21.00
19.00
17.00
15.00
13.00
11.00
9.00
CAPACITANCE VS VOLTAGE
F1C 3DIE CAPACITANCE
1000
100
Crss
10
0 5 10 15 20 25 30
F1C 3 DIE GM & ID vs VGS
100
10
Coss
VDS IN VOLTS
Ciss
Id
10
5
0
0 2 4 6 8 10 12 14 16 18 20
Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V
Vds in Volts
S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES
Gm
1
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
POLYFET RF DEVICES
REVISION
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