RF CHARACTERISTICS ( WATTS OUTPUT )
Silicon VDMOS and LDMOS
Cellular and Paging Amplifier Base
PATENTED GOLD METALIZED
HIGH EFFICIENCY, LINEAR,
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
Total
Device
Junction to
Case Thermal
Maximum
Junction
Storage
Temperature
DC Drain
Current
Drain to
Gate
Drain to
Source
Gate to
Source
Co200
-65to150
A
30V
V
V
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
VSWR
Common Source Power Gai
Drain Efficienc
Load Mismatch Toleranc
dB
%
Relative
20:1
Idq =
Idq =
Idq =
A,
A,
A,
Vds =
V,
Vds =
V,
Vds =
V,
MHz
MHz
MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
171
Mho
Ohm
AmppFV
V
pF
pFmAuA
Ids =
A,
Vgs = 0V
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
Ids =A,Vgs = Vds
Vds = 10V,
Vgs = 5V
Vgs = 20V,
Ids =16Vgs = 20V,
Vds = 10V
28.0
Vds =
V, Vgs = 0V,
F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V,
F = 1 MHz
Vds =
V, Vgs = 0V,
F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
SILICON GATE ENHANCEMENT MODE
RF POWER
HIGH GAIN, LOW NOISE
t
TMCoCo
C/W
o
F1174
polyfet rf devices
Dissipation
Resistance
Temperature
Voltage
Voltage
Voltage
1/12/98
VDMOS
TRANSISTOR
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
380 Watts 0.45
10
55
16
130Watts Gemini
Package StyleAR
70 70
1.6
1.6
1.6
28.0
28.0
28.0
F = 400
F = 400
F = 400
65
4
4
0.35
24
160
20
120
0.2
28.0
0.4
28.0
F1174 POUT VS PIN F=400
POUT VS PIN GRAPH
F1174
ID IN AMPS
Id in amps; Gm in mhos
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
1/12/98
MHZ; IDQ=1.6A; VDS=28.0V
180
160
140
120
100
80
60
40
20
0
0 5 10 15 20 25
Efficiency = 55%
PIN IN WATTS
POUT GAIN
12.50
12.00
11.50
11.00
10.50
10.00
9.50
9.00
8.50
8.00
F1J 4 DICE CAPACITANCE
1000
Ciss
100
10
1
0 5 10 15 20 25 30
Crss
VDS IN VOLTS
Coss
F1J 4 DICE IV
35
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
VDS IN VOLTS
F1J 4 DICE ID & GM Vs VG
100.00
10.00
gM
1.00
0.10
0 2 4 6 8 10 12 14 16 18
Vgs in Volts
Id
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