POLYFET RF DEVICES F1108 Datasheet
80
General Description
η
V, Vgs = 0V,
V, Vgs = 0V,
V, Vgs = 0V,
F1108
polyfet rf devices
8/1/97
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOSTRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
80Watts Gemini
Laser Driver and others.
"Polyfet" process features
TM
Package Style AK
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
t
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
performance
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation Resistance Temperature Voltage Voltage Voltage
170Watts 0.95
Junction to
Case Thermal
o
C/W
Maximum
Junction
o
C
200 -65 to 150
Storage
Temperature
o
C
DC Drain
Current
o
C
8 A
o
Drain to
Gate
Drain to
Source
VV70 70
Gate to
Source
30V
RF CHARACTERISTICS ( WATTS OUTPUT )
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Gps
Common Source Power Gain
11
dB
Idq =
0.8
A,
28.0Vds = V,
F = 400MHz
VSWR
Drain Efficiency
Load Mismatch Tolerance
55
20:1
%
Relative
Idq =
Idq =
0.8
0.8
A,
A,
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
0.7
12
80
10
60
V
2
1
71
2
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
0.1Ids = A,
28.0Vds = V, Vgs = 0V
Vds = 0 V, Vgs = 30V
0.2Ids = A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 8
Vgs = 20V, Vds = 10V
28.0Vds =
28.0Vds =
28.0Vds =
POLYFET RF DEVICES
28.0Vds = V,
28.0Vds = V,
Vgs = 0V
F = 400MHz
F = 400MHz
A
REVISION
F = 1 MHz
F = 1 MHz
F = 1 MHz
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
POUT IN WATTS
GAIN IN DB
F1108
Id in amps; Gm in mhos
8/1/97
POUT VS PIN GRAPH
F1108 POUT VS PIN F=400
MHZ; IDQ=0.8A; VDS=28.0V
90
80
70
60
50
40
30
20
10
0
0 1 2 3 4 5 6
Efficiency = 55%
PIN IN WATTS
POUT GAIN
IV CURVE ID AND GM VS VGS
F1J 2 DIE IV CURVE
18
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V
Vds in Volts
15.50
14.50
13.50
12.50
11.50
10.50
9.50
CAPACITANCE VS VOLTAGE
F1J 2 DICE CAPACITANCE
1000
Coss
100
Ciss
10
1
0 5 10 15 20 25 30
Crss
VDS IN VOLTS
F1J 2 DICE ID & GM Vs VG
100.00
Id
10.00
1.00
0.10
0 2 4 6 8 10 12 14 16 18
gM
Vgs in Volts
S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
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