POLYFET RF DEVICES F1001C Datasheet
20
General Description
η
Common Source Power Gain
Load Mismatch Tolerance
Drain Breakdown Voltage
Gate Leakage Current
Gate Bias for Drain Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
V, Vgs = 0V,
V, Vgs = 0V,
V, Vgs = 0V,
F1001C
polyfet rf devices
8/1/97
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOSTRANSISTOR
Cellular and Paging Amplifier
Base Stations, Broadcast FM/AM,
20Watts Single Ended
MRI, Laser Driver and others.
"Polyfet" process features
TM
Package Style AC
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
t
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
performance
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation Resistance Temperature Voltage Voltage Voltage
50Watts 3.13
Junction to
Case Thermal
o
C/W
Maximum
Junction
o
C
200 -65 to 150
Storage
Temperature
o
C
DC Drain
Current
o
C
2 A
o
Drain to
Gate
Drain to
Source
VV70 70
Gate to
Source
RF CHARACTERISTICS ( WATTS OUTPUT )
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Gps
16
dB
Idq =
0.2
A,
28.0Vds = V,
F = 175MHz
30V
VSWR
Drain Efficiency
60
20:1
%
Relative
Idq =
Idq =
0.2
0.2
A,
A,
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Zero Bias Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
65
1
1
71
0.8
1
5.5
33
4
20
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
POLYFET RF DEVICES
0.05Ids = A,
28.0Vds = V, Vgs = 0V
Vds = 0 V, Vgs = 30V
0.1Ids = A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 4
Vgs = 20V, Vds = 10V
28.0Vds =
28.0Vds =
28.0Vds =
REVISION
28.0Vds = V,
28.0Vds = V,
Vgs = 0V
A
F = 175MHz
F = 175MHz
F = 1 MHz
F = 1 MHz
F = 1 MHz
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
POUT IN WATTS
GAIN IN dB
F1001C
8/1/97
POUT VS PIN GRAPH
F1001C POUT vs PIN IDQ=0.1A; F=175 MHZ VDS=28V
35
30
25
20
15
10
5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Efficiency = 75%
PIN IN WATTS
POUT GAIN
IV CURVE ID AND GM VS VGS
F1B 1DIE IV CURVE
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V
Vds in Volts
CAPACITANCE VS VOLTAGE
F1B 1 DIE Capacitance vs Vds
20
19
18
17
16
15
14
13
12
11
10
100
Coss
10
Crss
1
0 5 10 15 20 25 30
10
1
0.1
0.01
0 2 4 6 8 10 12 14
Ciss
VDS IN VOLTS
F1B 1 DIE GM & ID vs VG
Id
Gm
Vgs in Volts
S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
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