Polyfet RF LY402 Technical data

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polyfet rf devices

General Description

Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.

"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.

Dissipation

440

TM

t

ABSOLUTE MAXIMUM RATINGS ( T =

Total

Device

Watts V

Junction to

Case Thermal

Resistance

o

0.38 C/W

Maximum

Temperature

Junction

o

200

SILICON GATE ENHANCEMENT MODE

RF POWER TRANSISTORLDMOS

220.0

Watts

Push - Pull

Package Style

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

o

25 C )

Storage

Temperature

-65 C to 150 C C A V

DC Drain

Current

oo

13.5

Drain to

Gate

Voltage

70 V

Drain to

Source

Voltage

70

LY402

AY

Gate to

Source

Voltage

20

Gps

η

Bvdss

Idss
Igss

Vgs

Idsat
Ciss
Crss
Coss

RF CHARACTERISTICS (

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency

Load Mismatch ToleranceVSWR

13

60

220.0

WATTS OUTPUT )

dB

20:1 Relative

0.80

Idq = A, Vds = V, F =
Idq =

0.80

%

Idq = 0.80

A, Vds = V, F =

A, Vds = V, F =

28.0

28.0

28.0

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage

Zero Bias Drain Current

Gate Leakage Current
Gate Bias for Drain Current

Forward TransconductancegM Vds = 10V, Vgs = 5V

Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance

65

2.0

1

1 7

5.4

0.17

34.00

160.0

8.0

100.0

V
mA
uA

V

Mho

Ohm

Amp

pF
pF
pF

0.50Ids = mA, Vgs = 0V

Vds =

Vds = 0V Vgs = 30V

Vgs = 20V, Ids = Rdson Saturation Resistance

Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =

28.0

0.30

V, Vgs = 0V

A, Vgs = VdsIds =

16.00

Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0

MHz

500
500

MHz

500

MHz

A

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 01/17/2002

LY402

ID IN AMPS

POUT VS PIN GRAPH

LY402 Pin vs Pout F=500Mhz; Vds=28Vdc, Idq=.8A

260

240
220
200
180
160
140
120
100

80
60
40
20

0

0 2 4 6 8 10 12 14 16 18 20

Efficiency @190W = 60%

Pin in Watts

L4 2 DIE IV

35

30

25

20

15

10

5

0

0 2 4 6 8 10 12 14 16 18 20

vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v

VDS IN VOLTS

Pout

Gain

CAPACITANCE VS VOLTAGE

18

17

16

15

14

13

12

11

1000

100

10

1

0 5 10 15 20 25 30

L4 2DIE CAPACITANCE

Ciss

Coss

Crss

VDS IN VOLTS

ID & GM VS VGSIV CURVE

100

10

1

0.1
0 2 4 6 8 10 12 14

L4 2 DIE ID, GM vs VG

ID

Vgs in Volts

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

01/17/2002

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION