PMC Pm29F002 Technical data

PMC
FEATURES
ADVANCE INFORMATION
Pm29F002
2 Megabit (256K X 8) 5.0 Volt-only CMOS Flash Memory
Single Power Supply Operation
- 5.0 V ± 10% Read/Program/Erase
• High Performance Read
- 55/70/90 ns access time
• Cost Effective Block Architecture
- One 16 Kbytes top or bottom Boot Block with software lockout
- Two 8 Kbytes Parameter Blocks
- One 96 Kbytes Main Block
- One 128 Kbytes Main Block
• Automatic Erase and Program
- Typical 15 µs/byte programming
- Typical 40 ms block or chip erase
• Hardware Data Protection
• Data# Polling and Toggle Bit Features
• Low Power Consumption
- Typical 10 mA active read current
- Typical 40 mA program/erase current
- Typical <0.1
• High Product Endurance
- Guarantee 10,000 program/erase cycles
- Typical 50,000 program/erase cycles
- Minimum 10 years data retention
• Industrial Standard Pin-out and Packaging
- 32-pin Plastic DIP
- 32-pin PLCC
• Manufactured on 0.30 µm process
- Fully compatible with previous 0.35 µm version
µ
A CMOS standby current
GENERAL DESCRIPTION
The Pm29F002 is a 2 Megabit, 5.0 Volt-only Flash Memory organized as 262,144 bytes of 8 bits each. This device is designed to use a 5.0 Volt power supply to perform in-system programming, 12.0 Volt V supply for program and erase operation is not required. The device can be programmed in standard EPROM programmers as well.
The 2 Megabit memory array is divided into five blocks of one 16 Kbytes, two 8 Kbytes, one 96 Kbytes, and one 128 Kbytes for BIOS and parameters storage. The five blocks allow users to flexibly make chip erase or block erase operation flexible. The block erase feature allows a particular block to be erased and reprogrammed without affecting the data in other blocks. After the device performed chip erase or block erase operation, it can be reprogrammed on a byte-by-byte basis.
The device has a standard microprocessor interface as well as JEDEC single-power-supply Flash compatible pin-out and command set. The program operation of Pm29F002 is executed by issuing the program command code into command register. The internal control logic automatically handles the programming voltage ramp-up and timing. The erase operation of Pm29F002 is executed by issuing the chip erase or block erase command code into command register. The internal control logic automatically handles the erase voltage ramp-up and timing. The preprogramming on the array which has not been programmed is not required before the erase operation. The device also features Data# Polling and Toggle Bit function, the end of program or erase operation can be detected by Data# Polling of I/O7 or Toggle Bit of I/O6.
The device has an optional 16 Kbytes top or bottom boot block with a software lockout feature for data security. The boot block can be used to store user secure code. When the lockout feature is enabled, the boot block is permanently protected from being reprogrammed.
The Pm29F002 is manufactured on PMC’s 0.30 µm advanced nonvolatile technology, P-FLASH™. The device is packaged in a 32-pin DIP and PLCC with access time of 55, 70 and 90 ns.
power
PP
Programmable Microelectronics Corp. Issue Date: March, 2001 Rev:1.0
1
PMC
CONNECTION DIAGRAMS
NC
A16 A15 A12
A7 A6
A5 A4 A3
A2 A1
A0 I/O0 I/O1
I/O2
GND
1 2 3 4 5
6 7
8 9
10 11
12 13 14 15
16
32 31 30 29 28 27 26 25 24 23 22 21 20
19 18
17
CC
V
WE# A17 A14 A13
A8 A9 A11 OE# A10 CE# I/O7 I/O6 I/O5 I/O4 I/O3
A7 A6
A5 A4
A3 A2 A1
A0
I/O0
5 6
7 8
9 10
11 12
13
14
A12
15
A15
Pm29F002
CC
A16
V
WE#
20
A17
29 28
27 26 25 24 23 22 21
A14 A13
A8 A9 A11
OE# A10
CE# I/O7
NC
1234323130
18
1716
19
LOGIC SYMBOL
18
A0-A17
CE# OE# WE#
32-Pin PDIP
I/O0-I/O7
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
32-Pin PLCC
8
Programmable Microelectronics Corp.
Issue Date: March, 2001 Rev: 1.0
2
PMC
PRODUCT ORDERING INFORMATION
Pm29F002 T -55 P C
Pm29F002
Temperature Range
C = Commercial (0°C to +70°C)
Package Type
P = 32-pin Plastic DIP (32P) J = 32-pin Plastic J-Leaded Chip Carrier (32J)
Speed Option Boot Block Location
T = Top Boot Block B = Bottom Boot Block
PMC Device Number
t
rebmuNtraP
CJ55-T200F92mP
CP55-T200F92mP CJ55-B200F92mP
CP55-B200F92mP
CJ07-T200F92mP
CP07-T200F92mP CJ07-B200F92mP
CP07-B200F92mP
CJ09-T200F92mP
CP09-T200F92mP CJ09-B200F92mP
CP09-B200F92mP
CCA
)sn(
55
07
09
tooB
noitacoL
poT
mottoB
poT
mottoB
poT
mottoB
egakcaP
J23
P23
J23
P23
J23
P23
J23
P23
J23
P23
J23
P23
erutarepmeT
egnaR
laicremmoC
)C°07+otC°0(
laicremmoC
)C°07+otC°0(
laicremmoC
)C°07+otC°0(
Note: Valid combination list for the Pm29F002. Please consult the local PMC sales office, sales representa­tives or distributors to confirm the availability of specific valid combination and delivery schedule.
Programmable Microelectronics Corp.
Issue Date: March, 2001 Rev: 1.0
3
PMC
PIN DESCRIPTIONS
LOBMYSEPYTNOITPIRCSED
Pm29F002
71A-0ATUPNI
#ECTUPNI
#EWTUPNI
#EOTUPNI
7O/I-0O/I
V
CC
DNGdnuorG
.retsigerdnammocdnasesserddayromemroF:stupnIsserddA
.elcycetirwagniruddehctalyllanretnierasesserddA
seirtiucriclanretnis'ecivedehtsetavitcawol#EC:elbanEpihC
dnaecivedehtstcelesedhgih#EC.noitarepoecivedrof
.noitpmusnocrewopehtecuderotedomybdnatsotnisehctiws
.elbatscitsiretcarahcCDotreferesaelP
si#EW.noitarepoetirwrofecivedehtetavitcA:elbanEetirW
.wolevitca
daeragnirudsreffubatads'ecivedehtlortnoC:elbanEtuptuO
.wolevitcasi#EO.elcyc
,noitarepomargorpgnirudatadyarrastupnI:stuptuO/stupnIataD
gniruddehctalyllanretnisiataD.evitcaera#EWdna#ECnehw
/TUPNI
TUPTUO
.delbasiderastuptuo
ylppuSrewoPeciveD
,evitcaera#EOdna#ECnehW.selcycmargorpdnaetirweht
.edocecivedroedocrerutcafunam,atadyarrasdnestuptuoeht
ehtrodetcelesedsipihcehtnehwetats-irtottaolfsnipatadehT
CNnoitcennoCoN
Programmable Microelectronics Corp.
Issue Date: March, 2001 Rev: 1.0
4
PMC
BLOCK DIAGRAM
Pm29F002
ERASE/PROGRAM
VOLTAGE
GENERATOR
HIGH VOLTAGE
SWITCH
WE#
CE# OE#
COMMAND REGISTER
A0-A17
LATCH
ADDRESS
DEVICE OPERATION
READ OPERATION
The access of Pm29F002 is similar as that of EPROM. To obtain data at the outputs, three control functions must be satisfied:
CE# is the chip enable and should be pulled low
( VIL ).
OE# is the output enable and should be pulled
low ( VIL).
WE# is the write enable and should remains high
( V
).
IH
BOOT BLOCK LOCKOUT
The device has a software lockout feature to pre­vent the data in the boot block from being erased or reprogrammed. The boot block can be located at the top or bottom of the address location. The block size is 16 Kbytes. Once the lockout feature is enable, the boot block can not be erased or reprogrammed. Data in the main memory block can still be updated through the regular programming method. The boot block lockout feature can be turned on by issuing a six-bus-cycle com­mand sequence. Please refer to Table 4 and Chart 4.
I/O0-I/O7
I/O BUFFERS
CE,OE LOGIC
Y-DECODER
X-DECODER
BOOT BLOCK LOCKOUT DETECTION
The state of the Boot Block lockout can be de­tected by software product identification entry. After entry, selects Boot Block address with A0 = “0” and A1 = “1” and then read I/O0. A data of “0” means the lock­out feature is disabled and the Boot Block can be erased or programmed. A data of “1” means the lockout fea­ture is enabled and the Boot Block is protected. Prod­uct identification exit must be executed before the de­vice returns to read mode.
PRODUCT IDENTIFICATION
The product identification mode can be used to identify the device and the manufacturer by hardware or soft­ware operation. The hardware operation mode is acti­vated by applying a 12.0 Volt on A9 pin, typically used by an external programmer to select the right program­ming algorithm for the device. For detail, please see Bus Operation Modes in Table 3. The software opera­tion mode is activated by three-bus-cycle command. Please see Software Command Definition in Table 4.
DATA
LATCH
Y-GATING
MEMORY
SENSE
AMP
ARRAY
Programmable Microelectronics Corp.
Issue Date: March, 2001 Rev: 1.0
5
PMC
DEVICE OPERATION (CONTINUED)
Pm29F002
BYTE PROGRAMMING
The programming is a four-bus-cycle operation and the data is programmed into the device (to a logical 0) on a byte-by-byte basis. Please see Software Com­mand Definition in Table 4. A program operation is ac­tivated by writing the three-byte command sequence followed by one byte of data into the device. The ad­dress are latched on the falling edge of WE# or CE# whichever occurs later, and the data is latched on the rising edge of WE# or CE#, whichever occurs first. The internal control logic automatically handles the internal programming voltages and timing.
A data “0” can not be programmed back to a “1”. Only erase operation can convert “0”s to “1”s. The Data# Polling of I/O7 or Toggle Bit of I/O6 can be used to de­tect when the programming operation is completed.
CHIP ERASE
The entire memory array can be erased through a chip erase operation. Pre-programs the device is not required prior to chip erase operation. Chip erase starts after a six-bus-cycle chip erase command sequence. All commands will be ignored once the chip erase operation has started. The device will return back to read mode after the completion of chip erase. When the boot block lockout feature is enabled, the boot block will not be erased during a chip erase operation. Only the parameter blocks and the main blocks will be erased.
BLOCK ERASE
The memory array is organized into five blocks: one 16 Kbytes boot block, two 8 Kbytes parameter blocks, one 96 Kbytes and one 128 Kbytes main blocks. A block erase operation allows to erase any individual block. Pre-programs the block is not required prior to block erase operation. If the boot block lockout feature is enable, the block erase command attempts to erase the boot block will be ignored. The block erase com­mand is similar to chip erase command except for the last bus cycle command where the block addresses are used to select the block for erasure and the input data to the I/Os is 30h. Each block erase operation erases one block. Block erase and chip erase are both internally controlled and timed.
I/O7 DATA# POLLING
The Pm29F002 provides Data# Polling feature to indicate the process or the completion of a program or erase cycle. During a program cycle, an attempt to read the device will result in the complement of the last loaded data on I/O7. Once the program cycle is completed, the true data of the last loaded data is valid on all out­puts. During a block or chip erase operation, an attempt to read the device will result a “0” on I/O7. After the erase cycle is completed, an attempt to read the device will result a “1” on I/O7.
I/O6 TOGGLE BIT
The Pm29F002 also provides Toggle Bit feature as a method to detect the process or the end of a pro­gram or erase cycle. During a program or erase opera­tion, an attempt to read data from the device will result in I/O6 toggling between “1” and “0”. When the program or erase operation is complete, I/O6 will stop toggling and valid data will be read. Toggle bit may be accessed at any time during a program or erase cycle.
HARDWARE DATA PROTECTION
Hardware data protection protects the device from unintentional erase or program operation. It is performed in the following ways: (a) VCC sense: if VCC is below 3.8 V (typical), the program function is inhibited. (b) Write inhibit: holding any of the signal OE# low, CE# high or WE# high inhibits a write cycle. (c) Noise filter: pulses of less than 20 ns (typical) on the WE# or CE# inputs will not initiate a write cycle.
Programmable Microelectronics Corp.
Issue Date: March, 2001 Rev: 1.0
6
PMC
MEMORY BLOCKS AND ADDRESSES
Table 1. Top Boot Block Address Table (Pm29F002T)
kcolBeziSkcolBegnaRsserddA
2kcolBniaMsetybK821hFFFF1-h00000
1kcolBniaMsetybK69hFFF73-h00002
2kcolBretemaraPsetybK8hFFF93-h00083
1kcolBretemaraPsetybK8hFFFB3-h000A3
kcolBtooBsetybK61hFFFF3-h000C3
Table 2. Bottom Boot Block Address Table ( Pm29F002B)
kcolBeziSkcolBegnaRsserddA
Pm29F002
kcolBtooBsetybK61hFFF30-h00000
1kcolBretemaraPsetybK8hFFF50-h00040
2kcolBretemaraPsetybK8hFFF70-h00060
1kcolBniaMsetybK69hFFFF1-h00080
2kcolBniaMsetybK821hFFFF3-h00002
OPERATING MODES
Table 3. Bus Operation Modes
edoM#EC#EO#EWSSERDDAO/I
daeRV etirWV
ybdnatSV
LI
LI
HI
elbasiDtuptuOXV
noitacifitnedItcudorP
erawdraH
V
LI
Notes:
1. X can be VIL, VIH or addresses.
2. VH = 12.0 V ± 0.5 V.
Programmable Microelectronics Corp.
V
LI
V
HI
XX X ZhgiH
HI
V
LI
V
HI
V
LI
)1(
X
XD
XX ZhgiH
=71A-2AV=9A,X
V=1A
V
HI
LI
V=1A
LI
V=0A,
LI
V=0A,
HI
)2(
,
H
)2(
V=9A,X=71A-2A
,
H
3. Manufacturer Code: 9Dh;
Device Code: 1Dh (top boot), 2Dh (bottom boot)
Issue Date: March, 2001 Rev: 1.0
7
D
TUO
NI
)3(
edoCrerutcafunaM
)3(
edoCeciveD
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