Philips (Now NXP) PBSS4140V Schematic [ru]
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D744
PBSS4140V
40 V low V
Product specification
Supersedes data of 2001 Nov 05
CEsat
NPN transistor
2002 Jun 20
Philips Semiconductors Product specification
40 V low V
CEsat
NPN transistor
FEATURES
• 300 mW total power dissipation
• Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin
package
• Improved thermal behaviour due to flat leads
• Excellent coplanarity due to straight leads
• Low collector-emitter saturation voltage
• High current capabilities
• Reduced required PCB area.
APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
PBSS4140V
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CRP
R
CEsat
PINNING
PIN DESCRIPTION
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
collector-emitter voltage 40 V
collector current (DC) 1 A
peak collector current 2 A
equivalent on-resistance <190 mΩ
DESCRIPTION
NPN low V
transistor with high current capability in a
CEsat
SOT666 plastic package.PNPcomplement: PBSS5140V.
MARKING
TYPE NUMBER MARKING CODE
PBSS4140V 22
handbook, halfpage
Top view
5
46
123
MAM444
1, 2, 5, 6
3
Fig.1 Simplified outline (SOT666) and symbol.
4
2002 Jun 20 2
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4140V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
CRP
I
B
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 3A
repetitive peak collector current note 1 − 2A
base current (DC) − 300 mA
peak base current − 1A
total power dissipation T
≤ 25 °C; note 2 − 300 mW
amb
T
≤ 25 °C; note 3 − 500 mW
amb
T
≤ 25 °C; notes 1 and 2 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Operated under pulsed conditions: t
≤ 30 ms; δ≤0.2.
p
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 410 K/W
note 2 215 K/W
notes 1 and 3 110 K/W
Notes
1. Device mounted on a printed circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
3. Operated under pulsed conditions: tp≤ 30 ms; δ≤0.2.
Soldering
The only recommended soldering method is reflow soldering.
.
2002 Jun 20 3
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4140V
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
f
T
collector-base cut-off current VCB=40V; IE=0 −−100 nA
V
=40V; IE= 0; T
CB
= 150 °C −−50 µA
amb
collector-emitter cut-off current VCE=30V; IB=0 −−100 nA
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−
=5V; IC= 500 mA 300 − 900
V
CE
V
=5V; IC=1A 200 −−
CE
V
=5V; IC= 2 A; note 1 75 −−
CE
collector-emitter saturation voltage IC= 100 mA; IB=1mA − 50 80 mV
I
= 500 mA; IB=50mA − 70 110 mV
C
I
= 1 A; IB= 100 mA; note 1 − 150 190 mV
C
= 2 A; IB= 200 mA; note 1 − 320 440 mV
I
C
equivalent on-resistance IC= 1 A; IB= 100 mA; note 1 − 150 <190 mΩ
base-emitter saturation voltage IC= 1 A; IB= 100 mA −−1.2 V
base-emitter turn-on voltage VCE=5V; IC=1A −−1.1 V
transition frequency IC= 50 mA; VCE=10V;
150 −−MHz
f = 100 MHz
C
c
collector capacitance VCB=10V; IE=Ie= 0; f = 1 MHz −−10 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2002 Jun 20 4
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