Philips (Now NXP) BSS87 Schematic [ru]
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BSS87
N-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of 1997 June 23
2001 May 18
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor
FEATURES
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown
• Low R
APPLICATIONS
• Line current interruptor in telephone sets
• Applications in relay, high-speed and line transformer
drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
DSon
.
PINNING - SOT89
PIN DESCRIPTION
1 source
2 drain
3 gate
handbook, halfpage
g
123
Bottom view
MAM355
Fig.1 Simplified outline (SOT89) and symbol.
BSS87
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
V
GSO
I
D
P
tot
R
DSon
y
forward transfer admittance ID= 400 mA; VDS= 25 V 140 750 − mS
fs
drain-source voltage (DC) −−200 V
gate-source voltage (DC) open drain −−±20 V
drain current (DC) −−400 mA
total power dissipation T
≤ 25 °C −−1W
amb
drain-source on-state resistance ID= 400 mA; VGS=10V − 1.6 3 Ω
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage (DC) − 200 V
gate-source voltage (DC) open drain −±20 V
drain current (DC) − 400 mA
peak drain current − 1.6 A
total power dissipation T
≤ 25 °C; note 1 − 1W
amb
storage temperature −55 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
10 × 10 mm
2001 May 18 2
Philips Semiconductors Product specification
N-channel enhancement mode
BSS87
vertical D-MOS transistor
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
10 × 10 mm
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GSth
R
DSon
Y
fs
C
iss
C
oss
C
rss
Switching times (see Figs 2 and 3)
t
on
t
off
thermal resistance from junction to ambient note 1 125 K/W
drain-source breakdown voltage ID= 250 µA; VGS= 0 200 −−V
drain-source leakage current VDS=60V; VGS=0 −−200 nA
V
= 200 V; VGS=0 − 0.1 60 µA
DS
gate-source leakage current VGS= ±20 V; VDS=0 −−±100 nA
gate-source threshold voltage ID= 1 mA; VGS =V
DS
0.8 − 2.8 V
drain-source on-state resistance ID= 400 mA; VGS=10V − 1.6 3 Ω
transfer admittance ID= 400 mA; VDS= 25 V 140 750 − mS
input capacitance VDS=25V; VGS=0;
− 100 120 pF
f = 1 MHz
output capacitance VDS=25V; VGS=0;
− 20 30 pF
f = 1 MHz
reverse transfer capacitance VDS=25V; VGS=0;
− 10 15 pF
f = 1 MHz
turn-on time ID= 250 mA; VDD=50V;
− 610ns
VGS= 0 to 10 V
turn-off time ID= 250 mA; VDD=50V;
− 49 60 ns
VGS= 0 to 10 V
2001 May 18 3
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