Philips (Now NXP) BSR19, BSR19A Schematic [ru]
DISCRETE SEMICONDUCTORS
DATA SH EET
BSR19; BSR19A
NPN high voltage transistors
Product specification
Supersedes data of 2004 Jan 13
2004 Mar 15
Philips Semiconductors Product specification
NPN high voltage transistors BSR19; BSR19A
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 160 V).
APPLICATIONS
• General purpose switching and amplification
• Especially used for telephony applications.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complements: BSR20 and BSR20A.
MARKING
TYPE NUMBER MARKING CODE
(1)
BSR19 56* or U35
BSR19A 57* or U36
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
BSR19 − plastic surface mounted package; 3 leads SOT23
BSR19A − plastic surface mounted package; 3 leads SOT23
2004 Mar 15 2
Philips Semiconductors Product specification
NPN high voltage transistors BSR19; BSR19A
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
CBO
CEO
CM
tot
FE
T
collector-base voltage open emitter
BSR19 − 160 V
BSR19A − 180 V
collector-emitter voltage open base
BSR19 − 140 V
BSR19A − 160 V
peak collector current − 600 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
DC current gain IC= 10 mA; VCE=5V
BSR19 60 −
BSR19A 80 −
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 100 300 MHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSR19 − 160 V
BSR19A − 180 V
V
CEO
collector-emitter voltage open base
BSR19 − 140 V
BSR19A − 160 V
V
I
I
I
P
T
T
T
EBO
C
CM
B
tot
stg
j
amb
emitter-base voltage open collector − 6V
collector current (DC) − 300 mA
peak collector current − 600 mA
base current (DC) − 100 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Mar 15 3
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