Philips (Now NXP) BSN20 Schematic [ru]

1. Description

2. Features

BSN20

N-channel enhancement mode field-effect transistor

Rev. 03 — 26 June 2000 Product specification

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.

Product availability:

BSN20 in SOT23.

■ TrenchMOS™ technology

■ Very fast switching

■ Logic level compatible

■ Subminiature surface mount package.

3. Applications

■ Relay driver

c

c

■ High speed line driver

■ Logic level translator.

4. Pinning information

Table 1: Pinning - SOT23, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 source (s)
3 drain (d)

1. TrenchMOS is a trademark of Royal Philips Electronics.

3

03ab44

12

SOT23 N-channel MOSFET

d

g

03ab30

s

Philips Semiconductors

BSN20

N-channel enhancement mode field-effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I
P
T
R

DS

D

tot
j
DSon

drain-source voltage (DC) Tj=25to150°C − 50 V
drain current (DC) Tsp=25°C; VGS=10V − 173 mA
total power dissipation Tsp=25°C − 0.83 W
junction temperature − 150 °C
drain-source on-state resistance VGS= 10 V; ID= 100 mA 2.8 15 Ω

=5V; ID= 100 mA 3.8 20 Ω

V

GS

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) Tj=25to150°C − 50 V
drain-gate voltage (DC) Tj=25to150°C; RGS=20kΩ−50 V
gate-source voltage (DC) −±20 V
drain current (DC) Tsp=25°C; VGS=10V;

− 173 mA

Figure 2 and 3

T

= 100 °C; VGS=10V;Figure 2 − 110 mA

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs;

− 0.7 A

Figure 3

total power dissipation Tsp=25°C; Figure 1 − 0.83 W
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C

source (diode forward) current (DC) Tsp=25°C − 173 mA
peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs − 0.7 A

9397 750 07213

Product specification Rev. 03 — 26 June 2000 2 of 13

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

BSN20

N-channel enhancement mode field-effect transistor

120

P

100

der

(%)

80

60

40

20

0

0 25 50 75 100 125 150 175

P

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa17

Tsp (oC)

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

1

Tsp = 25oC

I

D

(A)

R

DSon

= VDS/ I

120

I

(%)

der

100

80

60

40

20

0

0 25 50 75 100 125 150 175

Tsp (oC)

03aa25

VGS≥ 5V

I

I

der

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03aa49

tp = 10 µs

D

100 µs

-1

10

t

P

t

p

-2

10

11010

p

δ

=

T

t

T

D.C.

1 ms

10 ms

100 ms

VDS (V)

2

Tsp=25°C; IDM is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 07213

© Philips Electronics N.V. 2000. All rights reserved.

Product specification Rev. 03 — 26 June 2000 3 of 13

Philips Semiconductors

BSN20

N-channel enhancement mode field-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-sp)

R

th(j-a)

thermal resistance from junction to solder
point

thermal resistance from junction to ambient mounted on a printed circuit board;

7.1 Transient thermal impedance

mounted on a metal clad substrate;

Figure 4

minimum footprint

150 K/W

350 K/W

03aa47

t

p

δ =

T

t

T

tp(s)

Z

th(j-sp)
(K/W)

3

10

δ

= 0.5

2

10

0.2

0.1

10

0.05

0.02

1

-5

10

single pulse

-4

10

-3

10

-2

10

P

t

p

-1

10

110

Mounted on a metal clad substrate.

Fig 4. Transient thermal impedance from junction to solder point as a function of

pulse duration.

9397 750 07213

© Philips Electronics N.V. 2000. All rights reserved.

Product specification Rev. 03 — 26 June 2000 4 of 13

Philips Semiconductors

BSN20

N-channel enhancement mode field-effect transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown
voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS;

drain-source leakage current VDS= 40 V; VGS=0V

gate-source leakage current VGS= ±20 V; VDS=0V − 10 100 nA
drain-source on-state

resistance

Dynamic characteristics

g

fs

C

iss

C

oss

C

rss

t

on

t

off

forward transconductance VDS= 10 V; ID= 100 mA;

input capacitance VGS=0V; VDS=10V;
output capacitance − 715pF
reverse transfer capacitance − 48pF
turn-on time VDD= 20 V; RD= 180 Ω;
turn-off time − 815ns

Source-drain diode

V

SD

source-drain (diode forward)
voltage

t

rr

Q

r

reverse recovery time IS= 180 mA;
recovered charge − 30 − nC

ID=10µA; VGS=0V

=25°C5075− V

T

j

= −55 °C46−−V

T

j

Figure 9

=25°C 0.4 1 − V

T

j

= 150 °C 0.3 −−V

T

j

= −55 °C −−3.5 V

T

j

=25°C − 0.01 1.0 µA

T

j

= 150 °C −−10 µA

T

j

VGS=10V; ID= 100 mA;

Figure 7 and 8

=25°C − 2.8 15 Ω

T

j

= 150 °C −−28 Ω

T

j

=5V; ID= 100 mA;

V

GS

Figure 7 and 8

=25°C − 3.8 20 Ω

T

j

40 170 − mS

Figure 11

− 17 25 pF

f = 1 MHz; Figure 12

− 1.7 8 ns

=10V; RG=50Ω;

V

GS

=50Ω

R

GS

IS= 180 mA; VGS=0V;

− 0.9 1.5 V

Figure 13

− 30 − ns

/dt = −100 A/µs;

dI

S

=0V; VDS=25V

V

GS

9397 750 07213

Product specification Rev. 03 — 26 June 2000 5 of 13

© Philips Electronics N.V. 2000. All rights reserved.