Philips (Now NXP) BSH111 Schematic [ru]

M3D088

1. Description

2. Features

BSH111

N-channel enhancement mode field-effect transistor

Rev. 02 — 26 April 2002 Product data

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.

Product availability:

BSH111 in SOT23.

■ TrenchMOS™ technology

■ Very fast switching

■ Low threshold voltage

■ Subminiature surface mount package.

3. Applications

■ Battery management

■ High speed switch

■ Logic level translator.

4. Pinning information

Table 1: Pinning - SOT23, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 source (s)
3 drain (d)

12

Top view

3

MSB003

SOT23

g

MBB076

d

s

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I

D

P
T
R

DS

tot
j
DSon

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 55 V
drain current (DC) Tsp=25°C; VGS= 4.5 V - 335 mA
total power dissipation Tsp=25°C - 0.83 W
junction temperature - 150 °C
drain-source on-state resistance VGS= 4.5 V; ID= 500 mA 2.3 4.0 Ω

= 2.5 V; ID= 75 mA 2.4 5.0 Ω

V

GS

= 1.8 V; ID= 75 mA 3.1 8.0 Ω

V

GS

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 55 V
drain-gate voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ -55V
gate-source voltage - ±10 V
drain current (DC) Tsp=25°C; VGS= 4.5 V;

- 335 mA

Figure 2 and 3

T

= 100 °C; VGS= 4.5 V; Figure 2 - 212 mA

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs;

- 1.3 A

Figure 3

total power dissipation Tsp=25°C; Figure 1 - 0.83 W
storage temperature −65 +150 °C
junction temperature −65 +150 °C

source (diode forward) current (DC) Tsp=25°C - 335 mA
peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs - 1.3 A

9397 750 09629

Product data Rev. 02 — 26 April 2002 2 of 13

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

03aa17

200

Tsp (°C)

P

P

der

(%)

der

120

80

40

0

0

P

tot

----------------------

P

tot 25 C°()

50 100 150

100%×=

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

10

150

T

03aa25

sp

200

(°C)

I

(%)

der

120

80

40

0

0

50 100

VGS≥ 4.5 V

I

I

der

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03aa71

I
(A)

D

1

-1

10

-2

10

1

Limit R

DSon

= VDS/ I

D

tp=10µs

100µs

1ms

DC

10

10 ms

100 ms

VDS (V)

Tsp=25°C; IDM is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

2

10

9397 750 09629

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Product data Rev. 02 — 26 April 2002 3 of 13

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

R

th(j-a)

thermal resistance from junction to
solder point

thermal resistance from junction to
ambient

7.1 Transient thermal impedance

mounted on metal clad
substrate; Figure 4

minimum footprint; mounted on
printed circuit board

- - 150 K/W

- 350 - K/W

3

10

Z

th(j-sp)
(K/W)

2

δ = 0.5

10

0.2

0.1

0.05

10

0.02

single pulse

1

-5

10

-4

10

-3

10

-2

10

-1

10

P

δ =

t

p

T

1

Mounted on metal clad substrate.

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

t

p

T

t

tp (s)

03aa69

10

9397 750 09629

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Product data Rev. 02 — 26 April 2002 4 of 13

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown
voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS;

drain-source leakage current VDS= 44 V; VGS=0V

gate-source leakage current VGS= ±8 V; VDS= 0 V - 10 100 nA
drain-source on-state

resistance

Dynamic characteristics

g

Q
Q
Q
C
C
C
t
t

fs

g(tot)
gs

gd
iss
oss
rss

on
off

forward transconductance VDS= 10 V; ID= 200 mA;

total gate charge ID= 0.5 A; VDS=44V;
gate-source charge - 0.05 - nC
gate-drain (Miller) charge - 0.5 - nC
input capacitance VGS=0V; VDS=10V;
output capacitance - 7 30 pF
reverse transfer capacitance - 4 10 pF
turn-on time VDD= 50 V; RD= 250 Ω;
turn-off time - 11 15 ns

ID=10µA; VGS=0V

=25°C5575-V

T

j

= −55 °C50--V

T

j

Figure 9

=25°C 0.4 1.0 1.3 V

T

j

= 150 °C 0.3 - - V

T

j

= −55 °C - - 2.5 V

T

j

=25°C - 0.01 1.0 µA

T

j

= 150 °C--10µA

T

j

VGS= 2.5 V; ID=75mA;

Figure 7 and 8

=25°C - 2.4 5 Ω

T

j

= 150 °C - - 7.4 Ω

T

j

= 4.5 V; ID= 500 mA;

V

GS

Figure 7 and 8

=25°C - 2.3 4 Ω

T

j

= 1.8 V; ID=75mA;

V

GS

Figure 7 and 8

=25°C - 3.1 8 Ω

T

j

100 380 - mS

Figure 11

- 1.0 - nC

=8V;Figure 14

V

GS

-1740pF

f = 1 MHz; Figure 12

- 4 10 ns

=10V; RG=50Ω;

V

GS

=50Ω

R

GS

9397 750 09629

Product data Rev. 02 — 26 April 2002 5 of 13

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.