Philips (Now NXP) BGU2003 Schematic [ru]
DISCRETE SEMICONDUCTORS
M3D124
DATA SH EET
BGU2003
SiGe MMIC amplifier
Preliminary specification 2002 May 17
Philips Semiconductors Preliminary specification
SiGe MMIC amplifier BGU2003
FEATURES
• Low current
• Very high power gain
• Low noise figure
• Integrated temperature compensated biasing
• Control pin for adjustment bias current
• Supply and RF output pin combined.
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Low noise amplifiers
• Satellite television tuners (SATV)
• High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low vol tage
applications in a plastic, 4-pin SOT343R package.
PINNING
PIN DESCRIPTION
1GND
2RF in
3 CTRL (bias current control)
4V
handbook, halfpage
21
Top view
Marking code: A6
+ RF out
S
43
MAM427
CTRL
BIAS
CIRCUIT
RFin GND
Fig.1 Simplified outline (SOT343R) and symbol.
VS+RFout
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
I
S
DC supply voltage RF input AC coupled − 4.5 V
DC supply current V
VS-OUT
= 2.5 V; I
CTRL
=1mA;
10 − mA
RF input AC coupled
MSG maximum stable gain V
T
NF noise figure V
= 2.5 V; f= 1800 MHz;
VS-OUT
=25°C
amb
= 2.5 V; f = 1800 MHz; ΓS= Γ
VS-OUT
18 − dB
1.1 − dB
opt
2002 May 17 2
Philips Semiconductors Preliminary specification
SiGe MMIC amplifier BGU2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
V
CTRL
I
S
I
CTRL
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
supply voltage RF input AC coupled − 4.5 V
voltage on control pin − 2V
supply current (DC) forced by DC voltage on RF input
or I
CTRL
− 30 mA
control current − 3mA
total power dissipation Ts≤ 100 °C − 135 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C
thermal resistance from junction to soldering point 350 K/W
CHARACTERISTICS
RF input AC coupled; T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
MSG maximum stable gain V
supply current V
VS-OUT
V
VS-OUT
VS-OUT
=2.5V; I
=2.5V; I
=2.5V; I
= 0.4 mA 2.5 4.5 6.5 mA
CTRL
=1.0mA 6 10 15 mA
CTRL
VS-OUT
=10mA;
− 23 − dB
f = 900 MHz
V
VS-OUT
=2.5V; I
VS-OUT
=10mA;
− 18 − dB
f = 1800 MHz
2
|
|s
21
insertion power gain V
VS-OUT
=2.5V; I
VS-OUT
=10mA;
18 19 − dB
f = 900 MHz
V
VS-OUT
=2.5V; I
VS-OUT
=10mA;
13 14 − dB
f = 1800 MHz
s
12
isolation V
VS-OUT
=2.5V; I
VS-OUT
=0;
− 26 − dB
f = 900 MHz
V
VS-OUT
=2.5V; I
VS-OUT
=0;
− 20 − dB
f = 1800 MHz
NF noise figure V
IP3
(out)
output intercept point;
S=ZL
50 Ω
Z
=2.5V; I
VS-OUT
f = 900 MHz; Γ
VS-OUT
=2.5V; I
V
f = 1800 MHz; Γ
V
VS-OUT
=2.3V; I
f = 900 MHz
VS-OUT
=2.3V; I
V
= Γ
S
S
VS-OUT
opt
VS-OUT
= Γ
opt
VS-OUT
VS-OUT
=10mA;
=10mA;
=10mA;
=10mA;
− 1.0 2 dB
− 1.1 2 dB
− 19 − dBm
− 21 − dBm
f = 1800 MHz
2002 May 17 3
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