Philips (Now NXP) BGA2712 Schematic [ru]

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

MBD128

BGA2712

MMIC wideband amplifier

Product specification
Supersedes data of 2002 Jan 31

2002 Sep 10

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2712

FEATURES

• Internally matched to 50 Ω

• Wide frequency range (3.2 GHz at 3 dB bandwidth)

• Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)

• 5 dBm saturated output power at 1 GHz

• Good linearity (11 dBm IP3

at 1 GHz)

(out)

• Unconditionally stable (K > 1.5).

APPLICATIONS

• LNB IF amplifiers

• Cable systems

• ISM

• General purpose.

DESCRIPTION

Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifierwith internal matching circuit in a 6-pin
SOT363 SMD plastic package.

PINNING

PIN DESCRIPTION

1V

S

2, 5 GND2

3 RF out
4 GND1
6RFin

4

56

63

132

Top view

Marking code: E2-.

MAM455

Fig.1 Simplified outline (SOT363) and symbol.

1

2, 54

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
I
s

S

S

2



21

DC supply voltage 5 6 V
DC supply current 12.3 − mA

insertion power gain f = 1 GHz 21.3 − dB
NF noise figure f = 1 GHz 3.9 − dB
P

L(sat)

saturated load power f = 1 GHz 4.8 − dBm

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

I

S

P

tot

T

stg

T

j

P

D

DC supply voltage RF input AC coupled − 6V

supply current − 35 mA

total power dissipation Ts≤ 90 °C − 200 mW

storage temperature −65 +150 °C

operating junction temperature − 150 °C

maximum drive power − 10 dBm

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2002 Sep 10 2

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2712

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

CHARACTERISTICS

=5V; IS= 12.3 mA; Tj=25°C; unless otherwise specified.

V

S

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

2

s



21

R

LIN

R

L OUT

2

s



12

NF noise figure f = 1 GHz − 3.9 4.3 dB

BW bandwidth at s
K stability factor f = 1 GHz 1.5 2 −−

P

L(sat)

P

L1dB

IP3

(in)

IP3

(out)

thermal resistance from junction to

P

= 200 mW; Ts≤ 90 °C 300 K/W

tot

solder point

supply current 9 12.3 15 mA

insertion power gain f = 100 MHz 20 20.8 22 dB

f = 1 GHz 20 21.3 22 dB
f = 1.8 GHz 20 22 23 dB
f = 2.2 GHz 20 22 23 dB
f = 2.6 GHz 19 21.2 22 dB
f = 3 GHz 16 19.3 21 dB

return losses input f = 1 GHz 12 14 − dB

f = 2.2 GHz 8 10 − dB

return losses output f = 1 GHz 17 20 − dB

f = 2.2 GHz 15 18 − dB

isolation f = 1.6 GHz 31 33 − dB

f = 2.2 GHz 36 39 − dB

f = 2.2 GHz − 4.3 4.7 dB

2−3 dB below flat gain at 1 GHz 2.8 3.2 − GHz

21

f = 2.2 GHz 2.5 3 −−

saturated load power f = 1 GHz 3 4.8 − dBm

f = 2.2 GHz 0 1.3 − dBm

load power at 1 dB gain compression; f = 1 GHz −2 0.2 − dBm

at 1 dB gain compression; f = 2.2 GHz −4 −2 − dBm

input intercept point f = 1 GHz −12 −10 − dBm

f = 2.2 GHz −14 −16 − dBm

output intercept point f = 1 GHz 9 11 − dBm

f = 2.2 GHz 4 6 − dBm

2002 Sep 10 3

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2712

APPLICATION INFORMATION

Figure 2 shows a typical application circuit for the
BGA2712MMIC.Thedeviceisinternallymatchedto50 Ω,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2
and C3 should not be more than 100 pF for applications
above 100 MHz. However, when the device is operated
below 100 MHz, the capacitor value should be increased.

handbook, halfpage

DC-block

100 pF

input output

DC-block

100 pF

DC-block

100 pF

MGU437

The 22 nF supply decoupling capacitor C1 should be
located as closely as possible to the MMIC.

Separate paths must be used for the ground planes of the
groundpinsGND1andGND2,andthesepathsmustbeas
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.

V

handbook, halfpage

s

C1

V

s

RF input

C2 C3

RF outRF in

GND2GND1

RF output

MGU435

Fig.2 Typical application circuit.

Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.

Fig.3 Easy cascading application circuit.

handbook, halfpage

from RF

circuit

handbook, halfpage

antenna

mixer

wideband

amplifier

oscillator

to IF circuit
or demodulator

Fig.4 Application as IF amplifier.

LNA

mixer

wideband

amplifier

oscillator

to IF circuit
or demodulator

Fig.5 Application as RF amplifier.

MGU438

MGU439

The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).

As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).

InFig.6theMMICisused as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.

2002 Sep 10 4

handbook, halfpage

from modulation

or IF circuit

Fig.6 Application as driver amplifier.

oscillator

mixer

wideband

amplifier

to power
amplifier

MGU440